GFET model Summary

Fig1: Varying separation of parallel plate Top plate SiC Bottom plate Figure 1: Parallel plate capacitor

Fig2: Varying thickness of SiC of GFET Graphene SiC Back gold Figure 2: GFET with different SiC thickness

Fig3: Varying thickness of back gold thickness Graphene SiC Back gold Gold (50 um)+ SiC (350um) Graphene SiC Figure 3 Back gold Gold (350 um)+ SiC (50um)

Fig4: Varying extra gold position along Z direction Graphene SiC Back gold SiC Extra gold SiC Z =100 um Figure 4 Z =1 um Extra gold SiC Note : without extra gold E = 1.87E6

Fig5: Varying extra gold position along X direction Graphene Graphene Extra gold Extra gold SiC Back gold X = 400 um X = 0 um Figure 5

Fig6: Varying the conductivity of extra SiC Here, I replace extra gold to SiC and change the conductivity of SiC and recorded E-field. I change extra gold to SiC because our device actually SiC and it conductivity changes (we believe ) with light Graphene Extra SiC SiC Back gold

Fig7: Effect of Au thickness E-field for 399.99 um Au ( here 0.1 or 0.01 um SiC) (a) (b) E-field for 400 um Au (fully gold, no SiC) Fig.(b): E vs SiC thickness. In this plot 0.008 means actually 0 um Au. I put 0.008 stead of 0 um, otherwise I cannot plot in ln scale Fig.(a): E vs Au thickness Total thickness of SiC +Au in the GFET is 400 um. Not extra gold in this case. Just simple Au/SiC/graphene. It is found that E-field increases with increasing (decreasing) the thickness of Au (SiC). When Au is 399.9 or 399.009 um ( here SiC = 10 or 10 nm between gold and graphene), E-field is increases by two order magnitudes. When Au is 400 um (SiC =0um, that mean fully gold), the electric field sharply decreases by two order magnitude.

Fig8: E-field as function of Laser power Here, SiC conductivity is calculated for different laser power and the SiC conductivity is used as the input in the simulation.

P = 1 uW, E = 1.56E6 P = 200 uW, E = 6.58E6 P = 1000 uW, E = 19.91E6 P = 10000 uW, E = 96.81E6