Chemical Vapour Deposition (CVD)

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Presentation transcript:

Chemical Vapour Deposition (CVD) David Xiulei Ji Definition of typical CVD: The vaporized precursors are introduced into a CVD reactor and adsorb onto a substance held at an elevated temperature. Either happens: 1. Precursors decomposition (synthesis of CNT) 2. Precursors reaction with other gases or vapour to form crystal (synthesis of Metal Nitride) 10/14/2018

Typical Reactor and Process: Precursors, Carrier gases CVD process: mass transport of reactants to the growth surface (b) chemical reactions on the growth surface (c) removal of undesired composition in the product. 10/14/2018

Growth Mechanism: Substrate Different growth mode decided by Physical Review Letters (1990) 64 1943 Different growth mode decided by Strain Energy Interfacial free energy terms and lattice dismatch Thin film, Nano particles and Thin film&Nano particles 10/14/2018

Conditions That Matter in CVD Reactants flow rate and different reactants Reaction Temperature Pressure of the system Reacting Time: thickness of film or length of nano stuffs Carrier gas: Argon, H2, Water…. to achieve slow homogeneous growth Substrate: different types (Si, SiO2, Ni, quartz etc.) differently terminated ect. Position of substrate in terms of gas flow 10/14/2018

More CVD Methods: a) LP PECVD: low pressured plasma enhanced CVD------utilized in industry Limitations: Not good for deposition of materials in a large scale. b) AP PECVD: Atmospheric pressured plasma enhanced CVD c) MO CVD: Metal organo CVD. Organic ligands as reducing agent. d) Catalytic CVD (Ni, Co, Fe nano particles) e) Template based CVD such as employ Aluminium Membrane 10/14/2018

One Successful Case: Carbon Nanotube (CNT): Initially synthesized under arc discharge method, one of CVD method. Ref: Nature, (1990), 347, 354 (C60) Nature, (1991), 354, 56 (First CNT) Chemical Reviews, 2005, Vol. 105, No. 4 1039 10/14/2018

Thank you Want to know more? Please go to the journal named Chemical Vapour Deposition 10/14/2018