MOSFET Solution for SMPS Fairchild semiconductor HV PCIA Consumer Power System Team Aug. 2013 Hello everyone, My name is wonhwa lee, MOSFET and diode product marketer. Let me introduce Fairchild new MOSFET solution for LED TV and Monitor PSU and BLU from now on.

Contents Overview of Super-Junction MOSFET SuperFET® II MOSFET for PSU 600V, 650V and 800V MOSFET MV MOSFET for LED BLU and SR BoostPak solution for LED BLU Appendix 800V SuperFET® II Evaluation Result 500V & 600V UniFETTM II (planar MOSFET) Line up Ordering Information At first, Let me explain the overview of SJ MOSFET compared and then introduce SuperFET2 MOSFET, the latest FSC SJ MOSFET. There are 600V, 650V and 800V MOSFETs. 600V and 650V MOSFET will be released within this year and 800V MOSFET by next year. And then introduce MV MOSFET and BoostPak solution for LED BLU. Expecially, BoostPak solution includes one MOSFET and one diode in on package for LED boost up block. Our Application engineer will give a presentation of the evaluation result with demo board.

Overview of Super-Junction MOSFET

Overview of Super Junction MOSFET Provides lower conduction and switching losses Robust and better body diode Performance Enable high power density and efficiency for power conversion systems. Lowest board space consumption and reduced component costs -5 5 10 15 20 25 30 35 40 45 50 55 60 100 200 300 400 500 600 700 Breakdown Voltage (V) Specific Rdson [mohm-cm2] Planar MOSFET A near linear relation between Rds(on) and Breakdown Voltage A significant reduction of conduction and switching losses High power density for high-end application. Super Junction MOSFET These two drawing shows the vertical structure of planar MOSFET and super junction MOSFET. Top side is source electrode and yellow part is gate electrode and bottom side is drain electrode. In case n-channel MOSFET, current flow from Drain electrode to source through n- drift area and channel under gate electrode vertically. You can see deep p-well like this in SJ MOSFET unlike planar MOSFET. This reduce the resistivity of n- drift area dramatically. SJ MOSFET has much lower Rdson than planar MOSFET based on same chip size and breakdonw voltage. This plot shows Rdon per cm2 chip size by different breakdown voltage. The Rdson of Plana MOSFET is increased exponentially but that of SJ MOSFET is increased linearly as breakdown voltage goes up. So, SJ MOSFET can achieve ver low Rdson in small package in over 600V breakdown voltage area. And SJ MOSFET has more merits like lower Qg and body diode performance as well as lower Rdson. In case of 600V MOSFET, SJ MOSFET has around 30% Qg of that of planar MOSFET based on same Rdson. So SJ MOSFET switching speed is faster than planar MOSFET. That means SJ MOSFET can improve system efficiency by reducing switching loss.

SuperFET® II MOSFET Feature and Family 600V / 650V / 800V Super Junction technology Lower Output Capacitance  Higher efficiency in light load conditions Higher body diode ruggedness and smaller reverse recovery charge (Qrr)  Better reliable system in resonant converter Family SuperFET® II - Easy Driving Series (Optimized switching) Ex) FCPF190N60E - Easy to design due to controlled dv/dt and di/dt at high current  Replace SuperFET® MOSFET SuperFET® II (Fast switching) Ex) FCPF190N60 - Maximize system efficiency but reduce gate ringing than SupreMOS® MOSFET  Replace SupreMOS® MOSFET Fast Recovery SuperFET® II Ex) FCPF190N60F This slide shows SuperFET2 MOSFET feature and Family.

