Ultra Portable MOSFETs & Load Switches Q4, 2010 Fairchild Semiconductor MCCC LV UP

Contents Application Overview of Ultra Portable Products Packages New Products Appendix - Applications Power Path / Battery Switches Battery Charging FETs for Switching Converters

Application Overview

End Products Cell Phones / Smart Phones Cameras MP3 / PMP / Navigation Gaming E-Book Medical

MOSFETs & Load Switches in Portable Systems USB / Wall Adaptor LED Booster Single N N-FETKY Charging FETs Single P Dual P P-FETKY Boost load Switch Single N Power Selectors Single P Dual P P-FETKY Load + Load Battery Protection Switches Dual N Single N Load Switch Load Controller Buck Converter P+N Combo Dual N Single N Load Switch Load - Battery Pack Power Path Switch Single / Dual P Level Shifted L/S

Ultra Portable Packages Package Comparison Package WL-CSP MicroFET SC-89 SC-70 SSOT-3 SSOT-6 TSSOP-8 SO-8 1.6X1.6X0.55 mm3 1X1X0.4 mm3 1.7X1.7X0.78 mm3 2X2X1.0 mm3 3X2.5X1.0 mm3 2X2X1.0 mm3 3X6.4X1.0 mm3 2X2X0.8 mm3 2X2X0.55 mm3 5.2X5.3X2.0 mm3 1X1.5X0.4 mm3 1X1.5X0.65 mm3 1.7X1.7X0.6 mm3 3.3x3.3x0.8 mm3 WL-CSP & MicroFET can SAVE PCB area comparing to Lead-type Packages and enhance the Performance TSSOP-8 SO-8 WL-CSP MicroFET SC-89 SC-70 SSOT-3 SSOT-6 [MM]

MicroFET 2x2x (0.8 / 0.55mm thickness) & 2x1.6x0.8 Product ID VDS/VGS Max. Rds(on) @ 4.5V (mΩ) Configuration Typical Application FDMA507PZ 20/8 25 Single P Power Switching FDMA410NZ 23 Single N FDMA420NZ 20/12 30 FDMA430NZ 30/12 40 FDMA291P 42 ChargeFET/Switching FDMA510PZ FDMA520PZ FDMA530PZ 30/25 35 FDMA1024/1028NZ 20/(8/12) 54/68 Dual N FDMA2002NZ 123 FDMA1027P/1027PT 120 Dual P FDMA1025P 155 FDMA1029PZ 95 FDMA1023PZ 71 FDMA6023PZT 60 ChargeFET FDMA3023PZ 30/8 90 FDFMA2P028NZ 68 N – FETKY Boost FET FDFMA3N109 FDFMA2P857 P- FETKY FDFMA2P853/853T FDFMA2P029Z FDFMA2P859T FDMA1032CZ 68/95 N + P Step down Switching FET Dual Channel shown Internal Dissected view (Dual Channel) Part # ends with a “T” -> The new 0.55mm thickness!! Cross-sectional view On MTK’s reference design as ChargeFET

MicroFET 1.6x1.6 - New Release Part FSID Package Description Die Tech MOS Application FDFME3N311ZT MicroFET 1.6x1.6 Thin Single N + Schottky PT4 Z - 30/12 Boost FET FDME1023PZT Dual P ST3 Z - 20/8 Charge FET FDFME2P823ZT Single P + Schottky FDME510PZT Single P Load Switch FDME410NZT Single N PT4 Z 20/8 FDME1024NZT Dual N Power Switch FDME1034CZT Comp Pair ST3 Z - 20/8 & PT4 20/8 Z DC/DC Switcher Advantages and Features New devices with ESD Protection >1kV Low RDS(on) ratings @ VGS=1.5V Extremely Low profile – 0.55 mm height max

