HV-CMOS Update The properties device (HVStripV1) we just Birmingham

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Presentation transcript:

HV-CMOS Update The properties device (HVStripV1) we just irradiated @ Birmingham B. Todd Huffman 23/06/2015

MB03 – Response to Fe55 g’s Channel 2, Row 1 Biased @ -80 volts!!

MB03 – Response to Fe55 g’s Biased @ -40 volts Biased @ -80 volts!! Channel 16, Row 0 Biased @ -40 volts Biased @ -80 volts!! MB01 MB03 MB03 – Response to Fe55 g’s Unfortunately; Appears MB03 is a less performant device.

MB01 – Pulse Inj. (from Luigi V. earlier) Bias-dependent gain MB01 – Pulse Inj. (from Luigi V. earlier)

Bias-dependent gain MB03 – Pulse Inj. (Luigi V.)

Relative efficiency vs. Bias MB03 – Fe55 (Luigi V.)

(Inj. – Fe55)/Inj. Bias = -80 volts Histogram of all channels comparing difference between gain found using Fe55 or just injecting charge into the input capacitor. A measure of the input capacitor. (Inj. – Fe55)/Inj.

Status and Plans MB03 part of successful proton beam run last week 27 MeV Protons at B’ham Currently in dry freezer (2 weeks) Many more test chips arrive soon! AMS CHESS-1 Chips in hand but small numbers, some irradiated TJ CHESS-1 Two flavors; several different wafer resistivities Daughter boards on order – Mother board design nearly complete Basic chips – Sensor+Amp Faster amp Several different sensor sizes Architectural device - final design review July 1 Full digital processing, 128 ch., 2 cm long 50 mm wide Status and Plans

Futher quick Slides Just More slides

Relative efficiency vs. Bias MB03 – Fe55 (Luigi V.)

Relative efficiency vs. Bias MB03 – Fe55 (Luigi V.)

Relative efficiency vs. Bias MB03 – Fe55 (Luigi V.)