Cypress Automotive Flash Roadmap (NDA)

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Presentation transcript:

Cypress Automotive Flash Roadmap (NDA) Q3 2015

NOR Flash Memory Family Decoder S 29 G L 128 S Technology: J = 110 nm Floating Gate N = 110 nm MirrorBit 1 = 63 nm DRAM K = 90 nm Floating Gate P = 90 nm MirrorBit L = 65 nm Floating Gate S = 65 nm MirrorBit M = 45 nm Floating Gate T = 45 nm MirrorBit Density: 001 = 1Mb 016 = 16Mb 256 = 256Mb 04G = 4Gb 0CG = 64Gb 002 = 2Mb 032 = 32Mb 512 = 512Mb 08G = 8Gb 004 = 4Mb 064 = 64Mb 01G = 1Gb 0AG = 16Gb 008 = 8Mb 128 = 128Mb 02G = 2Gb 0BG = 32Gb Voltage: D = 2.5V L = 3.0V S = 1.8V Family: A = Standard ADP (Address-Data Parallel) C = Burst Mode ADP (Address-Data Parallel) F = Quad SPI G = Page Mode J = Simultaneous Read/Write ADP (Address-Data Parallel) K = HyperBus P = Page Mode Simultaneous Read/Write ADP (Address-Data Parallel) Series: 25 = SPI 26 = HyperFlash 27 = HyperRAM 29 = NOR 70 = Stacked Die 79 = Dual Quad SPI Prefix: S Product Selector Guide

Automotive Portfolio: Parallel NOR S29AS-J 110nm, 1.8 V S29AL-J 110nm, 3.0 V S29JL-J1 110nm, 3.0 V S29PL-J1,2 S29GL-N2 S29GL-S2 65nm, 3.0 V S29GL-T2 45nm, 3.0 V Density (Name) Initial / Page Access * Temp Range 2Gb3 110 ns / 20 ns * A, B 2Gb3 110 ns / 20 ns Contact Sales 1Gb 100 ns / 15 ns * A, B 1Gb 100 ns / 15 ns * A, B, M Q116 ≥256Mb 512Mb 100 ns / 15 ns * A, B 512Mb 100 ns / 15 ns * A, B, M Q415 256Mb 90 ns / 15 ns * A, B 128Mb 60 ns / 20 ns * A 128Mb 90 ns / 15 ns * A, B 64-128Mb 64Mb 55 ns / -- * A 64Mb 55 ns / 20 ns * A 64Mb 90 ns / 25 ns * A 64Mb 70 ns / 15 ns * A, B, M 32Mb 60 ns / -- * A 32Mb 55 ns / 20 ns * A 32Mb 90 ns / 25 ns * A 16Mb 70 ns / -- * A 16Mb 55 ns / -- * A, M ≤32Mb 8Mb 70 ns / -- * A 8Mb 55 ns / -- * A, M Production Sampling Development Concept * A = Industrial, AEC-Q100: -40ºC to +85ºC B = Industrial Plus, AEC-Q100: -40ºC to +105ºC M = Extended, AEC-Q100: -40ºC to +125ºC 1 Supports Simultaneous Read/Write Operation 2 Supports Page Mode 3 S70 series (stacked die) Industrial Automotive Availability QQYY QQYY EOL(Last-Time-Ship) QQYY