WL-CSP WL-CSP (Wafer Level - Chip Scale Package) Advantages of WL-CSP A package with an area smaller than 120% of the chip area. (IPC) Advantages of WL-CSP Complete Portfolio – First & Smallest Nch FET Very Small Size; 1X1X0.4mm3 , 1X1.5X0.4mm3, 1X1.5X065mm3 Excellent Thermal Performance Low inductance - no bond wires ESD Protection with >2kV Zener (Parts with ‘Z’ suffix) Low RDS(on) ratings with VGS=1.5V WL-CSP 1x1.5 WL-CSP 1.0x1.0 Unit/Die Sz 1mm x 1.5mm 1mm x 1mm Total Unit Height 0.65mm/0.4mm Max 0.4mm Max Die Thickness 0.3mm / 0.15mm Max 0.15mm Max Bump Height 0.28mm / 0.21mm Max 0.21mm Max Bump Diameter 0.31mm / 0.265mm Typ 0.265mm Typ Bump Pitch 0.5mm Solder Bump Alloy 95.2Sn3.8Ag1.0Cu UBM System Backmetal MOSFET IPC : Institute for Interconnecting and Packaging Electronics Circuits 9

WL–CSP 1x1.5 and 1x1 FDZ3N513ZT Product ID VDS/VGS Max. Rds(on) @ 4.5V (mΩ) Config Profile (mm) max Size (mm) max FDZ1905PZ 20/8 126 Dual P / Common drain 0.65 1x1.5 FDZ191P 85 Single P FDZ193P 20/12 90 FDZ197PZ 64 FDZ192NZ 33 Single N FDZ391P 0.4 FDZ371PZ 94 1x1 FDZ372NZ 48 FDZ3N513ZT 30/5.5 462 N-ch + schottky Combo 0.6 FDZ3N513ZT 10

Product Information

Product Information Features and advantages of FDZ3N513ZT -. The First N-channel FETKY in 1mm x1 mm WL-CSP in the industry. -. Integrated 30V N-channel MOSFET and Low Leakage Schottky Diode in One Small Package. -. Very Small Package Dimension: 1mm2 Footprint Area . -. Low Rds(on) and Qg permit high efficiency for Boost Applications. Competition Analysis Applications Company Fairchild Part No. FDZ3N513ZT Config. Nch FETKY Package 1X1X0.625 BVDSS (V) -Min. 30 VGS (V) 5.5 VGS(th) (V) 0.5/ 0.7 / 1.5 RDS(ON) (mΩ) Max 4.5V -/ 384 / 462 3.2V -/ 410 / 520 Qg Typ. (nC) @VGS=4.5V 1 ID (A) 1.1 PD(W) Schottky Diode Forward Voltage (V) (IF=0.3A) 0.72

Product Information

FDMC510P in MLP3.3x3.3 Comparison with 2.5V rating FETs Features and Advantages -. Small Package: 3.3X3.3X0.8mm3 MLP -. Safe Operation at Low Voltage in Portable Applications -. Guarantee low Rds(on) at 1.5V Vgs -. Excellent thermal performance -. HBM ESD capability level >2 KV typical Vgs 1.5V Rds(on) @ 1.5V Vgs=2.5V rating Rds(on) @ 1.5V Vgs=1.5V rating Specification Applications Company Fairchild Part No. FDMC510P Config. Single P Package 3.3X3.3X0.8 BVDSS (V) -Min. 20 VGS (V) 8 VGS(th) (V)- Max 1 RDS(ON) (mΩ) Typ / Max 4.5V 6.4 / 8 2.5V 7.6 / 9.8 1.8V 9.2 / 13 1.5V 11 / 17 Qg Typ. (nC) @VGS=4.5V 83 ID (A) 18 PD(W) 2.3 Application Load Switch Battery Charger 5V BAT System 14

Upcoming New Products and New Release FDMA7632: MicroFET 2X2 Single N-ch 30/20 V, 9A, 19 mΩ ESD Protection Application – Voltage Regulator (Buck) Released, sampling now Vgs Max. Rds(on) mΩ 10 19 4.5 30 FDMA7630: MicroFET 2X2 FDMA3028N: MicroFET 2X2 Single N-ch 30/20 V, 11A, 13 mΩ ESD Protection Application – Voltage Regulator (Buck) Released, sampling now Dual N-ch 30/8 V, 3.8A, 38 mΩ Application – Power Path Switch, OVP FET In development , sampling soon, Q4, Release Q1 Vgs Max. Rds(on) mΩ 10 19 4.5 20 Vgs Max. Rds(on) mΩ 4.5 68 1.8 123