SuperFET® II MOSFET for PSU

SuperFET® II Release Schedule (1) SuperFET® II - Easy Driving Series (Optimized switching) Product Name BVdss Rdson (max) Package　 Eng. sample Release FCH041N60E 600 V 41 mohm TO247 Available Released FCP/PF190N60E 190 mohm TO220 / TO220F FCP/PF260N60E 260 mohm FCP/PF380N60E 380 mohm FCD380N60E DPAK SuperFET® II (Fast switching) Product Name BVdss Rdson (max) Package　 Eng. sample Release FCH041N60 600 V 41 mohm TO247 Q4 '13 FCH070N60 70 mohm FCH/P099N60 99 mohm TO247/TO220 FCH125N60 125 mohm FCH165N60 165 mohm FCP/PF190N60 199 mohm TO220 / TO220F Available Released FCP/PF380N60 380 mohm FCPF400N60 400 mohm TO220F FCP/PF600N60 600 mohm FCD600N60Z DPAK FCD/U900N60Z 900 mohm DPAK / IPAK (S) * Surffix Z : internal zener diode

SuperFET® II Release Schedule (2) 600/650V Fast Recovery SuperFET® II Product Name BVdss Rdson (max) Package　 Eng. sample Release FCH041N60F 600 V 41 mohm TO247 Available Released FCH072N60F 72 mohm FCH104N60F 104 mohm FCP104N60F TO220 Q3 '13 Q4 '13 FCD620N60ZF 620 mohm DPAK FCH041N65F 650 V Q1 '14 Q2 '14 FCH077N65F 77 mohm FCH110N65F 110 mohm FCP110N65F FCB109N65F D2PAK FCP150N65F 150 mohm FCH190N65F 190 mohm FCP190N65F FCPF190N65F TO220F FCPF260N65F 260 mohm FCPF380N65F 380 mohm * Surffix Z : internal zener diode

SuperFET® II Release Schedule (3) 800V SuperFET® II (Fast switching) Product Name BVdss Rdson (max) Package　 Eng. sample Release FCPF4300N80Z 800 V 4300 mohm TO220F Q1 '14 Q2 '14 FCD2400N80Z 2400 mohm DPAK Q3 '14 FCPF2400N80Z FCD1300N80Z 1300 mohm FCPF1300N80Z FCD900N80Z 900 mohm FCPF900N80Z FCPF650N80Z 650 mohm FCPF400N80Z 400 mohm Available Q4 '13 FCH400N80Z TO247 * Suffix Z : internal zener diode

MV MOSFET for LED BLU & SR

Fairchild MV MOSFET History UltraFET Trench PowerTrench® 3 PowerTrench® 5 & 7 X 4 Cell density Charge Balance technology Reduces Epi Resistance Enhanced MOSFET RDS(ON) x QG FOM providing lower overall conduction and switching losses. X1 Cell density X 2 Cell density Increased Cell Density Reduces Rds(on)

New PowerTrench® MOSFET Line up (1) New PowerTrench® MOSFET(40V) Technology Part # BV Rdson (max) Qg (typ.) Package Release Plan (V) (mohm) (nC) Eng. sample Release 　PowerTrench® FDMS015N04B 40 1.5 87 PQFN56 Available Released New PowerTrench® MOSFET (60V, 75V and 80V) Technology Part # BV Rdson (max) Qg (typ.) Package Release Plan (V) (mohm) (nC) Eng. sample Release PowerTrench® FDP020N06B 60 2 204 TO220 Available Released FDMS030N06B 3.0 79 PQFN56 FDP030N06B 3.1 76 FDPF035N06B_F152 3.5 TO220F FDP023N08B 75 2.35 146 FDP027N08B 80 2.7 137 FDB024N08BL7 2.4 D2PAK-7L FDP032N08B 3.3 111 FDMS037N08B 3.7 76.8 FDMS039N08B 3.9 77 FDP039N08B 95 FDP053N08B 5.3 61

