Lecture 15 RTD, Quantum Dots, Hot Electron Structures
Lateral Design Vertical Design
Quantum Dot : 0 D
Condition: U=q2/2C >> kT C is very very small…..structure is very very small T is very very small….. 4K…300mK…50mK Relationship with 0 D
Title: Shell filling and spin effects in a few electron quantum dot Author(s): Tarucha S, Austing DG, Honda T, vanderHage RJ, Kouwenhoven LP Source: PHYSICAL REVIEW LETTERS 77 (17): 3613-3616 OCT 21 1996 Document Type: Article Language: English Cited References: 15 Times Cited: 701
Vertical Quantum Dots Artificial Atoms
Coulomb Blockade-----Diamond Features
Hot Electron Structures: Electron in emitter is several kT higher than in collector (source) (drain) (2) Strong electrical field (oxide damage; reliability issue in Si MOSFET)
Ballistic Injection Structures:
Ballistic Transport in HBT Homework: Read and study “Modern Semiconductor Device Physics” pp.284--298