Appendix

Product Information: FDZ372NZ Features and Advantages -. First 1X1 WL-CSP Nch MOSFET in the industry -. Extremely Small Package: 1.0X1.0X0.4mm3 WL-CSP -. Safe Operation at Low Vcore in Portable Applications -. Guarantee low Rds(on) at 1.5V Vgs -. Excellent thermal performance Comparison with 2.5V rating FETs Vgs 1.5V Rds(on) @ 1.5V Vgs=2.5V rating Rds(on) @ 1.5V Vgs=1.5V rating Competition Analysis 1X1 CSP vs 2X2 MLP Applications Company Fairchild Part No. FDZ372NZ Config. Nch Single Package 1X1 WL CSP BVDSS (V) -Min. 20 VGS (V) ±8 VGS(th) (V)- Max 0.4/ 0.7/ 1.0 RDS(ON) (mΩ) Max 4.5V -/ 40/ 50 2.5V -/ 45/ 60 1.8V -/ 53/ 72 1.5V -/ 63/ 93 Qg Typ. (nC) @VGS=4.5V 6 ID (A) 4.7 PD(W) 1.7 Application Load Switch Battery Load Vbat Buck 1mm 2mm Load Occupies 25% of PCB area of 2X2 MLP 17

Product Information: FDZ192NZ Advantages of FDZ192NZ -. First 1X1.5 WL-CSP Nch MOSFET in the industry -. Very Small Package Dimension: 1.0X1.5X0.65mm3 -. Safe operation at low Vcore in portable -. Guarantee low Rds(on) at 1.5V Vgs -. Excellent thermal performance Comparison with 2.5V rating FETs Rds(on) @ 1.5V Vgs=2.5V rating Vgs 1.5V Rds(on) @ 1.5V Vgs=1.5V rating Competition Analysis Applications Company Fairchild Part No. FDZ192NZ Config. Single Nch Package 1X1.5 WL-CSP BVDSS (V) -Min. 20 VGS (V) ±8 VGS(th) (V)- Max 0.4/ 0.7/ 1.0 RDS(ON) (mΩ) Max 4.5V 39 2.5V 43 1.8V 49 1.5V 55 Qg Typ. (nC) @VGS=4.5V 12 ID (A) 5.3 PD(W) 1.9 Application Load Switch Battery Load Vbat Buck Li- Bat. Controller + - Load 18

Lead-frame Exposed For Low Thermal Resistance MicroFET (MicroFET) Advantages of MicroFET Exposed Lead-frame ensures superior thermal dissipation even in a small footprint size. Multiple interconnecting bonding wires can be used to lower package contribution to RDS(on) Industry Standard Footprints RoHS Compliant & Free From Halogenated Compounds & Antimony 0.55mm 0.8mm Lead-frame Exposed For Low Thermal Resistance Cross-sectional view

Lower Max Temp 95.1ºC Higher Max Temp 115.2ºC Thermal Performance Comparison Competition Lower Max Temp 95.1ºC Higher Max Temp 115.2ºC Competition: Vishay Si5853DC Chop FET (1206-8) 3x1.9 ChipFET 3x1.9 Package FDFMA2P853 MicroFET 2x2 Test for Pch FET only On Minimum pad of 2 oz copper P= V*I =0.7038*0.7163=0.504W 3x1.9 is 42% Larger Than 2x2

Comparative Analysis   MicroFET 1.6X1.6 MicroFET 2x2 SSOT-6 ChipFET 3x1.9 SC-70 Size 1.6mm x 1.6mm 2mm x 2mm 3mm x 3mm 3mm x 1.9mm Area 2.56 mm^ 2 4mm ^ 2 9mm ^ 2 5.7mm ^ 2 Height 0.55 mm 0.88mm / 0.55mm 1.1mm RӨJA - 1"x1" Single Package 70 C/W 52 C/W 78 C/W 95 C/W 300 C/W RӨJA - 1"x1" Dual Package 86 C/W 130 C/W 350 C/W Conclusions MicroFET offers the leading solution for ultra small footprint, excellent thermal performance and optimized electrical performance compared to other package types Advanced Silicon Technology ensures optimized electrical performance MicroFET Lead frame Exposed Technology ensures superior thermal performance in a smaller package footprint

