M. A. Mamun1,2, E. Forman3, R. Taus4, M. Poelker3, and A. A

Slides:



Advertisements
Similar presentations
Advanced LIGO1 Laser Induced Damage due to Particulate Contamination Billingsley, Gushwa, Phelps, Torrie, Zhang LVC meeting March 2014.
Advertisements

SEM FE Probe Surface Science Study L. Laurent, S. Tantawi, R. Kirby *This research is funded by the SLAC LDRD Program Modify Existing Scanning Electron.
Status of 500-kV DC gun at JAEA N. Nishimori, R. Nagai, R. Hajima Japan Atomic Energy Agency (JAEA) M. Yamamoto, T. Miyajima, Y. Honda KEK H. Iijima, M.
Chapter 3 HV Insulating Materials: Gases Air is the most commonly used insulating material. Gases (incl. air) are normally good as electrical insulating.
Low SEY Engineered Surface for Electron Cloud Mitigation
GaAs and CsKSb Photocathodes for DC Gun
Dean R Walters Chamber and Bellows Jan. 5, Summary Chamber The plan is to construct a chamber made of 316LN stainless steel with.
Schottky Enabled Photoemission & Dark Current Measurements John Power, Eric Wisniewski, Wei Gai Argonne Wakefield Accelerator Group Argonne National Laboratory.
PST 2007 BNL 1 Development of High- performance Polarized e- source at Nagoya University. Nagoya University M.Yamamoto, S.Okumi, T.Konomi N.Yamamoto, A.Mano,
Dark Current Measurements and Simulations Chris Adolphsen 2/4/15.
Generation and Characterization of Magnetized Bunched Electron Beam from DC Photogun for MEIC Cooler Laboratory Directed Research and Development (LDRD)
Design and Technical Challenges of the ILC Small Angle Interaction Regions October 19 th, 2006J. Borburgh, CERN, AB/BT Electrostatic separator limits With.
High Current Electron Source for Cooling Jefferson Lab Internal MEIC Accelerator Design Review January 17, 2014 Riad Suleiman.
E. Pozdeyev1 Ion Back-Bombardment in RF Guns Eduard Pozdeyev BNL with contributions from D. Kayran, V. Litvinenko, I. Ben-Zvi.
Study of Secondary Emission Enhanced Photoinjector Xiangyun Chang 1, Ilan Ben-Zvi 1,2, Andrew Burrill 1, Peter D. Johnson 2 Jörg Kewisch 1 Triveni S. Rao.
CLIC Workshop – CERN, October / 17 DC breakdown experiments for CLIC CERN, TS-MME Antoine Descoeudres, Trond Ramsvik, Sergio Calatroni, Mauro Taborelli.
GEM: A new concept for electron amplification in gas detectors Contents 1.Introduction 2.Two-step amplification: MWPC combined with GEM 3.Measurement of.
NANO 225 Micro/NanoFabrication Electron Microscopes 1.
Passivation of HPGe Detectors at LNL-INFN Speaker: Gianluigi Maggioni Materials & Detectors Laboratory (LNL-INFN) Scientific Manager: Prof. Gianantonio.
Field enhancement coefficient  determination methods: dark current and Schottky enabled photo-emissions Wei Gai ANL CERN RF Breakdown Meeting May 6, 2010.
The CEBAF 200kV Inverted Gun P. Adderley, M. BastaniNejad, J. Clark, J. Grames, J. Hansknecht, J. McCarter, M. Poelker, M. Stutzman, R. Suleiman, K. Surles-Law.
Walter WuenschLCWS October 2012 Workshops on X-band and high gradients: collaboration and resource.
Frank Batten College of Engineering & Technology Old Dominion University: Pulsed Laser Deposition of Niobium Nitride Thin Films APPLIED.
LDRD: Magnetized Source JLEIC Meeting November 20, 2015 Riad Suleiman and Matt Poelker.
