Mid Infrared Detectors

Slides:



Advertisements
Similar presentations
Quantum Dot Infrared Photo-detector
Advertisements

P.V.V. Jayaweera Institute of Fundamental Studies Hantana Road, Kandy.
High Operation Temperature (HOT) Split-off Band IR Detectors
Photoreflectance of Semiconductors Tyler A. Niebuhr.
Raman Spectroscopy A) Introduction IR Raman
LECTURE- 5 CONTENTS  PHOTOCONDUCTING MATERIALS  CONSTRUCTION OF PHOTOCONDUCTING MATERIALS  APPLICATIONS OF PHOTOCONDUCTING MATERIALS.
Photodetectors Lecturer: Mauro Mosca ( University of Palermo –DEIM A.A
FOURIER TRANSFORM INFRARED SPECTROSCOPY
Chapter 7 Components of Optical Instruments. Typical spectroscopic instruments contain five components: (1) a stable source of radiant energy, (2) a transparent.
Spring 2005ISAT 253 Transducers and Sensors I Friday, March 18, 2005.
Semiconductor Light Detectors ISAT 300 Foundations of Instrumentation and Measurement D. J. Lawrence Spring 1999.
Tin Based Absorbers for Infrared Detection, Part 2 Presented By: Justin Markunas Direct energy gap group IV semiconductor alloys and quantum dot arrays.
Quantum Well Infrared Detector
Tin Based Absorbers for Infrared Detection, Part 1
1 Detectors RIT Course Number Lecture Single Element Detectors.
Infrared Spectroscopy Antonella Magnelli. Development Discovered in 1800 but commercially available in 1940s Prisms Grating Instruments Fourier-transform.
Characterization of Detectors NEP= noise equivalent power = noise current (A/  Hz)/Radiant sensitivity (A/W) D = detectivity =  area/NEP IR cut-off maximum.
Lecture 3 INFRARED SPECTROMETRY
Introduction and Applications of Infrared Spectrometry
High Operating Temperature (HOT) Split-off Band IR Detectors
Time out—states and transitions Spectroscopy—transitions between energy states of a molecule excited by absorption or emission of a photon h =  E = E.
4-1 Chap. 7 (Optical Instruments), Chap. 8 (Optical Atomic Spectroscopy) General design of optical instruments Sources of radiation Selection of wavelength.
EE580 – Solar Cells Todd J. Kaiser Lecture 04 Semiconductor Materials Chapter 1 1Montana State University: Solar Cells Lecture 4: Semiconductor Materials.
What Are Some Types of Spectroscopy ?
V. Semiconductor Photodetectors (PD)
1 University of Petra Faculty of Science & Arts Department of Chemistry Seminar I.R Spectroscopy By Firas Al-ouzeh Supervisor : Nuha I. Swidan Summer 2007.
References Hans Kuzmany : Solid State Spectroscopy (Springer) Chap 5 S.M. Sze: Physics of semiconductor devices (Wiley) Chap 13 PHOTODETECTORS Detection.
1.1 Introduction Energy of IR photon Near IR 12, cm -1 Mid IR cm -1 Far IR cm -1 Energy of IR photons insufficient to cause.
Electromagnetic Waves 18.1 p Electromagnetic Waves Are transverse waves consisting of changing electric fields and changing magnetic fields They.
Introduction to Excited Elements Lab