Automotive Portfolio: HyperFlash, HyperRAM, & Burst Parallel NOR HyperFlash S26KS-S1 65nm 1.8 V HyperFlash S26KL-S1 65nm 3.0 V HyperRAM S27KS-12 63nm 1.8 V S27KL-12 63nm 3.0 V S29CD-J3 110nm, 2.5 V S29CL-J3 110nm, 3.0 V Density (Name) Intial Access / DDR Clock * Temp Range 1Gb4 96 ns / 166 MHz Contact Sales 1Gb4 96 ns / 100 MHz Contact Sales ≥256Mb 512Mb 96 ns / 166 MHz * A, B, M5 NEW Q415 NEW 512Mb 96 ns / 100 MHz * A, B, M5 Q415 512Mb4 36 ns / 166 MHz Contact Sales 512Mb4 36 ns / 100 MHz Contact Sales 256Mb 96 ns / 166 MHz * A, B, M5 Q116 256Mb 96 ns / 100 MHz * A, B, M5 Q116 256Mb4 36 ns / 166 MHz Contact Sales 256Mb4 36 ns / 100 MHz Contact Sales 128Mb 96 ns / 166 MHz * A, B, M5 Q116 128Mb 96 ns / 100 MHz * A, B, M5 Q116 128Mb 36 ns / 166 MHz Contact Sales 128Mb 36 ns / 100 MHz Contact Sales 64-128Mb 64Mb 36 ns / 166 MHz * A, B Q415 64Mb 36 ns / 100 MHz * A, B Q415 32Mb 54 ns / 75 MHz * A, M, T 32Mb 54 ns / 75 MHz * A, M, T ≤32Mb 16Mb 54 ns / 66 MHz * A, M, T 16Mb 54 ns / 66 MHz * A, M, T Production Sampling Development Concept * A = Industrial, AEC-Q100: -40ºC to +85ºC B = Industrial Plus, AEC-Q100: -40ºC to +105ºC M = Extended, AEC-Q100: -40ºC to +125ºC T = Hot, AEC-Q100: -40ºC to +145ºC 1 S26 = HyperFlash 2 S27 = HyperRAM 3 AADM (Address high, Address low, Data Multiplex) Burst 4 S70 series (stacked die) 5 Contact sales Industrial Automotive Availability QQYY QQYY EOL(Last-Time-Ship) QQYY

Automotive Portfolio: SPI NOR Roadmap S25FL1-K 90nm, 3.0V 4KB1 S25FL-L 65 nm, 3.0 V S25FL-P 90 nm, 3.0 V >4KB1 S25FL-S S79FL-S2 S25FL-T 45 nm, 3.0 V S25FS-S 65 nm, 1.8 V S25FS-T 45 nm, 1.8 V Density (Name) SDR / DDR Clock * Temp Range 2Gb6 133 MHz / 100 MHz * A, B, M 2Gb6 133 MHz / 100 MHz * A, B, M 1Gb6 133 MHz / 80 MHz * A, B, M3 1Gb 133 MHz / 80 MHz * A, B, M3 Q116 1Gb 133 MHz / 100 MHz * A, B, M 1Gb6 133 MHz / 80 MHz * A, B 1Gb 133 MHz / 100 MHz * A, B, M ≥256Mb 512Mb 133 MHz / 80 MHz * A, B, M3 512Mb 133 MHz / 80 MHz * A, B, M3 Q116 512Mb 133 MHz / 100 MHz * A, B, M 512Mb 133 MHz / 80 MHz * A, B Q415 512Mb 133 MHz / 100 MHz * A, B, M 256Mb 133 MHz / 66 MHz * A, B, M Q216 256Mb 133 MHz / 80 MHz * A, B, M3 256Mb 133 MHz / 80 MHz * A, B, M3 Q116 256Mb 133 MHz / 100 MHz * A, B, M 256Mb 133 MHz / 80 MHz * A, B Q116 256Mb 133 MHz / 100 MHz * A, B, M 128Mb 133 MHz / 66 MHz * A, B, M Q316 128Mb4 104 MHz / -- * A, B 128Mb7 133 MHz / 80 MHz * A, B, M3 128Mb 133 MHz / 80 MHz * A, B Q116 128Mb5 104 MHz / -- * A, B 128Mb8 108 MHz * A, B 64-128Mb 64Mb 108 MHz / -- * A, B, M3 64Mb 108 MHz / -- * A, B, M 64Mb 104 MHz / -- * A, B 64Mb 133 MHz / 100 MHz * A, B, M Q216 32Mb 108 MHz / -- * A, B, M3 32Mb 104 MHz / -- * A, B ≤32Mb 16Mb 108 MHz / -- * A, B, M3 * A = Industrial, AEC-Q100: -40ºC to +85ºC B = Industrial Plus, AEC-Q100: -40ºC to +105ºC M = Extended, AEC-Q100: -40ºC to +125ºC 1 Logical sector size 2 S79 series, Dual Quad SPI (stacked die) 3 Contact Sales 4 S25FL129P Quad SPI 5 S25FL128P Dual SPI 6 S70 series (stacked die) 7 S25FL128S 133-MHz SDR / 80-MHz DDR 8 S25FL127S 108-MHz SDR Production Sampling Development Concept Industrial Automotive Availability QQYY QQYY EOL(Last-Time-Ship) QQYY