New PowerTrench® MOSFET Line up (2) New PowerTrench® MOSFET(100V and 150V) Technology Part # BV Rdson (max) Qg (typ.) Package Release Plan (V) (mohm) (nC) Eng. sample Release PowerTrench® FDB035N10A 100 3.5 89 D2PAK Available Released 　100V/150V FDP036N10A 3.6 TO220 FDP045N10A 4.5 65 FDPF045N10A TO220F FDP085N10A 8.5 31 FDPF085N10A FDP150N10A 15 16.2 FDD1600N10ALZ 160 2.78 DPAK FDT1600N10ALZ SOT223 FDH055N15A 150 5.9 92 TO247 FDP075N15A 7.5 77 FDB075N15A FDP083N15A 8.3 64.5 FDB082N15A FDB110N15A 11 41 FDPF190N15A 19 30 FDB390N15A 39 14.3 FDPF390N15A FDD390N15A FDD390N15ALZ 42 17.6 FDPF770N15A 8.6 FDD770N15A

BoostPak Solution for LED BLU

BoostPak Solution for LED BLU 24V + MOSFET SBD BoostPak Benefits Reduce PCB size (up to 20mm * 20mm) Less assembly work Better reliability with much lower diode leakage current than existing SBD Product ID BVDSS [V] RDS(on) max [mΩ] Package Po [W] ID [A] Qg [nC] Release Plan Eng. sample Release FDD850N10LD 100 75 DPAK 5lead ~ 40W 15.3 22.2 Available Released FDD1600N10ALZD 160 ~ 25W 6.8 2.78 * Target Applications : LED monitors, LED TVs <37”

Leakage current (typ.) @VR=100V BoostPak Solution for LED BLU - Diode Leakage Current 150V 5A NP diode of BoostPak TJ= 25 ℃ TJ= 100 ℃ TJ= 150 ℃ 100V 5A Schottky Diode 100V 5A Schottky Diode 100V 5A Schottky Diode 150V 5A NP diode of BoostPak 150V 5A NP diode of BoostPak Reverse Voltage, VR [V] Reverse Voltage, VR [V] Reverse Voltage, VR [V] Leakage current (typ.) @VR=100V　 @TJ =25℃ @TJ =100℃ @TJ =150℃ 100V 5A Schottky Diode 0.740 uA 146.00 uA 3300.00 uA 150V 5A NP Diode of BoostPak 0.003 uA 0.30 uA 4.81 uA

BoostPak Solution for LED BLU - Electrical specification FDD1600N10ALZD (100V, 6.8A, 160mΩ) BoostPak (N-channel Power Trench® MOSFET + Diode) Maximum Ratings TC=25oC unless otherwise noted Symbol Parameter Value Unit VDSS D-S Voltage 100 V VGSS G-S Voltage ±20 ID Drain Current Continuous 6.8 A EAS Pulsed 13.6 IF(AV) Diode Average Rectified Forward 4 IFSM Diode Non-repetitive Peak Surge 40 RθJC Thermal Resistance, J-C for MOSFET 8.4 oC/W Thermal Resistance, J-C for Diode 3.3 Electrical Characteristics VGS(th) Gate Threshold Voltage, Max. 2.8 RDS(on) Static D-S On Resistance, Max. 160 mΩ Crss Reverse Transfer Capacitance, Typ. 2.04 pF Qg(tot) Total Gate Charge at 10V, Typ. 2.78 nC VSD D-S Diode Forward Voltage, Max. 1.3 trr D-S Diode Reverse Recovery Time, Typ. 37 ns VR DC Blocking Voltage of Diode, Min. 150 VFM Max. Forward Voltage of Diode, Max. 2.5 IRM Max. Reverse Current of Diode, Max. 50 uA Reverse Recovery Time of Diode, Max. 26 FDD850N10LD (100V, 15.3A, 75mΩ) BoostPak (N-channel Power Trench® MOSFET + Diode) Maximum Ratings TC=25oC unless otherwise noted Symbol Parameter Value Unit VDSS D-S Voltage 100 V VGSS G-S Voltage ±20 ID Drain Current Continuous 15.3 A EAS Pulsed 46 IF(AV) Diode Average Rectified Forward 5 IFSM Diode Non-repetitive Peak Surge 50 RθJC Thermal Resistance, J-C for MOSFET 3.0 oC/W Thermal Resistance, J-C for Diode 2.5 Electrical Characteristics VGS(th) Gate Threshold Voltage, Max. RDS(on) Static D-S On Resistance, Max. 75 mΩ Crss Reverse Transfer Capacitance, Typ. 42 pF Qg(tot) Total Gate Charge at 10V, Typ. 22.2 nC VSD D-S Diode Forward Voltage, Max. 1.3 trr D-S Diode Reverse Recovery Time, Typ. 38 ns VR DC Blocking Voltage of Diode, Min. 150 VFM Max. Forward Voltage of Diode, Max. IRM Max. Reverse Current of Diode, Max. uA Reverse Recovery Time of Diode, Max. 22

