A Review of MTJ Compact Models

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Presentation transcript:

A Review of MTJ Compact Models Literature Review A Review of MTJ Compact Models Richard Dorrance Advisor: Prof. Dejan Marković April 15, 2011

STT-MRAM and How it Works STT = Spin-Torque-Transfer Use current to flip free layer between two resistive states

Compact Model Requirments Bias Voltage Temperature Probabilistic Switching Regions of Operation

[1] J. D. Harms, et al. (U. Minnesota) Switching time vs. current fitting. User defined delay for switching. SPICE.

[2] A. Nigam, et al. (UVA & Grandis) Calculate the total transmission probability and density of available states (implemented in SPICE). Accuracy: ±10% RP, RAP, TMR Physics based… I think… Measured Model

[3] L.-B. Faber, et al. (U. Paris XI) Model switching probabilities across several parameters. Switching based on user defined threshold and delay. Inaccurate below 10ns pulse widths. Switching Probabilities Spectre Model

[4] A. Raychowdhury, (Intel) Uses a linearized LLGE, modified/fitted for thermally activated switching. Crude bias voltage approximation. Semi- physics, semi-empirical.

[5] D. Datta, et al. (Purdue & UCB) Uses a Non-Equilibrium Green’s Function (NEGF) based quantum transport model. (Physics Based) Voltage Bias Out of Plain Fields

[6] M. Madec, et al. (ULP) Traditional LLGE model for precessional switching. Modified Jullière conductance model to include bias voltage dependencies. Thermally activated switching not considered. VHDL-AMS implementation.

Limitations of Current Models Few model bias voltage dependencies. No published model incorporates temperature effects. Empirical models cannot predict behavior. Most physics models are too cumbersome for compact modeling. Most models are ill-suited for incorporating statistical variation.

References J. D. Harms, et al., “SPICE Macromodel of Spin-Torque-Transfer-Operated Magnetic Tunnel Junctions,” IEEE Transactions on Electron Devices, vol. 57, no. 6, pp. 1425-1430, June 2010. A. Nigam, et al., “Self Consistent Parameterized Physical MTJ Compact Model for STT-RAM,” CAS 2010, vol. 2, pp. 423-426, Oct. 2010. L.-B. Faber, et al., “Dynamic Compact Model of Spin-Transfer Torque Based Magnetic Tunnel Junction (MTJ),” DTIS '09, pp. 130-135, April 2009. A. Raychowdhury, “Model Study of 1T-1STT MTJ” MWSCAS 2010, pp. 5-8, Aug. 2010. D. Datta, et al., “Quantitative Model for TMR and Spin-Transfer Torque in MTJ Devices,” IEDM 2010, pp. 22.8.1-22.8.4, Dec. 2010. M. Madec, et al., “Compact Modeling of Magnetic Tunnel Junction,” NEWCAS-TAISA 2008, pp.229-232, June 2008.