Electrically active defects in 4H-SiC Ivana Capan Ruđer Bošković Institute Zagreb, Croatia http://www.irb.hr/users/capan

Electrically active defects in 4H-SiC Outline Introduction {Radiation induced damage – Deep level transient spectroscopy} Recent study {Double negatively charged carbon vacancy in 4H-SiC} Conclusions 20/11/2017 Electrically active defects in 4H-SiC

Electrically active defects in 4H-SiC Defects – electrically active VO VV VP Ec Ev 0.17 0.23 0.42 0.45 300 C 220 C 150 C n-type Si 20/11/2017 Electrically active defects in 4H-SiC

Electrically active defects in 4H-SiC 20/11/2017 Electrically active defects in 4H-SiC

Electrically active defects in 4H-SiC Laplace DLTS DLTS Laplace DLTS @ 170K 20/11/2017 Electrically active defects in 4H-SiC

Electrically active defects in 4H-SiC Z1/2 is carbon vacancy (Vc) – the major “lifetime killer” in SiC T=292K (=/-) (=/-) DLTS Laplace DLTS 20/11/2017 Electrically active defects in 4H-SiC

Electrically active defects in 4H-SiC Negative-U T=220K Z2 (-/0) Z1 (-/0) Z1 Z2 Z1 E (eV)  (cm2) (-/0) 0.52 2E-14 (=/-) 0.58 3E-15 Ec Z2 E (eV)  (cm2) (-/0) 0.42 6E-16 (=/-) 0.67 5E-15 Ev 20/11/2017 Electrically active defects in 4H-SiC

Electrically active defects in 4H-SiC Fast neutron irradiation, 1e13 cm-2 600 keV H, 5e9 cm-2 Low-temperature annealing; 700K 20/11/2017 Electrically active defects in 4H-SiC

Electrically active defects in 4H-SiC E-SiCure project team University of Aveiro Portugal Ruđer Bošković Institute Croatia Jozef Stefan Institute Slovenia National Institutes for Quantum and Radiological Science and Technology , Japan Australian Nuclear Science and Technology Organisation, Australia 20/11/2017 Electrically active defects in 4H-SiC