BoostPak Solution for LED BLU - Evaluation board Top View (114 x 76 mm2) * User guide : http://www.fairchildsemi.com/an/AN/AN-FEBD850N10LD.pdf

BoostPak Solution for LED BLU - Evaluation Result FDD850N10LD (100V, 15.3A, 75mΩ) Temperature Test Loss Analysis FDD850N10LD (100V, 15.3A, 75mΩ) Waveforms Test EMI Test Vin Vout Iout Pout Q1 Ref. 24V 55V 0.64A 35.2W 61.5oC 25oC Pon Pcond Poff Ptot [%] MOSFET 0.17W 0.14W 0.11W 0.42W 31.1 Diode 0.02W 0.53W 0.38W 0.93W 68.9 FDD1600N10ALZD (100V, 6.8A, 160mΩ) Temperature Test Loss Analysis Adjustment parameters Switching Frequency Setting of DC/DC block Gate Drive Voltage Setting The gate voltage level of MOSFET is determined by ZD1. The minimum level is about 8.5V caused by UVLO range of main control IC. Operating LED Current Setting If you want to reduce the LED current at initial setting, then you have two methods that are ① reducing # of RISENSE(R45 ~ R52). ② increasing the value of R41. Vin Vout Iout Pout Q1 Ref. 20V 45V 0.56A 25.2W 57.8oC 25oC Pon Pcond Poff Ptot [%] MOSFET 0.05W 0.16W 0.02W 0.23W 23.96 Diode 0.01W 0.45W 0.26W 0.73W 76.04

800V SuperFET® II Evaluation Result Appendix 800V SuperFET® II Evaluation Result 500V & 600V UniFETTM II (planar MOSFET) Line up Ordering Information

800V SuperFET® II Evaluation Result

SuperFET® II 800V (FCPF400N80Z) - Key Parameters Datasheet Parameter comparison table Parameter 800V MOSFET FCPF400N80Z I company BVDSS 800 V ID 11 A VGS(th) 2.5~4.5 V 2.1~3.9 V RDS(ON) (Max.) 400 mohm 450 mohm Qg (Typ.) 41.4 nC 64.0 nC FOM [RDS(ON)×Qg] 16.56 Ω ·nC 28.8 Ω · nC Qgs (Typ.) 8.7 nC 8.0 nC Qgd (Typ.) 15.1 nC 30.0 nC EOSS at 400V 4.25 μJ 4.96 μJ Zener diode b/w gate and source Exist None

SuperFET® II 800V (FCPF400N80Z) - Gate Charge Item P/N Qg [nC] Qgs Qgd @Vds=480V,Id=11A FCPF400N80Z 41.4 8.67 15.1 I company 60.7 8.1 28.2

SuperFET® II 800V (FCPF400N80Z) - Coss Stored Energy : Eoss Item P/N Eoss [uJ] @Vds 100V 200V 400V 600V FCPF400N80Z 1.50 2.15 4.25 7.24 I company 1.47 2.38 4.96 8.53