Global Design Effort 1 Polarized electron source update Axel Brachmann, John Sheppard, Feng Zhou, Takashi Maruyama, -SLAC- Matt Poelker -Jlab- LCWS/ILC.
High Intensity Polarized Electron Gun Studies at MIT-Bates 10/01/2008 PESP Evgeni Tsentalovich MIT.
DC photogun vacuum characterization through photocathode lifetime studies Marcy L. Stutzman, Philip Adderley, Joseph Grames, Matthew Poelker, Ken Surles-Law.
Operated by the Southeastern Universities Research Association for the U.S. Depart. Of Energy Thomas Jefferson National Accelerator Facility Lifetime Measurements.
Advanced Welding Technique
4 th Electron-Ion Collider Workshop, Hampton University, Monday May 19 th, 2008 CEBAF Load-Lock Polarized Electron Photogun Joe Grames & Matt Poelker (Jefferson.
Development of a Single Ion Detector for Radiation Track Structure Studies F. Vasi, M. Casiraghi, R. Schulte, V. Bashkirov.
UV Laser-Induced Damage to Grazing Incidence Metal Mirrors M. S. Tillack, J. E. Pulsifer, K. Sequoia Mechanical and Aerospace Engineering Department and.
Development of High Current Bunched Magnetized Electron DC Photogun MEIC Collaboration Meeting Fall 2015 October 5 – 7, 2015 Riad Suleiman and Matt Poelker.
TILC Electron Source Update A. Brachmann, J. Sheppard, F. Zhou -SLAC – M. Poelker - Jlab - TILC, Tsukuba, April 2009.
COPPER PHOTOCATHODES DEVELOPMENTS AT ASTEC R. Valizadeh Accelerator Science and Technology Centre Science & Technology Facility Council, UK.
Rong Xiang I I Dark current measurements at the ELBE SRF gun Rong Xiang, Jochen Teichert, Pengnan Lu, Andre Arnold, Petr Murcek,
SPES Target Group Data…… INFN-CISAS-CNR collaboration The Ablation Ion Source for refractory metal ion beams A preliminary design.
RF Superconducting Materials Workshop at Fermilab, May 23 & 24, 2007 Advanced Nb oxide surface modification by cluster ion beams Zeke Insepov, Jim Norem.
DC Sputtering Disadvantage #1 Low secondary electron yield
JLEIC R&D weekly meeting, Thursday Jan 26, JLab.
Pulsed Energetic Condensation of Nb Thin Film Cavities at JLab
Introduction and Goals
Laboratory equipment Lecture (3).
M. Hernandez-Flores1, M.A. Mamun2, and M. Poelker2
Lecture 6 Metallization.
X-ray Production Sharif Qatarneh Medical Physics Division
NANO 230 Micro/NanoFabrication
Operating SRF in a "dirty" machine
Experimental Overview
Study of bialkali antimonide photocathode on NB substrate at Jlab
Magnetized Bunched Electron Beam from DC High Voltage Photogun
Study of bialkali antimonide photocathode on NB substrate at Jlab
Prepared by Dr Diane Aston, IOM3
Thomas Jefferson National Accelerator Facility
PHOTOCATHODE STUDIES Electron Energy Analyzer NEA Cathodes (GaAs)
Magnetized Electron Beam for Ion Cooling at JLEIC
ELIC Injector Working Group High-P, high-I source issues (DC)
Status of 500-kV DC gun at JAEA
Production of Magnetized Electron Beam from a DC High Voltage Photogun
R. Suleiman and M. Poelker October 12, 2018
R. Suleiman and M. Poelker September 29, 2016
Nanocharacterization (III)
Secondary Electron Emission in Photocathode RF Guns
Semiconductor Detectors
MEBT1&2 design study for C-ADS
Physics Design on Injector I
Hydrogen and Ultra-High Vacuum
Shukui Zhang, Matt Poelker, Marcy Stutzman
LLGUN2 Biased Anode Commissioning
Field-Emission mapping measurement on Copper Surface
Presentation transcript:

