Lecture 5 OUTLINE PN Junction Diodes I/V Capacitance Reverse Breakdown

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Presentation transcript:

Lecture 5 OUTLINE PN Junction Diodes I/V Capacitance Reverse Breakdown Large and Small signal models Reading: Chapter 2.2-2.3,3.2-3.4

Hole Diffusion x x

Distribution of Diffusion Current x -b a Assume: No Recombination in the depletion region Known: Total Current is the same everywhere

Diode Current under Forward Bias The current flowing across the junction is comprised of hole diffusion and electron diffusion components: J_total x -b a

I-V Characteristic of a PN Junction Current increases exponentially with applied forward bias voltage, and “saturates” at a relatively small negative current level for reverse bias voltages. “Ideal diode” equation:

Practical PN Junctions Typically, pn junctions in IC devices are formed by counter-doping. The equations provided in class (and in the textbook) can be readily applied to such diodes if NA  net acceptor doping on p-side (NA-ND)p-side ND  net donor doping on n-side (ND-NA)n-side ID (A) VD (V)

How to make sure that current flow in a forward-biased p-n junction diode is mainly due to electrons?

Diode Saturation Current IS IS can vary by orders of magnitude, depending on the diode area, semiconductor material, and net dopant concentrations. typical range of values for Si PN diodes: 10-14 to 10-17 A/mm2 In an asymmetrically doped PN junction, the term associated with the more heavily doped side is negligible: If the P side is much more heavily doped, If the N side is much more heavily doped,

Depletion Width on the P side: r(x) (see slide 3) qND a -b x -qNA V(x)

PN Junction under Reverse Bias A reverse bias increases the potential drop across the junction. As a result, the magnitude of the electric field in the depletion region increases and the width of the depletion region widens.

PN Junction Small-Signal Capacitance A reverse-biased PN junction can be viewed as a capacitor, for incremental changes in applied voltage.

Voltage-Dependent Capacitance The depletion width (Wdep) and hence the junction capacitance (Cj) varies with VR. esi  10-12 F/cm is the permittivity of silicon. VD

Reverse-Biased Diode Application A very important application of a reverse-biased PN junction is in a voltage controlled oscillator (VCO), which uses an LC tank. By changing VR, we can change C, which changes the oscillation frequency.

Reverse Breakdown Mechanisms Zener breakdown occurs when the electric field is sufficiently high to pull an electron out of a covalent bond (to generate an electron-hole pair). Avalanche breakdown occurs when electrons and holes gain sufficient kinetic energy (due to acceleration by the E-field) in-between scattering events to cause electron-hole pair generation upon colliding with the lattice.

Reverse Breakdown As the reverse bias voltage increases, the electric field in the depletion region increases. Eventually, it can become large enough to cause the junction to break down so that a large reverse current flows: breakdown voltage

Parallel PN Junctions Since the current flowing across a PN junction is proportional to its cross-sectional area, two identical PN junctions connected in parallel act effectively as a single PN junction with twice the cross-sectional area, hence twice the current.

Constant-Voltage Diode Model for Large-Signal Analysis If VD < VD,on: The diode operates as an open circuit. If VD  VD,on: The diode operates as a constant voltage source with value VD,on.

Example: Diode DC Bias Calculations This example shows the simplicity provided by a constant-voltage model over an exponential model. Using an exponential model, iteration is needed to solve for current. Using a constant-voltage model, only linear equations need to be solved.

Small-Signal Analysis Small-signal analysis is performed at a DC bias point by perturbing the voltage by a small amount and observing the resulting linear current perturbation. If two points on the I-V curve are very close, the curve in-between these points is well approximated by a straight line:

Diode Model for Small-Signal Analysis Since there is a linear relationship between the small-signal current and small-signal voltage of a diode, the diode can be viewed as a linear resistor when only small changes in voltage are of interest. Small-Signal Resistance (or Dynamic Resistance)

Small Sinusoidal Analysis If a sinusoidal voltage with small amplitude is applied in addition to a DC bias voltage, the current is also a sinusoid that varies about the DC bias current value.