Fab. Example: Piezoelectric Force Sensor (1)

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Presentation transcript:

Fab. Example: Piezoelectric Force Sensor (1) aluminum doped conductor, B++ silicon SiO2 doped piezoresistor, B+ aluminum piezoresistor silicon conductor 7 mask process

Fab. Example: Piezoelectric Force Sensor (2) Processing: alignment Pattern resist and light Si etch (3000 angstroms) to define alignment patterns [Steps 1-3]

Fab. Example: Piezoelectric Force Sensor (3) Processing: protective oxide Strip resist Grow protective screeening oxide ~250 angstroms [Steps 4-5]

Fab. Example: Piezoelectric Force Sensor (4) Processing: piezoresistors Pattern resist 50 keV boron implant for piezoresistors, dose = 1016 ions/cm2 [Steps 6-7, resist strip not shown]

Fab. Example: Piezoelectric Force Sensor (5) Processing: conductors Pattern resist 50 keV boron implant for piezoresistors, dose varies from wafer to wafer [Steps 9-10, resist strip not shown]

Fab. Example: Piezoelectric Force Sensor (6) Processing: oxide/anneal Strip damaged oxide [Step 12] Wet Oxidation 900C, ~2500A, 2 m depth, [Steps 13-15]

Fab. Example: Piezoelectric Force Sensor (7) Processing: contacts Open oxide [Steps 16-17] Strip Resist [Step 18] Sputter 0.5 m Aluminum [Steps 19-20] Pattern and etch Al [Steps 21-24]

Fab. Example: Piezoelectric Force Sensor (8) Processing: DRIE Frontside Etch- 1.6 m resist [Step 25] , open oxide [Step 26], etch Si to buried oxide [Step 27], strip resist [Steps 28-29], 1.6 m resist frontside protect [Step 30] Backside Etch-, 10m resist [Step 31], etch Si to buried oxide [Step 32], wet etch oxide [Step 33] [Steps 34-36 not shown]

Fab. Example: Piezoelectric Force Sensor (9) Processing: final device