Evaluation of TiN-Coated Aluminum Electrodes for DC High Voltage Electron Guns M.A. Mamun1,2, E. Forman3, R. Taus4, M. Poelker3, and A.A. Elmustafa1,2 1Department of Mechanical and Aerospace Engineering, Old Dominion University, Norfolk, Virginia 23529, USA 2Applied Research Center, Thomas Jefferson National Accelerator Facility, Newport News, VA 23606, USA 3Thomas Jefferson National Accelerator Facility, Newport News, VA 23606, USA 4Frank R. Seaver College of Science and Engineering, Loyola Marymount University, Los Angeles, CA 90045, USA 41st ICMCTF, San Diego, CA April 28 - May 2, 2014

Spin polarized electron beams via photoemission from a photocathode biased at high voltage Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab also receives support from the City of Newport News and the Commonwealth of Virginia. The primary mission of the Lab is to utilize its unique Continuous Electron Beam Accelerator Facility (CEBAF) to study the atomic nucleus to gain a deeper understanding of the structure of matter. Jefferson Lab also carries out applied research with industry and university partners using a free-electron laser that was developed by the lab based on its superconducting technology. Jefferson Lab also applies its unique technical capabilities to developing radiation detectors and medical imaging devices. Proton Electron Neutron

Electron Beams via Photoemission Photocathode preparation chamber High voltage chamber Pressure ~ 10-12 Torr Even nA of field emission makes pressure increase noticeably Cathode electrode e- hν Beam quality, including transmission, improves at higher gun voltage Higher voltage = better beam quality But higher voltage often leads to field emission Field emission degrades vacuum Bad vacuum degrades photocathode yield 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA

New initiatives require higher voltage Higher operating voltage leads to a less complicated, shorter injector beam line Further reduce space charge induced emittance growth Easier to maintain a small transverse beam profile and short bunch length Biggest Obstacle: Field Emission and HV Breakdown… which lead to bad vacuum and photocathode death For DC guns Interested in higher bias voltage (500kV) & Gradient >10MV/m Stiff beam, smaller dimension, immune to space charge forces Need it for high bunch charge applications 130 kV photogun Goal : 350 kV or higher 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA

Field Emission (FE) Field Emission Fowler-Nordheim E.L. Murphy, and R.H. Good, Physical Review 102, 1464 (1956) An unregulated release of electrons from the cathode electrode when biased at high voltage. A quantum mechanical tunneling effect explained by Fowler-Nordheim, 1928. The theory assumes a single field emitter Not very realistic to implement for large electrodes as it requires knowledge about emitter areas and shapes which is unrealistic to quantify beforehand Hence, not useful to predict the onset of FE Mainly used for post-emission data analysis Field emission(FE): The unregulated release of electrons from the cathode electrode when biased at high voltage. Electron emission based mechanism: Micro-protrusions Micro-Particle based Mechanisms: Embedded impurity particles Dust particles Filamentary structures torn from the surface Gas Desorption Regenerative Ionization: Local desorption of gas pockets in high field 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA

Sources of Field Emission Electron emission based mechanism: Micro-protrusions Micro-Particle based Mechanisms: Embedded impurity particles of the polishing medium(Alumina, Diamond,…) Filamentary structures that have been torn from the surface. Dust particles attached to surface by Van der Waals forces from handling or assembling Regenerative Ionization: Local desorption of gas pockets after the bake out Ion Exchange Mechanism Liberating electrons from contaminated areas 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA

Material Aspects of Electrode Impurity and material defects Grain structure and grain boundary Surface roughness smooth surface does not guarantee cathode performance free of field emission, microscopic protrusions definitely hurts Work function of the material Thermal conductivity Electrical conductivity, etc. 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA

Choice of Electrode Materials Traditionally, we choose hard metals: Stainless steel, titanium-alloy, or molybdenum And Smooth surface Diamond paste polishing typically employed Time consuming In this work our goal is to fabricate a good electrode using inexpensive materials and techniques, and in a short amount of time. 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA

High Voltage Test Stand Materials studied: Ti-alloy (Ti-6AL-4V) Al 6061 TiN coated Al 6061 Max.voltage 225 kV Max. field strength Gap, mm F, MV/m 50 12.8 40 13.7 30 15.4 20 18.7 10 28.9 Introduce test stand. List materials that have been studied. Buffered chemical polished of niobium. “Inverted” insulator: no SF6 and no HV breakdown outside the chamber 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA

