Basics of Power Semiconductor Devices RC1237   Raj Kiran B Mantosh Kumar V Siva Brahmaiah Rama

Classification of Power Semiconductor Devices

Power Diode Fig. Power Diode A power diode is an uncontrolled bipolar semiconductor device. It has a junction formed between a heavily doped P+ and a lightly doped N- layer which is epitaxially grown on a heavily doped N+ layer. These are of three types general purpose, high speed or fast recovery diode and Schottky diode. Fig. Power Diode

Thyristor The thyristor is a unidirectional, three-terminal device labelled: Anode, Cathode and Gate. Gate signal is required to turn it ON. Once the thyristor is ON and is passing current in the forward direction , the gate signal looses all control. Fig. Thyristor

Power MOSFET A power MOSFET is unipolar, voltage controlled device specifically designed to handle high power levels. It has three terminals called drain(D), source(S) and gate(G). Input impedance of power MOSFET is very high. Fig. Power MOSFET

Insulated Gate Bipolar Transistor(IGBT) IGBT combines qualities of both BJT and MOSFET making it ideal as a semiconductor switching device. It is free from secondary breakdown. It is mainly used in applications such as inverters, converters and power supplies. Fig.IGBT