Power Path Switches

Power Path/ Battery Switch Applications Why? To turn off modules that are not in use Eliminate unnecessary energy consumption and leakage current Basic Benefits: Save energy Prolong battery life MOSFETs and Load Switches Pch FETs Level Shift Load Switches Nch FETs Block Diagram of Load Management Buck Load + Load Switch Load Controller Boost Load Battery Pack - 23

1.5V Vgs Rated Parts What’s 1.5V Rated MOSFET? MOSFETs which have the specified LOW Rds(on) at Vgs=1.5V Why 1.5V Rated MOSFETs ? Vcore goes low in portable applications recently. 1.5V Rated Parts guarantee specified low Rds(on) Comparison with 2.5V rating FETs Vgs 1.5V Rds(on) @ 1.5V Vgs=2.5V rating Rds(on) @ 1.5V Vgs=1.5V rating

Example: FDZ371PZ’s Performance Part: FDZ371PZ : P-ch WL-CSP 1X1 Test Current – 700mA. Vin Vgs Surface Temperature (‘C) Voltage drop, Vd (mV) Power Dissipation (mW) -4.5V 31.2 49 34.3 -2.5V 31.3 57 39.9 -1.8V 31.5 68 47.6 -1.5V 31.9 80 56 FDZ371PZ 1X1X0.4 mm3 Vgs Rds(on) RDS(ON) (mΩ) Max 4.5V 75 2.5V 90 1.8V 110 1.5V 150 1in2 pad with 2 oz Copper Very Low Power Loss Very Low Operating Temperature Vin=4.5V Vin=2.5V Vin=1.8V Vin=1.5V

Example: FDZ372NZ’s Performance Part: FDZ372NZ : N-ch WL-CSP 1X1 Test Current – 700mA. Vin 1X1X0.4 mm3 FDZ372NZ Vgs Surface Temperature (‘C) Voltage drop, Vd (mV) Power Dissipation (mW) Rds(on) (mΩ) 4.5V 28.3 30 21 42.8 2.5V 28.4 33 23.1 47 1.8V 28.8 38 26.6 54.3 1.5V 28.9 42 29.4 60 1in2 pad with 2 oz Copper Very Low Power Dissipation Very Low Operating Temperature Vgs=4.5V Vgs=2.5V Vgs=1.8V Vgs=1.5V

Example: FDZ192NZ’s Performance Part: FDZ192NZ : N-ch WL-CSP 1X1.5 Test Current – 700mA. Vin 1X1X0.65 mm3 Vgs Surface Temperature (‘C) Voltage drop, Vd (mV) Power Dissipation (mW) Rds(on) (mΩ) 4.5V 27.5 16.8 11.76 24 2.5V 27.6 18.6 13.02 26.6 1.8V 27.7 21 14.7 30 1.5V 28.2 34.3 FDZ192NZ Very Low Power Loss Very Low Operating Temperature 1in2 pad with 2 oz Copper Vin=4.5V Vin=2.5V Vin=1.8V Vin=1.5V

Example: FDME510PZT’s Performance Part: FDME510PZT :P-ch MicroFET 1.6X1.6 Test Current – 700mA. Vin 1.6X1.6X0.55 mm3 Vgs Surface Temperature (‘C) Voltage drop, Vd (mV) Power Dissipation (mW) Rds(on) (mΩ) 4.5V 28.9 23 16.1 32 2.5V 29 27 18.9 38 1.8V 29.1 33 23.1 47 1.5V 29.2 41 28.7 58 FDME510PZT 1in2 pad with 2 oz Copper Very Low Power Loss Very Good Thermal Performance Vgs=4.5V Vgs=2.5V Vgs=1.8V Vgs=1.5V