Field Emission Results 1200 grit SiC polished High FE at field strength < 15 MV/m Not a good electrode to meet the requirement 800 and 1200 grit SiC polished 1 µm IBED TiN coating Low FE at field strength < 15 MV/m Easy to fabricate and coat Diamond-paste polished Low FE at field strength < 15 MV/m Inconsistently good electrode But expensive material and labor intensive polishing 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA

SEM Results: Fabrication Al: 400 grit Al: 600 grit Al: 800 grit Al: 1200 grit TiN coated: 1200 grit 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA

Surface Appearance before HV testing 1200 grit polished Uncoated Al TiN Coated Al 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA

Al 6061 after HV conditioning and gas processing Intense localized heating from sputtering & ion bombardment during gas processing 11/9/2018

Surface images of bare aluminum SEM images of HV conditioned Al electrode (a) prior to He processing and (b) post-He processing. Lots of craters developed during gas conditioning at the field emitted sites 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA

Surface images of bare aluminum SEM and EDS of post-He processed and HV conditioned bare Al electrode depicting (a) a field emitted area and (b) the chemical analysis of the emitted area. No silica contamination Lots of oxide formation in the FE sites 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA

Surface images of TiN coated Al6061 electrode As fabricated and before HV application (a) prior to TiN coating and (b) post-TiN coating. TiN coating effectively serves to hide the underlying material defects 800 grit 1200 grit 1200 grit uncoated uncoated TiN coated RMS roughness 20 nm 16 nm 13 nm (form 2 mm line scans using profilometer on representative coupons) 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA

Surface images of TiN coated Al6061 After HV test TiN coated 1200 grit finish Al Electrode after (a) HV conditioning and He processing (max. gradient = 18.7 MV/m) (b) HV conditioning (max. gradient= 22.4 MV/m) Breakdown occurred when subjected to higher field strength 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA

Coupon assessment RMS roughness and average grain height were measured as 7 and 20 nm respectively for the scan area of 1µm×1µm. Topography of 3µm IBED TiN coating on 1200 grit polished 6061Al revealed by AFM GPa Al6061 TiN Hardness 2 18 Modulus 70 270 Hardness and Modulus as a function of contact depth for uncoated and TiN coated 6061Al. The error bars represent 3 standard error. 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA

Coupon assessment No signs of delamination or peeling off 3 µm indent 500 nm indent Load versus displacement into surface for 2 µm indents on an uncoated and TiN coated 6061 Al coupons with 1200 grit surface finish. SEM images of the residual impressions of (left) 500 nm and (right) 3 µm berkovich indents on the TiN coated 1200 grit polished 6061Al coupon. The occurrence of cracks for the larger indent was observed as pop-in events during indentation. No signs of delamination or peeling off 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA

Properties of electrode materials Commonly accepted values from literature: Al 6061 TiN Ti-6Al-4V Electrical Resistivity, ohm-cm 4E-6 30~70E-6 180E-6 Thermal Conductivity,  W/m-K 167 28.8 6.7 Modulus, Gpa 70 270 114 Hardness, GPa 2 18 6~7 Work function (ɸ), eV 3.5 5.0 4.5

Summary Maximum voltage and field strength for <100 pA: Maximum field strength at different cathode-anode gap: Field Al (He) TiN/Al (He)  Strength (MV/m) 1200 grit 800 grit 50mm 8.99 12.57 >12.79 40mm 8.51 13.33 >13.73 30mm 9.02 >15.35 20mm 9.4 18.20 17.97 Maximum voltage and field strength for <100 pA: Ti-alloy Bare Al TiN/Al 225 kV 160 kV 225 kV at 50 mm gap >18.7 MV/m 9.4 MV/m 18.2 MV/m at 20 mm gap Future works: Coat a dummy electrode ball for evaluation at 350kV Planning to test TiN/Cu too, it’s easy to polish and even better thermal conductor Study even rougher electrode surfaces coated with TiN 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA

Conclusion A reasonably polished inexpensive aluminum electrode can meet the goal of a good electrode by applying TiN coating in a short amount of time. 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA

Thank You Welcome for Q&A 11/9/2018 41st ICMCTF, April 28 - May 2, 2014, San Diego, CA, USA