Brad Gussin John Romankiewicz 12/1/04 Quantum Dots: Photon Interaction Applications.
Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes APPLIED PHYSICS LETTERS 101, (2012)
1 Stephen SchultzFiber Optics Fall 2005 Semiconductor Optical Detectors.
Title Light Detectors. Characteristics  Sensitivity  Accuracy  Spectral Relative Response(R( ))  Absolute Sensitivity(S( ))  Signal-to-noise ratio.
Gad Bahir – Technion Nanotechnology Workshop Quantum Dots Infrared Photodetectors (QDIPs) Gad Bahir Collaboration: E. Finkman, (Technion) D. Ritter.
Unit 3 Optoelectronics Devices. 7.1 Optoelectronic Devices: Introduction: Optoelectronics is the field that deals with the study of devices that emit,
Spectroscopy and Atomic Spectra A satellite orbiting the Earth contain gravitational potential energy. The satellite can orbit the Earth at any height.
Fourier Transform Infrared (FTIR) Spectrometer Subhashree Mishra ATMS Grad Student, UNR W. P. Arnott Physics, UNR Introduction to Atmospheric Instrumentation.
Issued: May 5, 2010 Due: May 12, 2010 (at the start of class) Suggested reading: Kasap, Chapter 5, Sections Problems: Stanford University MatSci.
Bandgap (eV) Lattice Constant (Å) Wavelength ( ㎛ ) GaN AlN InN 6H-SiC ZnO AlP GaP AlAs.
A dynamic database of molecular model spectra
A semiconductor material cannot be viewed as a collection of non interacting atoms, each with its own individual energy levels. Because of the proximity.
Third Generation Solar cells
RAMAN EFFECT.
Infrared Spectroscopy (and the Cassini Composite Infrared spectrometer) Adam Ginsburg September 25, 2007.
II-VI Semiconductor Materials, Devices, and Applications
Current and future ground-based gravitational-wave detectors
Components of Optical Instruments
Raman spectroscopy Solid state spectroscopy class
THERMOGRAPHY.
Chem. 133 – 3/30 Lecture.
UConn L ECE 5212 Photodetectors.
Infra Red Thermal Imaging
P- type Si Homojunction Interfacial Workfunction Internal Photoemission Dual-Band Detector Responding in Near- and Far-Infrared Regions G. Ariyawansa.
Thermal detectors for Far-Infrared
High Operating Temperature Split-off Band IR Detectors
OPTICAL SOURCE : Light Emitting Diodes (LEDs)
Photonics-More 22 February 2017
Infra Red Thermal Imaging
Introduction & Its instrumentation
V. Semiconductor Photodetectors (PD)
Chapter 3. Components of Optical Instruments
Photonics-LED And LASER 29 February 2016
High Power, Uncooled InGaAs Photodiodes with High Quantum Efficiency for 1.2 to 2.2 Micron Wavelength Coherent Lidars Shubhashish Datta and Abhay Joshi.
Review of semiconductor physics
Raman Spectroscopy A) Introduction IR Raman
ECE699 – 004 Sensor Device Technology
Chapter – 8 Fluorescence
Photonics-More 6 March 2019 One More slide on “Bandgap” Engineering.
Raman Spectroscopy A) Introduction IR Raman
Presentation transcript:

