Si x Ge 1-x and Si x Ge 1-x O y Films as a Thermal Sensing Material Mukti Rana and Donald Butler University of Texas at Arlington Electrical Engineering Dept. Arlington, TX Based in part by work supported by the National Science Foundation ECS

Si x Ge 1-x and Si x Ge 1-x O y Films as Sensing Material Both Si x Ge 1-x and Si x Ge 1-x O y are conventional semiconductors High TCR (~-5%/K) can be obtained with moderate resistivity value (~10 4 ohm-cm) from a suitable combination of Si x Ge 1-x O y Iborra et. al (2002) reported a TCR of -4.21%/K from RF Sputtered Si x Ge 1-x O y García et. al (2004) reported a TCR of -5.1%/K from PECVD a-Si 1-x Ge x :H,F.

Deposition: Si x Ge 1-x and Si x Ge 1-x O y Films Cosputtering from Ge + Si regions target. RF magnetron Sputtering at 160 W and 10 mTorr pressure. Si x Ge 1-x deposited in Ar environment. Si x Ge 1-x O y deposited in Ar:O environment.

Resistivity: Si x Ge 1-x

TCR and Activation Energy (Ea)

TCR and Activation Energy: Si x Ge 1-x

Optical Bandgap: Si x Ge 1-x

Resistivity: Si x Ge 1-x O y

Activation Energy: Si x Ge 1-x O y

TCR: Si x Ge 1-x O y

Noise PSD: Si 0.15 Ge 0.85 O 1.79 μA Bias Current

Transmittance: Si 0.15 Ge 0.85 O y

Optical Bandgap: Si x Ge 1-x O y

X-ray Diffraction (XRD) Pattern for Si Ge O 0.039

Energy Dispersive X-Ray Analysis of Si Ge O Film By Scanning Electron Microscope (SEM)

Transmittance: Si x Ge 1-x

Transmittance: Glass Substrate used for Depositing Si x Ge 1-x O y and Si x Ge 1-x Thin Films

Si x Ge 1-x O y and Si x Ge 1-x : Normalized Hoogie Coefficient for 1/f-noise (α H /N) determined at 10 Hz frequency and other properties SAMPLENormalized Hooge parameter α H /N TCR (%/K) Activation Energy (E a ) (eV) Optical Bandgap (E g ) (eV) Si 0.15 Ge × Si Ge O × Si Ge O × Si Ge O < 2.58 × 10 -8* Si Ge O < 2.35 × 10 -6* Si Ge O < 4.06 × 10 -3* Si Ge × Si Ge O × Si Ge O < 4.17 × 10 -4* Si Ge O < 3.62 × 10 -4* Si Ge < 5.08 × * Si Ge O × Si Ge O < 4.19 × 10 -9* Si Ge O < 3.36 × 10 -7* Si Ge O < 1.30 × 10 -4* Ge2.07 ×