AC & DC Test data of Q1 (Measured data) SuperFET® II 800V (FCP400N80Z) - Application Evaluation PCB Model : 210W Audio power board(Flyback) Test Condition Vin: 220Vac/ 60Hz, Pin : 210W / Vout=+/- 63V(1.5A) Rg.on=82Ω+Lbead, Rg.off=10//82Ω +Lbead Cds_ext=470pF Test Results Temp. profile Item P/N PKG Case Temperature Power Loss[W] of Q1 AC & DC Test data of Q1 (Measured data) Q1 [℃] Q2 [℃] Pon Pcond Poff Total BV[V] Int. Rg [Ω] Vth [V] Rds on [mΩ] Qg [nC] Qgd [nC] FCP400N80Z TO-220 59.8 61.9 0.757 0.066 0.073 0.895 898 1.03 3.66 345@5.0A 41.4 15.1 I company 61.1 63.2 0.762 0.068 0.123 0.953 1.31 3.02 351@5.0A 60.7

- Application Evaluation SuperFET® II 800V (FCP400N80Z) - Application Evaluation FCP400N80Z Turn on Turn off I company Turn on Turn off Comparison Turn on Turn off [1us/div] Vgs[5V/div] Vds[100V/div] Id[1A/div] Time[10us/div] Time[500ns/div] Time[50ns/div] [50ns/div] Vgs[5V/div] Vds[100V/div] Id[1A/div] Time[10us/div] Time[500ns/div] Time[50ns/div] FCP400N80Z FCP400N80Z I company I company Time[50ns/div] Time[50ns/div]

500V & 600V UniFETTM II Line up

500V & 600V UniFETTM II Line up Product name BVdss Rdson (max) Package Eng. Sample Release FDPF3N50NZ 500 V 2.5 ohm TO220F Available Released FDD3N50NZ DPAK FDP/PF5N50NZ 1.5 ohm TO220/F FDD5N50NZ FDP/PF8N50NZ 0.85 ohm FDD8N50NZ FDP12N50NZ 0.52 ohm TO220 FDPF12N50NZ FDP22N50N 0.21 ohm FDPF4N60NZ 600 V FDD4N60NZ FDP5N60NZ 2.0 ohm FDPF5N60NZ FDD5N60NZ FDP7N60NZ 1.25 ohm FDPF7N60NZ FDD/U7N60NZ D/IPAK FDP10N60NZ 0.75 ohm FDPF10N60NZ FDP12N60NZ 0.65 ohm FDPF12N60NZ FDPF17N60N 0.34 ohm * Surffix Z : internal zener diode

Ordering Information

Super-Junction MOSFETs Ordering Information 16 N SuperFET® I / SupreMOS® MOSFET Empty: SuperFET® I MOSFET N : SupreMOS® MOSFET Voltage Rating ( × 10 ) Current Rating [A] Channel Polarity N : N-Channel P : P-Channel Package A : TO-3P B : D2-PAK D : D-PAK E : TO-126 H : TO-247 N : TO-92 Super-Junction Technology P : TO-220 MT : PQFN88 AF : TO-3PF PF : TO-220F I : I2-PAK U : I-PAK 60 190 E RDS(ON) Max. [mΩ] Fairchild Semiconductor Body diode Type Empty : NormalFET (Trr : 180~200ns) F : FRFET (Trr : 80~100ns) U : Ultra FRFET (Trr : 40~50ns) SuperFET® II MOSFET Empty: SuperFET® II MOSFET E : SuperFET® II MOSFET - Easy Drive

MV MOSFETs Ordering Information P 030 N PowerTrench Generation Empty: PowerTrench® 3 A: PowerTrench® 5 B: PowerTrench® 7 C: PowerTrench® Next Generation Voltage Rating ( × 10 ) Channel Polarity N : N-Channel P : P-Channel Package A : TO-3P B : D2-PAK D : D-PAK MS : PQFN56 H : TO-247 N : TO-92 DMOS P : TO-220 S : 8-SOP AF : TO-3PF PF : TO-220F I : I2-PAK U : I-PAK 10 RDS(ON) Max. [mΩ] Fairchild A L7 Option L7 : D2-PAK 7lead

Contact Information Marketer: - Wonhwa Lee wonhwa.lee@fairchildsemi.com Application Engineer: - JT Lee jt.lee@fairchildsemi.com - Sungnam Kim sungnam.kim@fairchildsemi.com

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