Lecture 15 RTD, Quantum Dots, Hot Electron Structures

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Presentation transcript:

Lecture 15 RTD, Quantum Dots, Hot Electron Structures

Lateral Design Vertical Design

Quantum Dot : 0 D

Condition: U=q2/2C >> kT C is very very small…..structure is very very small T is very very small….. 4K…300mK…50mK Relationship with 0 D

Title: Shell filling and spin effects in a few electron quantum dot Author(s): Tarucha S, Austing DG, Honda T, vanderHage RJ, Kouwenhoven LP Source: PHYSICAL REVIEW LETTERS 77 (17): 3613-3616 OCT 21 1996 Document Type: Article Language: English Cited References: 15 Times Cited: 701

Vertical Quantum Dots Artificial Atoms

Coulomb Blockade-----Diamond Features

Hot Electron Structures: Electron in emitter is several kT higher than in collector (source) (drain) (2) Strong electrical field (oxide damage; reliability issue in Si MOSFET)

Ballistic Injection Structures:

Ballistic Transport in HBT Homework: Read and study “Modern Semiconductor Device Physics” pp.284--298