Memory Units Memories store data in units from one to eight bits. The most common unit is the byte, which by definition is 8 bits. Computer memories are.

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Presentation transcript:

Memory Units Memories store data in units from one to eight bits. The most common unit is the byte, which by definition is 8 bits. Computer memories are organized into multiples of bytes called words. Generally, a word is defined as the number of bits handled as one entity by a computer. By this definition, a word is equal to the internal register size (usually 16, 32, or 64 bits). For historical reasons, assembly language defines a word as exactly two bytes. In assembly language, a 32 bit entity is called a double-word and 64 bits is defined as a quad-word.

Memory Units The location of a unit of data in a memory is called the address. In PCs, a byte is the smallest unit of data that can be accessed. In a 2-dimensional array, a byte is accessed by supplying a row number. For example the blue byte is located in row 7.

Question Answers Memory Addressing A 3-dimensional array is arranged as rows and columns. Each byte has a unique row and column address. Question How many bytes are shown? What is the location of the blue byte? Answers a) 64 B b) Row 2, column 8 This example is (of course) only for illustration. Typical computer memories have 256 MB or more of capacity.

Memory Addressing In order to read or write to a specific memory location, a binary code is placed on the address bus. Internal decoders decode the address to determine the specific location. Data is then moved to or from the data bus. The address bus is a group of conductors with a common function. Its size determines the number of locations that can be accessed. A 32 bit address bus can access 232 locations, which is approximately 4G.

Memory Addressing In addition to the address bus and data bus, semiconductor memories have read and write control signals and chip select signals. Depending on the type of memory, other signals may be required. Read Enable (RE) and Write Enable (WE) signals are sent from the CPU to memory to control data transfer to or from memory. Chip Select (CS) or Chip Enable (CE) is used as part of address decoding. All other inputs are ignored if the Chip Select is not active. Output Enable (OE) is active during a read operation, otherwise it is inactive. It connects the memory to the data bus.

Read and Write Operations The two main memory operations are called read and write. A simplified write operation is shown in which new data overwrites the original data. Data moves to the memory. Address register Data register Address decoder Byte organized memory array Address bus The address is placed on the address bus. Data is placed on the data bus. A write command is issued. Data bus Write

Read and Write Operations The read operation is actually a “copy” operation, as the original data is not changed. The data bus is a “two-way” path; data moves from the memory during a read operation. Address register Data register Address decoder Byte organized memory array Address bus The address is placed on the address bus. A read command is issued. A copy of the data is placed in the data bus and shifted into the data register. Data bus Read

Random Access Memory RAM is for temporary data storage. It is read/write memory and can store data only when power is applied, hence it is volatile. Two categories are static RAM (SRAM) and dynamic RAM (DRAM). Bits stored in a semiconductor latch or flip-flop Bits stored as charge on a capacitor

Static RAM SRAM uses semiconductor latch memory cells. The cells are organized into an array of rows and columns. SRAM is faster than DRAM but is more complex, takes up more space, and is more expensive. SRAMs are available in many configurations – a typical large SRAM is organized as 512 k X 8 bits.

Asynchronous Static RAM The basic organization of an asynchronous SRAM is shown. Read cycle sequence: A valid address is put on the address bus Chip select is LOW Output enable is LOW Data is placed on the data bus Memory array Address lines Row decoder 256 rows x 128 columns x 8 bits Eight input buffers Write cycle sequence: A valid address is put on the address bus Chip select is LOW Write enable is LOW Data is placed on the data bus Output data I/O0 Input data control Column I/O Column decoder I/O7 Address lines CS WE OE

Dynamic RAMs (DRAMs) store data bits as a charge on a capacitor. Dynamic RAM (DRAM) Dynamic RAMs (DRAMs) store data bits as a charge on a capacitor. DRAMs are simple and cost effective, but require refresh circuitry to prevent losing data. The address lines are multiplexed to reduce the number of address lines. Multiplexed address lines: Addresses RAS CAS Row address is latched when RAS is LOW Column address is latched when CAS is LOW

Dynamic RAM (DRAM) A feature with some DRAMs is fast page mode. Fast page mode allows successive read or write operations from a series of columns address that are all on the same row. RAS CAS R/W Addresses DOUT Other types of DRAMs have been developed to speed access and make the processor more efficient. These include EDO DRAMs, BEDO DRAMs and SDRAMs, as described in the text.

Read-Only Memory (ROM) The ROM family is all considered non-volatile, because it retains data with power removed. It includes various members that can be either permanent memory or erasable. ROMs are used to store data that is never (or rarely) changed such as system initialization files. ROMs are non-volatile, meaning they retain the data when power is removed, although some ROMs can be reprogrammed using specialized equipment.

Read-Only Memory (ROM) A ROM symbol is shown with typical inputs and outputs. The triangles on the outputs indicate it is a tri-stated device. To read a value from the ROM, an address is placed on the address bus, the chip is enabled, and a short time later (called the access time), data appears on the data bus. Address input lines Data output lines A0 A1 A2 O0 Address transition A3 Address input lines O1 Valid address on input lines A4 O2 A5 ta O3 A6 Data outputs A7 Valid data on output lines Data output transition E0 E1 Chip select

PROMs, EPROMs and EEPROMs PROMs are programmable ROM, in which a fused link is burned open during the programming process. Once the PROM is programmed, it cannot be reversed. An EPROM is an erasable PROM and can be erased by exposure to UV light through a window. To program it, a high voltage is applied to VPP and OE is brought LOW. VPP A0 A1 O0 A2 O1 A3 O2 A4 O3 A5 O4 A6 O5 A7 O6 A8 O7 A9 A10 Another type of erasable PROM is the EEPROM, which can be erased and programmed with electrical pulses. CE/PGM OE

The Basic Computer

The Basic Computer Central processing unit (CPU) Memories and storage Input/output ports Buses

The Computer System Central processing unit (CPU) Memories and storage Input/output ports Buses

The Computer System

Microprocessors

Microprocessors Arithmetic logic unit (ALU) Instruction decoder (normally part of the ALU) Register array Control Unit

Microprocessors Basic Operations Perform arithmetic and logic operations Move data between memory locations and input/output ports Make decisions and act accordingly

Microprocessors Programming Operations Data transfer Arithmetic and logic Bit manipulation Loops and jumps Strings Subroutines and interrupts Control