Sedr42021_0434.jpg Figure 4.34 Conceptual circuit utilized to study the operation of the MOSFET as a small-signal amplifier.

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Presentation transcript:

sedr42021_0434.jpg Figure 4.34 Conceptual circuit utilized to study the operation of the MOSFET as a small-signal amplifier.

sedr42021_0435.jpg Figure 4.35 Small-signal operation of the enhancement MOSFET amplifier.

sedr42021_0436.jpg Figure 4.36 Total instantaneous voltages vGS and vD for the circuit in Fig. 4.34.

sedr42021_0437a.jpg Figure 4.37 Small-signal models for the MOSFET: (a) neglecting the dependence of iD on vDS in saturation (the channel-length modulation effect); and (b) including the effect of channel-length modulation, modeled by output resistance ro = |VA| /ID.

sedr42021_0439.jpg Figure 4.39 Development of the T equivalent-circuit model for the MOSFET. For simplicity, ro has been omitted but can be added between D and S in the T model of (d).

sedr42021_0440a.jpg Figure 4.40 (a) The T model of the MOSFET augmented with the drain-to-source resistance ro. (b) An alternative representation of the T model.

sedr42021_0438a.jpg Figure 4.38 Example 4.10: (a) amplifier circuit; (b) equivalent-circuit model.