Aa©cwievnx (Semiconductor)t ‡‡h mKj c`v‡_©i cwievnxZv AšÍiK Gi †P‡q †ekx wKš‘ cwievnxi †P‡q Kg Zv‡`i Aa© cwievnx e‡j| mvavibZ ch©vq mviYxi PZz_© ‡kªYxi †gŠj †hgb wmwjKb, Rv‡g©wbqvg cÖf„wZ c`v_© Aa© cwievnxi b¨vq AvPiY K‡i|

Aa©cwievnxi ‰ewkó : (i) Aa©cwievnxi †hvRb e¨vÛ c~b© _v‡K I cwienb e¨vÛ Lvwj _v‡K| (ii) Gi †ivaKZ¡ 10-4 Ωm µ‡gi| (iii) †hvRb e¨vÛ I cwienb e¨v‡Ûi g‡a¨ kw³i e¨eavb Lze Kg _v‡K| (iv) ZvcgvÎv e„wׇZ cwienb e¨v‡Û B‡jKUªb msL¨v e„w× cvq Ges Aa©cwievnxi Zwor cwievnxZv e„w× cvq| (v) Dchy³ Ac`ªe¨ wgkª‡b Zwor cwienb a‡g©i D‡jøL‡hvM¨ cwieZ©b N‡U|

e¨vÛ Z‡Ë¡i Av‡jv‡K AšÍiK, cwievnx I Aa©cixevnx c`v‡_©i AvPiY e¨vL¨vt AšÍiK t

mycwievnxt

Aa©cwievnxt

weï× ev mnRvZ Aa©cwievnx (Pure or intrinsic semiconductor)t ‡h me Aa©cwievnx‡Z †Kvb Ac`ªe¨ _v‡Kbv Zv‡`i weï× ev mnRvZ Aa©cwievnx e‡j| wmwjKb (Si), Rv‡g©wbqvg(Ge), wUb(Sn) cÖf„wZ weï× ev mnRvZ Aa©cwievnx|

`ywlZ ev ewn©RvZ Aa©cwievnx (Impure or extrinsic semiconductor) t weï× Aa©cwievnx‡Z we‡kl ai‡bi Ac`ªe¨ AwZ Aí cwigv‡b wgwk‡q †nvj ev gy³ B‡jKUª‡bi msL¨v evov‡bv hvq| G ai‡bi Ac`ªe¨ wgwkªZ Aa©cwievnx‡K `ywlZ ev ewn©RvZ Aa©cwievnx e‡j| Ac`ª‡e¨i cÖK„wZi Dci wfwË K‡i ewnR©vZ Aa©cwievnx‡K `yÕfv‡M fvM Kiv hvq| h_v t (i) p-UvBc Aa©cwievnx (ii) n-UvBc Aa©cwievnx|

p-UvBc Aa©cwievnx (p - type semiconductor )t

n-UvBc Aa©cwievnx (n – type semiconductor ) t

m¤§yL evqvm (Forword Bias) t

cðvrgyLx evqvm (Reverse Bias)t

p-n Rvskvb ev Aa©cwievnx Wv‡qvW Øviv GKgyLxKiYt Aa©Zi½ GKgyLxKiY (Half-wave rectification)t

c~Y©Zi½ GKgyLx KiY (Full-wave rectification) t

UªvbwR÷i I Gi cÖKvi ‡f`t

A¨v¤úwjdvqvi wn‡m‡e n-p-n UªvbwR÷v‡ii Kvh©cÖYvjx e¨vL¨vt