Building the SemiConductor Tracker of the ATLAS Detector

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Presentation transcript:

Building the SemiConductor Tracker of the ATLAS Detector The SCT Project Building the SemiConductor Tracker of the ATLAS Detector Marko Mikuž University of Ljubljana & Jožef Stefan Institute 8th HSTD, Taipei December 5, 2011 Special session in honour of Professor Takashi Ohsugi

Two HEP Milestones of 1993 On October 21, 1993, following a turbulent summer, US Congress definitely cancels the Superconducting Super Collider project. On May 22-24 1993 the 1st International Symposium on the Development and Application of Semiconductor Tracking Detectors is held in Hiroshima. Taipei, December 5, 2011 Marko Mikuž: SCT

3 selected papers of 1st HSTD Although aimed at SDC at SSC they prove to be of high relevance to the SCT project Taipei, December 5, 2011 Marko Mikuž: SCT

1992 –ATLAS LoI Proto - SCT in ATLAS LoI (SIT) 2/3 layers of silicon strips in barrel only LoI Taipei, December 5, 2011 Marko Mikuž: SCT

ATLAS TP - 1994 Silicon tracker appearing in the relevant part of the barrel – three layers of pixels, four of strips “SCT” comprises all ID except the TRT Pixels, Strips, MSGC, GaAs Japanese groups working on SSC strengthen ATLAS TP Taipei, December 5, 2011 Marko Mikuž: SCT

Up to 1997 – ID TDR Finalized design of the SCT Spawned off pixels as independent (sub)detector Abolished MSGC and GaAs All silicon strip tracker – 4088 modules 2112 barrel modules in four layers 1976 end-cap modules on 2x9 disks 2x2 back-to-back sensors per module at 40 mrad stereo provide space-points 8448 barrel & 6944 strip sensors > 60 m2 of silicon Hermetic design 4 space-points on track for η<2.5 Taipei, December 5, 2011 Marko Mikuž: SCT

SCT requirements Find tracks Each ATLAS ID subsystem exhibits some stand-alone track finding capability 3 pixel layers 4 SCT stereo (40mrad) layers Strip occupancy < 1% 36 TRT straw tube layers layers Measure tracks Strip pitch (80mm) measures the angle to 1mrad and provides sign of < 0.5 TeV particles. Minimize 2-track hits. Use strip length of 12.8 cm Minimize material ~10% X0 at η=0 Radiation tolerance 2x1014 n/cm2 in 3+7 LHC years (730 fb-1) Execute project within resources available ~45 MCHF CORE cost, ¬15.5 MCHF in sensors Joint effort of the 40 institutes ~10 years to beam Taipei, December 5, 2011 Marko Mikuž: SCT

Frustrations of a big project Funding agencies Schedule technology leaps e.g. 4”-> 6” (R&D, time) performance Requirements resources Taipei, December 5, 2011 Marko Mikuž: SCT

SCT Sensors SCT Most sensitive and expensive ingredient of SCT 1/3 of the total cost Ultimate challenge – radiation hardness Benchmark NIEL 2x1014 neq/cm2, TID ~20 MRad Lots of R&D for a decade High operational voltage required FDV > 300 V for 300 µm High fields help in fast charge collection High voltage and irradiation Large currents in detector NIEL-induced bulk currents Surface currents due to high fields, modified also by TID Micro-discharges leading to sensor beak-down NIEL per 100 fb-1 SCT ~60 V Ohsugi et al. 1st HSTD Taipei, December 5, 2011 Marko Mikuž: SCT

SCT Sensor Choice SSSD with n+ strips on n type bulk the sensor of choice in TDR DSSD considered too high risk for HV on readout n+n allows under-depleted operation Elaborate R&D on n+ strip insulation with notable contributions of Prof. Oshugi HV specification 300 V The limit of a class of electronics components Decision overruled the following year Resources insufficient to fund n+n Requires double sided processing Revert to p+n Cost effective, but requires V > FDV Voltage spec changed to 350 V, With services designed to 500 V Soon spec risen to 500 V TDR n+n 300 V Taipei, December 5, 2011 Marko Mikuž: SCT

SCT Sensor Procurement Contact with suppliers from 1995 Several iterations of prototypes Specifications in 2000 Very strict, aimed at ultimate quality 1 barrel type (square ~64x64 mm2), 5 wedge types for end-cap Order split between Hamamatsu / CiS by 92.2/7.8 % Delivery 2001-2003, small part 2004 Perfect sensors delivered by Hamamatsu Smooth I-V up to 500 V, before and after irradiation No micro-discharges due to field plate, equivalent to the extended electrode concept pioneered by Prof. Ohsugi I-V non-irradiated Hamamatsu barrel NIM A578(2007)98 500 V Taipei, December 5, 2011 Marko Mikuž: SCT

From sensors to SCT - Modules Perfect sensors don’t make a perfect detector (yet) Module production organized in clusters 4 barrel Japan Nordic UK-B US 7 end-cap Very strict mechanical tolerances required and achieved in module production Aimed at providing best possible track alignment seeds for fast physics turn-on Taipei, December 5, 2011 Marko Mikuž: SCT

From sensors to SCT - Integration Integration of sensors on structures with services Barrel Modules on barrels: Oxford 4 barrels: CERN End-caps Liverpool NIKHEF SCT in TRT: CERN SCT & TRT in ATLAS pit inside solenoid Connect services Commission Taipei, December 5, 2011 Marko Mikuž: SCT

SCT Operational Performance >99 % of all channels operational Availability 99.9 % We can all be proud of having built such a perfect tracking detector ! Taipei, December 5, 2011 Marko Mikuž: SCT

SCT performance with LHC collisions > 1000 reconstructed tracks More on SCT operation and performance Talk by Dave Robinson Wednesday 9:30 Taipei, December 5, 2011 Marko Mikuž: SCT

Ohsugi-san, let me conclude by: thanking you for sharing your knowledge and experience, helping us to build one of the best silicon tracking devices ever, wishing you many happy and fruitful years fulfilling also all your interests you lacked time for during your exceptional career. Taipei, December 5, 2011 Marko Mikuž: SCT