Seung Jae Yu, Jae Hyun Ryu, Geun Woo Baek,

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Presentation transcript:

Channel Shape Effects on Device Instability of Amorphous Indium-Gallium-Zinc-Oxide FETs Seung Jae Yu, Jae Hyun Ryu, Geun Woo Baek, Jong Hun Hong and Sung Hun Jin* Department of Electronic Engineering, Incheon National University

I II III IV Outlines Introduction (Motivation) Experimental details Asymmetry Effects on S/D Electrodes Vertical Field Effects on Reliability Lateral Field Effects on Reliability III Results and discussion IV Summary

a-IGZO TFTs: Advantages vs. Constraints Advantage of IGZO TFTs Key Limitation Device Reliabilities Issues Bias temperature stress Light induced degradation Local field effects Channel shape (Cgs) VGS(V) IDS(mA) Reliability issues for a-IGZO TFTs are not fully resolved yet.

For Stable Applications, Hojin Lee, et al, J.J.APL, 50 (2011) 074203 TFT parasitic capacitance  Kick-back voltage U-type is popular due to the low Cgs of TFTs with the same W/L Importance of channel shape  Localized field, Cgs (kick back voltage)

For stable Applications, Importance of channel shape Localized field induced degradation Few study has been reported, but still important.

ZIGZAG Circular U-type Comparative Study Depending on Channel Shape Gate ZIGZAG Drain Source Gate Circular Drain Source Drain Source Gate U-type Bottom gate structure Same channel width and length  W/L=100/4 m

Device Geometry for a-IGZO TFTs glass IGZO SiNx/SiOx SiOx Gate SiNx/SiOx=400 nm/50 nm Inverted staggered bottom gate structures

I II III IV Outlines Introduction (Motivation) Experimental details Asymmetry Effects on S/D Electrodes Vertical Field Effects on Reliability Lateral Field Effects on Reliability III Results and discussion IV Summary

Experimental results (Original, S/D Change) Possible reasons for observed behaviors: S/D asymmetry effects are negligibly observed. Transfer length(LT) is large enough compared with the width of gate electrodes. Full gate structures for a-IGZO TFTs Hojin Lee, et al, J.J.APL, 50 (2011) 074203

Experimental results (Original, S/D Change) Possible reasons for observed behaviors: S/D asymmetry effects are negligibly observed. Transfer length(LT) is large enough compared with the width of gate electrodes. Full gate structures for a-IGZO TFTs Hojin Lee, et al, J.J.APL, 50 (2011) 074203

I II III IV Outlines Introduction (Motivation) Experimental details Asymmetry Effects on S/D Electrodes Vertical Field Effects on Reliability Lateral Field Effects on Reliability III Results and discussion IV Summary

Vertical E-field Effects (VDS=0.1V, VGS=25V) Only vertical e-field effects VGS=25V, E=1.2 MV/cm Only charge trapping in the channel

Experimental results (VD=0.1V, VGS=25V) 𝑽 𝒕𝒉 = ∆𝑽 𝒕𝒉 𝟏−𝒆𝒙𝒑 −( 𝒕 𝝉) 𝜷 circular U-type zigzag 𝜷 0.244 0.246 0.256 𝝉 7.87 8.59 7.71 → Negligible error rate, 10%↓ Only vertical e-field effects, VGS=25V, E=1.2 MV/cm Jeong-Min Lee1*, et al, Applied Physics Letters 93, 093504 (2008);

I II III IV Outlines Introduction (Motivation) Experimental details Asymmetry Effects on S/D Electrodes Vertical Field Effects on Reliability Lateral Field Effects on Reliability III Results and discussion IV Summary

Lateral E-field Effects (VGS=VDS=5V; Saturation)

Lateral E-field Effects (VGS=VDS=10V; Saturation)

Experimental results (VDS=VGS=5V) 𝑽 𝒕𝒉 = ∆𝑽 𝒕𝒉 𝟏−𝒆𝒙𝒑 −( 𝒕 𝝉) 𝜷 circular U-type zigzag 𝜷 6.04 5.84 7.57 𝝉 0.531 0.544 0.328 Jeong-Min Lee1*, et al, Applied Physics Letters 93, 093504 (2008);

Experimental results (VDS=VGS=10V) 𝑽 𝒕𝒉 = ∆𝑽 𝒕𝒉 𝟏−𝒆𝒙𝒑 −( 𝒕 𝝉) 𝜷 circular U-type zigzag 𝜷 0.66 0.65 0.64 𝝉 3.14 3.64 3.07 Jeong-Min Lee1*, et al, Applied Physics Letters 93, 093504 (2008);

Lateral E-field Effects (VGS=VDS=15V; Saturation) Vth = 1.5V (zig-zag) Vth = 0.65V (circular, U-type)

Experimental results (VDS=VGS=15V) 𝑽 𝒕𝒉 = ∆𝑽 𝒕𝒉 𝟏−𝒆𝒙𝒑 −( 𝒕 𝝉) 𝜷 circular U-type zigzag 𝜷 0.64 0.48 0.3 𝝉 2.83 3.26 10.42 Lateral e-field: E=15V/4um=3.8 MV/m=0.038 MV/cm S.M. Sze, Physics of Semiconductor device, p.402

Field Conversion Factors 𝜸=𝜷𝑾 𝜸:𝐞𝐟𝐟𝐞𝐜𝐭𝐢𝐯𝐞 𝐟𝐢𝐞𝐥𝐝 𝐞𝐧𝐡𝐚𝐧𝐜𝐞𝐦𝐞𝐧𝐭 𝐟𝐚𝐜𝐭𝐨𝐫 𝜷: 𝒄𝒐𝒏𝒗𝒆𝒓𝒔𝒊𝒐𝒏 factor Field conversion factors (relative permittivity (a-IGZO=16) Lateral e-field: E=0.3 MV/cm (Si avalanche breakdown) Lateral e-field: E=15V/4um=3.8 MV/m=0.038 MV/cm