Example: FDME410NZT’s Performance Part: FDME410NZT : N-ch MicroFET 1.6X1.6 Test Current – 700mA. Vin 1.6X1.6X0.55 mm3 Vgs Surface Temperature (‘C) Voltage drop, Vd (mV) Power Dissipation (mW) Rds(on) (mΩ) 4.5V 29.1 14 9.8 20 2.5V 29.2 16 11.2 22 1.8V 18 12.6 25 1.5V 29.5 21 14.7 30 FDME410NZT 1in2 pad with 2 oz Copper Very Low Power Loss Very Low Operating Temperature Vgs=4.5V Vgs=2.5V Vgs=1.8V Vgs=1.5V

Comparison with Competitor’s 1.8V Specified Part Parts: FDMA510PZ vs Si5463EDC (MicroFET 2X2) (ChipFET 3X1.9) Test Current = 1A Application – Battery Power Path Switch Vin=3.7V FDMA510PZ Si5463EDC Batt Pch FET System Temperature (°C) Vd (mV) Pd (mW) Rds(on) (mΩ) Foot Print FDMA510PZ 33.9 27 2X2 mm2 Si5463EDC 36.8 56 3X1.9 mm2 Minimum Copper Pad FDMA510PZ Si5463EDC Smaller Package! Better Performance!!

Level Shift Load Switches Inrush Current Can damage Load Switch when turning on Can make Vin drop when turning on Inrush Current Prevention Lengthen Rise Time Adding External RC can help to Lengthen Rise Time and Reduce Inrush Current Vin Vout Rload Cout Cin Q2 Q1 R1 C1 R2 Vin/on=3.3V, Rload=10Ω, Cin=1uF, Cout=10uF, ESR=30m Ω, No C1&R2 Peak=1.75A VIN Von Vout Iload Vin/on=3.3V, Rload=10Ω, Cin=1uF, Cout=10uF, ESR=30m Ω, C1=1uF & R2=1k Ω No Inrush Current VIN Von Vout Iload

Power Path Switch Candidates Package Product ID Config. VDS/VGS MAX Rds(on) @VGS=4.5V 2X2 MicroFET FDMA291P Single P 20 / 8 42 FDMA510PZ 30 FDMA520PZ 20 / 12 FDMA530PZ 30 / 25 35 FDMA1027P FDMA1027PT Dual P 120 FDMA1025P 155 FDMA1029PZ 95 FDMA1023PZ 71 FDMA6023PZT 60 FDMA3023PZ 30 / 8 90 1.6X1.6 MicroFET FDME1023PZT 142 FDME510PZT 47 2X1.6 MicroFET FDMJ1023PZ 112 1X1.5 WL-CSP FDZ191P 85 FDZ197PZ 64 FDZ193P FDZ391P FDZ192NZ Single N 20/8 33 1X1 FDZ371PZ 94 FDZ372NZ 48 Product ID Config. VDS/VGS MAX Rds(on) @VGS=4.5V FDMA410NZ Single N 20/8 23 FDMA420NZ 20/12 30 FDMA430NZ 30/12 40 FDMA1024NZ Dual N 68 FDMA2002NZ 123 FDMA1028NZ FDME410NZT 24 FDME1024NZT 66 Excellent Thermal Performance Very Small Size Packages Very Low Rds(on)

Battery Charging

Charging Mechanism Charging Applications in Mobile System AC Adaptor Smart Battery (Li-Polymer, 4.2V) Dual P P-FETKY Single P PMU (Charging Block) Charging Profile Charging FETs CV Vin Charging Current Battery Voltage Precharge Constant Current Vin= 5V Vbat=4.2V Vin Power Limited

Charging Waveforms Charging Profile – FDFMA2P859T (P-FETKY) VIN[1V/div] Vg[1V/div] Vbat[1V/div] ICHG[200mA/div] CV Mode 4.2V 700mA [500s/div] CC Mode Temperatures – FDFMA2P859T Safe Operation Temp << 150°C 700mA Charging Max Temp=96.4 °C

Design-in Example Cell Phone System Block Diagram PMIC FDZ191P Charging FETs FDZ191P Power Path Switch Wall Adaptor + PMIC Controller Controller Cell Phone System Actual Design-ins of FDZ191P Battery Pack -

