SUPERSiC® SILICON CARBIDE POCO Specialty Materials “Material Solutions for the New Millennium” SUPERSiC® SILICON CARBIDE

Exceptional growth through performance excellence. POCO MISSION Exceptional growth through performance excellence. POCO Specialty Materials HEADQUARTERS POCO VISION To be the world’s preferred source of premium graphites, carbides, and other advanced material solutions.

HISTORY OF POCO 1962 - Fine particle size graphite developed; spin-off from aerospace industry 1964 - Acquired by Pure Oil Co. 1965 - Pure merged with Union Oil Co. of California (UNOCAL) 1995 - Acquired silicon carbide (SiC) conversion technology 2000 - Poco becomes stand alone company

Polycrystalline, Purified Stoichiometrically Graphite Correct SiC SUPERSiC® Conversion Process Purified Graphite Polycrystalline, Stoichiometrically Correct SiC

SiO + CO SiO2 + C A TWO STEP REACTION A purified sand is combines with purified carbon powder at high temperature to create silicon monoxide gas and a by- product of carbon monoxide SiO2 + C SiO + CO

In the second step, the silicon monoxide gas infiltrates into purified graphite parts, converting them to silicon carbide and a by-product of carbon monoxide SiO + C SiC + CO

CONVERSION CHARACTERISTICS During the conversion the part grows During the conversion the part picks up 67% weight During the conversion the part changes color from black to a faded green color

Physical and mechanical properties: SUPERSiC® Physical and mechanical properties: Direct replacement to other silicon carbides Low density/thermal mass (2.55 g/cc) High strength/weight ratio (at RT to 1600ºC) High hardness Abrasion resistant

SUPERSiC® Chemical properties: Beta SiC (no binders or sintering agents) Inert to typical semiconductor wet etch chemicals Pure SiC (99.999%) Stoichiometric (1:1) composition, ie. no backfill CTE similar to many semiconductor films

SUPERSiC® silicon carbide SiC Coating A chemical vapor deposition process in which a CVD SiC coating is deposited onto a SiC surface. The coating is of uniform thickness (approximately 70 microns) and effectively eliminates the porosity of the underlying SUPERSiC® silicon carbide. MTS + H2 + Ar  SiC + HCl

SUPERSiC® SILICON CARBIDE SOLUTIONS FOR THE SEMICONDUCTOR INDUSTRY Increased film adhesion due to CTE match between silicon carbide and semiconductor films leads to longer run cycles. Increased equipment uptime due to fewer clean cycles of silicon carbide. Superior design flexibility and complex machining potential due to manufacturing process.

SUPERSiC® SILICON CARBIDE SOLUTIONS FOR THE SEMICONDUCTOR INDUSTRY (cont). SUPERSiC® can be used at temperatures where quartz begins to sag and melt. Increased oxidation resistance at temperatures over 500oC meets the demands of applications where graphite performance deteriorates.

ADVANTAGES OF SUPERSiC® silicon carbide (summary) Design flexibility Impervious to acid attack High mechanical strength Long lifetime Reduced cleaning frequency Low particle generation Improved die yield Reduced cost of ownership

HORIZONTAL CARRIER COST OF OWNERSHIP SiC Quartz CARRIER PRICE $600 $125 CARRIERS/FURNACE/YEAR 6 102 CARRIER COST/YEAR $3,600 $12,750 REQUALIFICATION COSTS $11,232 $22,464 SHIPPING/HANDLING $100 $1,700 CARRIER COST/FURNACE/YEAR $14,932 $36,914 ANNUAL COST SAVINGS/FURNACE $21,982 ASSUMPTIONS: Throughput of 20,000 wafers/month Process is 1275 °C N+ Drive Due to high temperature, quartz carriers are replaced every 3 weeks Clean consists of a weekly TGA clean for quartz and bi-weekly clean for SiC Requalification costs are estimated from typical process requirements and BOM calculation Cost savings do not consider the increased yields obtained based on increased equipment utilization and performance This analysis shows only savings during the first year. During the second year the COO will continue to drop due to continued use of the SiC carriers while the quartz carriers are still replaced every 3 weeks

VERTICAL CARRIER COST OF OWNERSHIP SiC Quartz CARRIER PRICE $20,000 $4,000 CARRIERS/FURNACE/YEAR 1 8 CARRIER COST/YEAR $20,000 $32,000 REQUALIFICATION COSTS $19,296 $41,808 SHIPPING/HANDLING $100 $800 CARRIER COST/FURNACE/YEAR $39,396 $74,608 ANNUAL COST SAVINGS/FURNACE $35,212 ASSUMPTIONS: Throughput of 20,000 wafers/month Process is 1275 °C N+ Drive Due to high temperature, quartz carriers are replaced every 3 weeks Clean consists of a weekly TGA clean for quartz and bi-weekly clean for SiC Requalification costs are estimated from typical process requirements and BOM calculation Cost savings do not consider the increased yields obtained based on increased equipment utilization and performance This analysis shows only savings during the first year. During the second year the COO will continue to drop due to continued use of the SiC carriers while the quartz carriers are still replaced every 3 weeks