AMS-Chess1 Characterization

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Presentation transcript:

AMS-Chess1 Characterization K. Kanisauskas, T. Binnie, C. Buttar, J. Dopke, T. Huffman, J. John, D. Maneuski, R. Plackett, L. Vigani, Q. Xiu ATLAS Strip CMOS Regular Meeting March 29, 2016

AMS-Chess1 Edge-TCT measurements performed for irradiated and non-irradiated samples Laser scans done at different bias voltages APA8 structure investigated 45×800μm2 size pixels Same DAC settings used for both samples: VPLoad: 2100 Casc: 2600 iNSF: 570 iN: 1000 iNBias: 340 iPFB: 2475

Laser Setup 1060nm laser was used Test chip is cooled down using peltier Temperature monitored close to AMS-Chess1 chip during measurements Measurements for non-irradiated and irradiated samples done at the same temperature (≈ -8℃) Constant dry air supply available (dew point ≈ -11℃)

Edge-TCT (1) Output Signal Maps Non-Irradiated Irradiated Surface Data was taken for CH38 and CH41 (correspond to APA8 pixels) between -45 and 0 bias voltages In this case positive signal observed from pixels For irradiated device the signal completely disappears below -50V bias Rise-times of the signal were dismissed due to jitter

Edge-TCT (2) Non-Irradiated Irradiated Surface Different X-axis range

Edge-TCT (3) Signal cut was done for CH38 at the center of the pixel Plots produced of relative signal vs x-coordinate Depletion regions compared between irradiated and non-irradiated samples at different bias voltages

Edge-TCT (4)

Summary Increase in depletion region observed for irradiated device Different behavior of amplitude vs bias voltage seen between non-irradiated and irradiated samples Unknown reason for signal disappearance below -50V