指導教授:林志明 學生:黃政德 系級:積體所研一 IEICE TRANS. ELECTRON., VOL.E88–C, NO.4 APRIL 2005 A Temperature and Supply Independent Bias Circuit and MMIC Power Amplifier Implementation for W-CDMA Applications Youn Sub NOH, Jong Heung PARK, and Chul Soon PARK, Nonmembers 指導教授:林志明 學生:黃政德 系級:積體所研一

Introduction It shows about 125% quiescent current variation over -30˚C to 90˚C. [1] four Schottky diodes [2] feedback bias [3、4] Automatic Bias Variation (ABV)

Proposed temperature and supply independent bias circuit

functions

Simulated base voltage of the HBT2

Photograph of power amplifier

Measured quiescent current of the power amplifier

Vreg dependence of power gain, PAE and ACLR

Temperature dependence of power gain, PAE and ACLR

Conclusion A new temperature and supply independent bias circuit. The quiescent current variation of only 6% for the−30◦C to 90◦C temperature change. 8.5% for the 2.9V to 3.1V supply voltage change.

References [1] K.Murayama, M. Nishijima, M. Yanagihara, and T. Tanaka, “Temperature compensation technique of InGaP/GaAs power HBT with novel bias circuit using Schottky diodes,” IEICE Trans. Electron., vol.E84-C, no.10, pp.1379–1382, Oct. 2001. [2] E. J¨arvinen, “Radio frequency amplifiers,” US Patent 6,052,032, April 2000. [3] E. J¨arvinen, S. Kalajo, and M. Matilainen, “Bias circuit for GaAs HBT power amplifier,” IEEE MTT-S. Int. Microwave Symp. Dig., pp.507–510, 2001. [4] T. Sato, S. Yuyama, A. Nakajima, H. Ono, A. Iwai, E. Hase, and C.Kusano, “Intelligent RF power module using automatic bias control (ABC) system for PCS CDMA applications,” IEEE MTT-S. Int. Microwave Symp. Dig., pp.201–204, June 1998.