Mid Infrared Detectors Presentation by Ruqayyah Askar PHYS 689 April 27, 2018

Outline Introduction General principles Historical overview Types of IR detectors Current IR technologies Parameters of IR Detectors Emerging Technologies Applications of IR Detectors

Interest in Infrared Spectrum A. Rogalski, Infrared Detectors, Second Edition, Boca Raton: CRC Press (2010).

Interest in the Infrared Spectrum Molecules has large absorption cross- sections in the mid- infrared region of the spectrum. Figure. HITRAN simulation of absorption bands of various molecules in the 3-5 µm spectral region. All species are plotted with identical relative concentration. Spectral overlap limits the choices of interference-free absorption lines. I. T. Sorokina, K. L. Vodopyanov, Appl. Phys. 89, 445-516 (2003).

General Principles The Electromagnetic Spectrum

General Principles The Electromagnetic Spectrum A. Rogalski, Infrared Detectors, Second Edition, Boca Raton: CRC Press (2010).

Historical Overview Initial discovery of infrared radiation by the German astronomer F. W. Herschel in 1800, using thermometers. The German physicist Th. J. Seebeck discovered the first thermocouple in 1821. Sir Frederick William Herschel (1738-1822) Thomas Johann Seebeck (1770-1831)

Langley‘s Bolometer (1881) Historical Overview In 1829, the Italian physicist L. Nobili constructed the first thermopile, which was modified later by Melloni in 1833. The bolometer follows in 1881 with more sensitivity. Nobili‘s Thermopile, Virtual Museum Melloni‘s Thermo-multiplier (1833) Langley‘s Bolometer (1881) Privat-Deschanel, "Elementary treatise on natural philosophy," Augustin 1821-1883, 187376 (1873-76). S. P. Langley, “The Bolometer," Nature Publishing Group, 14-16 (1881).

Historical Overview In 1873, selenium was used in an experiment by an English electrical engineer W. Smith, after he discovered the photoconductive effect. Case developed the first IR photoconductor in 1917 with high responsivity. Willoughby Smith

Historical Overview Cs-O-Ag phototube appeared in 1930. No further development until about 1940. Lead Sulfide ( PdS ) was discovered as a photoconductive with response up to 3 µm by Kutzscher in Germany. First practical IR detector is based on PbS. Cashman showed that the lead salt family ( PbSe and PbTe) has the promise as IR detectors.

Historical Overview Lead Sulfide ( PdS ) photoconductors manufactured in Germany in about 1943, and produced in the US and England (1944, 1945). After discovery of transistor in the early 1950s, the first extrinsic photoconductive detectors were developed. Advances in narrow bandgap semiconductors for more sensitivity. III-V compound semiconductor family was discovered. InSb was the first material. The development of mercury-cadmium-telluride (HgCdTe) in 1959 by Lawson and co-workers.

Historical Overview Photolithography was available in the early 1960s, and was applied to make IR detector arrays. In 1967, first paper on extrinsic Si detector was published by Soref. Extrinsic Si was considered after Boyle and Smith invented the charge-coupled devices ( CCDs). In the 1980s, the second generation of HgCdTe infrared systems was developed with low power dissipation. A. Rogalski, Infrared Detectors, Second Edition, Boca Raton: CRC Press (2010).

Types of IR Detectors The two main types of IR detectors: Thermal detectors: - Operate based on detecting thermal effects of incident IR radiation. - Low coat and low performance. Photonic detectors: - Incident IR radiation causes intrinsic or extrinsic electronic excitations. - High cost and high performance Infrared Thermometer - MLX90614 PDA20H PbSe Detector 1.5-4.8 µm

Current IR Technologies Currently, high performance IR technologies are mainly based on - Grown structures of small bandgap mercury-cadmium- telluride ( MCT ) - Indium-antimonide ( InSb ) - GaAs based quantum well infrared photoconductors (QWIPs) The material is chosen based on the application and the wavelength.

Current IR Technologies The energy band diagram of MCT and QWIP showing electronic transitions. A. Karim and J. Y. Andersson, IOP Conf. Ser, Mater. Sci. Eng. 51, 012001 (2013)

Parameters of IR Detectors Responsitivity (R). Noise equivalent power (NEP). Detectivity (D).

Emerging Technologies The demand is for lower cost high performance detectors. Some of the emerging technologies include: - Quantum dot infrared photodetectors (QDIPs) - Type-II strained layer super-lattice. - QDIPs with type-II band alignment.

Emerging Technologies Figure: Comparison of the detectivity of various available detectors when operated at the indicated temperature. C. Tan and H. Mohseni, Nanophotonics 7(1), 169-197 (2017).

Emerging Technologies Table: Summary of the advantages and the disadvantages of the current nanostructure-enhanced IR photodetectors. C. Tan and H. Mohseni, Nanophotonics 7(1), 169-197 (2017).

Emerging Technologies Michelson Interferometer-based technologies Interferometric autocorrelation setup in our laboratory.

Emerging Technologies Dual comb Infrared Laser Spectroscopy a) Time domain of dual comb spectroscopy, b) Frequency domain of dual comb spectroscopy. A. Schliesser, N. Picqué, T. W. Hänsch, Nature Photonics 6, 440-449 (2012).

THANK YOU