Objective: Demonstrate BTBT capability Approach:

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Presentation transcript:

Band-To-Band-Tunneling in InAs Devices Momentum-Energy-Resolved Transport in Full-Band Simulations Objective: Demonstrate BTBT capability Approach: UTB - InAs PIN diode quantization automatically included Compute energy and momentum transmission coefficient Result: Conduction band moves rapidly => determines k-cutoff. Complicated hole dispersion creates Fano-resonance like features in T. Impact: Demonstrate explicit E-k-dependence

Band-To-Band-Tunneling in InAs Devices Charge Self-consistent Full-Band Transport in Realistic Structure Bandgap raised from bulk 0.37=>0.6eV Doping 1x1018/cm3 Objective: Demonstrate BTBT capability Approach: Full I-V calculation in OMEN Impact: First full band / atomistic charge-self-consistent BTBT simulation Full ambipolar carrier treatment

Band-To-Band-Tunneling in InAs Devices Charge Self-consistent Full-Band Transport in Realistic Structure Bandgap raised from bulk 0.37=>0.6eV Doping 1x1018/cm3 Objective: Demonstrate BTBT capability Approach: Full I-V calculation in OMEN Impact: First full band / atomistic charge-self-consistent BTBT simulation Full ambipolar carrier treatment

Band-To-Band-Tunneling in InAs Devices Charge Self-consistent Full-Band Transport in Realistic Structure Bandgap raised from bulk 0.37=>0.6eV Doping 1x1018/cm3 Objective: Demonstrate BTBT capability Approach: Full I-V calculation in OMEN Impact: First full band / atomistic charge-self-consistent BTBT simulation Full ambipolar carrier treatment

Gate Control and Sub-Threshold Swing in BTBT Comparison of pin InAs pin Devices – SG-UTB / DG-UTB / NW Objective: Low voltage, good turn-on/off switches Develop low sub-threshold swing FETs with band-to-band-tunneling (BTBT) Provide guidance to experiments Approach: Utilized OMEN – atomistic, full band quantum transport simulator 3 diff. geom., InAs, 20nm gates. 6nm body/diameter, 1nm Oxide, 5e19/cm3 Result – 3 different devices have: dramatically different sub-thresholds Slightly different gate controls Impact: BTBTdevices much more sensitive to smooth band bending than expected gate all-around NW fairs best. Authors: M. Luisier, Gerhard Klimeck

20nm gates. 6nm body/diameter, 1nm Oxide, 5e19/cm3