Charging FET Candidates Package Product ID Config. VDS/VGS MAX Rds(on) @VGS=4.5V 2X2 MicroFET FDMA291P Single P 20 / 8 42 FDMA510PZ 30 FDMA520PZ 20 / 12 FDMA530PZ 30 / 25 35 FDMA1027P FDMA1027PT Dual P 120 FDMA1025P 155 FDMA1029PZ 95 FDMA1023PZ 71 FDMA6023PZT 60 FDMA3023PZ 30 / 8 90 FDFMA2P857 P – FETKY FDFMA2P853 FDFMA2P 853T FDFMA2P029Z FDFMA2P859T FJMA790 PNP BJT 35 / 5 1.6X1.6 MicroFET FDME1023PZT 142 FDFME2P823ZT FDME510PZT 47 2X1.6 MicroFET FDMJ1023PZ 112 FDFMJ2P023Z P- FETKY 1X1.5 WL-CSP FDZ1905PZ Common Drain 126 (Rss) FDZ191P 85 FDZ193P FDZ197PZ 64 1X1 CSP FDZ391P FDZ371PZ 94 Excellent Thermal Performance Very Small Size Packages Various Configuration Available Single P, Dual P,& P-FETKY Low Charging Current Dual P, P-FETKY High Charging Current Single P

Switching Converters

Boost Converter with Nch FETKY Vbatt Boost Application MOSFETs MicroFET1.6X1.6 – Nch FETKY FDFME3N311ZT MicroFET2X2 – Nch FETKY FDFMA2P028NZ FDFMA3N109 And the other Nch FETs for Boost Converter Load Boost Converter with Nch FETKY Battery Voltage  Vo=5V for Lens Motor in Camera Battery Voltage  Vo=19V for LED Backlight Boost

Buck converter with N+P Combo Load Buck Converter Application MOSFETs MicroFET2X2 FDMA1032CZ (N+P Combo) MicroFET1.6X1.6 FDME1034CZT (N+P Combo) Product ID Configuration VDS/VGS Max. Rds(on) @ 4.5V (mΩ) FDME1034CZT N + P 20/8 66/142 FDMA1032CZ 20/12 68/95

Nch FETKY / Nch Single / N+P Combo Package Product ID Config. VDS/VGS MAX Rds(on) @VGS=4.5V 2X2 MicroFET FDFMA2P028NZ N – FETKY 20/12 68 FDFMA3N109 30/12 123 FDMA410NZ Single N 20/8 23 FDMA420NZ 30 FDMA430NZ 40 FDMA1024NZ Dual N 54 FDMA1028NZ FDMA2002NZ 1.6X1.6 MicroFET FDME410NZT 24 FDME1024NZT 66 1X1.5 WL-CSP FDZ192NZ 33 1X1 FDZ372NZ ‘20/8 48 Product ID Configuration VDS/VGS Max. Rds(on) @ 4.5V (mΩ) FDME1034CZT N + P 20/8 66/142 FDMA1032CZ 20/12 68/95

Level Shift Load Switch Portfolio FSID Vin Range Von/off Range Rds(on) (mΩ) @ Vin Max. Current Package FDG6323L 2.5 - 8V 1.5 - 8V 550 @ 5V 600mA SC70-6 FDG6324L 3 - 20V 750 @ 5V FDG6331L 1.8 - 8V 0.4 - 8V 260 @ 4.5V 800mA FDG6342L 0.65 - 8V 150 @ 4.5V 1500mA FDC6323L 3 - 8V 200 @ 5V SSOT-6 FDC6324L 300 @ 5V FDC6325L 130 @ 5V 1800mA FDC6326L FDC6329L 70 @ 5V 2500mA FDC6330L 125 @ 5V 2300mA FDC6331L 55 @ 4.5V 2800mA FDY6342L 500 @ 4.5V 830mA SC89-6

Dual & Single MOSFET / Integrated LS Topology Solution: SC-89 Small Size Cost Effective Industry Standard ESD Zener Protection Low Voltage Drive

Thank You!