NAND and e.MMC Family Decoder S 34 M L 08G 2 Technology: 1 = 4x nm 2 = 32 nm Density: 01G = 1Gb 04G = 4Gb 0AG = 16Gb 02G = 2Gb 08G = 8Gb 0BG = 32Gb Voltage: L = 3.0V S = 1.8V Family: M = NAND (Address-Data Multiplexed) Series: 34 = NAND Prefix: S e.MMC S 40 41 016 1 B1 Controller: B1 = e.MMC 4.51 B2 = e.MMC 5.1 Revision: 1 = NAND MLC1 1x nm 2 = NAND MLC1 1y nm Density: 004 = 4GB 016 = 16GB 064 = 064GB 008 = 8GB 032 = 32GB 128 = 128GB Controller Architecture: 41 = e.MMC Series: 40 = Managed Memory Prefix: S 1 Multi-level cell Product Selector Guide

Automotive Portfolio: SLC NAND & e.MMC S34ML-11 4xnm, 3.0 V SLC, ONFI 1.04 S34MS-11 4x nm, 1.8 V S34ML-22 32 nm, 3.0 V S34MS-22 32 nm, 1.8 V S34SL-22, 3 S4041-1B1 1x nm, 3.0 V MLC, e.MMC 4.515 S4041-2B2 1y nm, 3.0 V MLC, e.MMC 5.15 Density; Bus Width Interface Bandwidth * Temp Range 16Gb; x8 40 MBps * I 64GB; x8 400 MBps * A 8Gb - 16Gb 32GB - 64GB 8Gb; x8 40 MBps * A, B Q118 8Gb; x8 40 MBps * A, B Q415 8Gb; x8 40 MBps * I 32GB; x8 400 MBps * A 4Gb; x8/16 40 MBps * A, B Q118 4Gb; x8 40 MBps * B Q118 4Gb; x8 40 MBps * A, B 4Gb; x8/16 40 MBps * I 4Gb; x8 40 MBps * I Q415 16GB; x8 200 MBps * W, I Q315 16GB; x8 400 MBps * A 2Gb; x8/16 40 MBps * A, B Q118 2Gb; x8 40 MBps * B Q118 2Gb; x8/16 40 MBps * I 2Gb; x8/16 40 MBps * I 2Gb; x8 40 MBps * I Q415 8GB; x8 200 MBps * W, I Q315 8GB; x8 400 MBps * A 1Gb - 4Gb 8GB - 16GB 1Gb; x8 40 MBps * A, B Q118 1Gb; x8 40 MBps * B Q118 1Gb; x8/16 40 MBps * A, B 1Gb; x8/16 40 MBps * A 1Gb; x8 40 MBps * I Q415 Production Sampling Development Concept * W = Embedded, -25ºC to +85ºC I = Industrial, -40ºC to +85ºC A = Industrial, AEC-Q100: -40ºC to +85ºC V = Industrial Plus , -40ºC to +105ºC B = Industrial Plus , AEC-Q100: -40ºC to +105ºC 1 1-bit ECC 2 4-bit ECC 3 Secure NAND 4 ONFI = Open NAND Flash Interface 5 e.MMC = Embedded Multi Media Card Industrial Automotive Availability QQYY QQYY EOL(Last-Time-Ship) QQYY