Neighbor-cell Assisted Error Correction for MLC NAND Flash Memories

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Neighbor-cell Assisted Error Correction for MLC NAND Flash Memories Yu Cai(CMU), Gulay Yalcin (BSC), Onur Mutlu(CMU), Erich F. Haratsch(LSI), Adrian Cristal , Osman S. Unsal (BSC) , Ken Mai(CMU) Motivation & Background Measurement and Analysis Optimum read reference voltage at cross point of neighbor states Minimum BER can be achieved with optimum reading Conditional distribution has similar distance but smaller variance than overall reading Read with conditional distribution achieves smaller minimum raw BER than read with overall distribution Distribution distance Distribution variance Flow of NAC NAC inside SSD NAC Microarchitecture Key Results: Lifetime extension and performance evaluation Lifetime extension: up to 39% ECC relaxation: reduce cost by 40% Within nominal lifetime: No performance degradation Extended lifetime: Less than 5% performance overhead