Steven DenBaars Materials and ECE Departments

Slides:



Advertisements
Similar presentations
Report for China Frontier Workshop (June 22nd 2006 Beijing) Wang Zhanguo Key Lab. of Semiconductor Materials Science, Institute of Semiconductors, Chinese.
Advertisements

Latest development of InGaN and Short-Wavelength LD/LED/VCSEL 屠嫚琳 Man-lin Tu.
May Chuck DiMarzio, Northeastern University ECE-1466 Modern Optics Course Notes Part 9 Prof. Charles A. DiMarzio Northeastern University.
COST Action MP0805 Meeting, Istanbul, April 12-13, 2010 University of Nottingham, UK Effects of Hydrogen Irradiation on Deep Levels in MBE Grown Dilute.
Hot Electron Energy Relaxation In AlGaN/GaN Heterostructures 1 School Of Physics And Astronomy, University of Nottingham, University Park, Nottingham,
Semiconducting Light- Emitting Devices James A. Johnson 16 December 2006.
Laser etching of GaN Jonathan Winterstein Dr. Tim Sands, Advisor.
GaN based Heterojunction Bipolar Transistors
Magneto-optical study of InP/InGaAs/InP quantum well B. Karmakar, A.P. Shah, M.R. Gokhale and B.M. Arora Tata Institute of Fundamental Research Mumbai,
Saturated gain in GaN epilayers studied by variable stripe length technique Rui Li Journal Club, Electrical Engineering Boston University J. Mickevičiusa.
Ch 6: Optical Sources Variety of sources Variety of sources LS considerations: LS considerations: Wavelength Wavelength  Output power Output power Modulation.
Research Highlights – N. Pelekanos
Lecture Set No. 1 Winter 2011 ECE 162B Fundamentals of Solid State Physics Class Introduction and Crystal Structures” Prof. Steven DenBaars ECE and Materials.
University of California Santa Barbara 1 Future Optical Networks: Impact of Silicon Photonics John E. Bowers University of California, Santa Barbara.
Optical properties and carrier dynamics of self-assembled GaN/AlGaN quantum dots Ashida lab. Nawaki Yohei Nanotechnology 17 (2006)
APPLIED PHYSICS LETTERS 96, , 2010
Kansas State University III-Nitride Deep Ultraviolet Photonic Materials and Structures Jingyu Lin & Hongxing Jiang DMR Growth of III-nitride Photonic.
Gallium Nitride
KM3NeTmeeting Pylos, Greece, April of 12 Mar van der Hoek et al. electronic department PROGRESS ON OPTICAL MODULATORS FOR KM3NeT Mar van der.
Electrons, phonons, and photons in solids Optoelectronics Group Alex L Ivanov Department of Physics and Astronomy, Cardiff University Wales, United Kingdom.
Inter-institutional cooperation as a key to successful development Research and education center for physics of solid state nanostructures (REC-001) University.
INTRODUCTION  Tunable lasers are different to traditional lasers because they can continuously change their emission wavelength, or color, in a given.
UNT Nanotech Ultrafast and Nanoscale Photonics Group Arup Neogi, Department of Physics Research Areas 1.Nanostructured Optoelectronic materials for efficient.
Heterostructures & Optoelectronic Devices
Nanotechnology Application for Solar Cells: Using Quantum Dots to Modify Absorption Properties QUANTUM NANOS INC.
1 Sources and detectors of light 1)Revision: semiconductors 2)Light emitting diodes (LED) 3)Lasers 4)Photodiodes for integrated optics and optical communications.
Future Internet Architecture: The NSF FIND Program Dynamic Optical Circuit Switched (DOCS) Networks for Future Large Scale Dynamic Networking Environments.
Advisor: Prof. Yen-Kuang Kuo
Fig. 3. Temperature dependence of normalized integrated PL intensity for InGaN MQW on GaN substrates grown at Tg of 740, 780 and 800 ℃.
J.S. Colton, Universal scheme for opt.-detected T 1 measurements Universal scheme for optically- detected T 1 measurements (…and application to an n =
Gallium Nitride Research & Development Rakesh Sohal
Onoprienko N. E-71. LED or light emitting diode - a semiconductor device with a pn junction created by the optical radiation by passing electric current.
Why MOCVD and GaAs nanowires?
Chapter 9. Optoelectronic device
Turkey’s First Chip Factory: AB MicroNano
UNDERGRADUATE COURSES USING THE SMU CLEAN ROOM
Study of the strain relaxation in InGaN/GaN
Optoelectronic Integration
Strong infrared electroluminescence from black silicon
Larry Coldren Symposium
Theories and recent studies: Experimental results:
High Power, Uncooled InGaAs Photodiodes with High Quantum Efficiency for 1.2 to 2.2 Micron Wavelength Coherent Lidars Shubhashish Datta and Abhay Joshi.
Titanium: Sapphire laser
Thickness & Composition
NSF Project: Semiconductor Technology for Nanoscale Lasers and Quantum Light Sources D.G. Deppe CREOL, College of Optics and Photonics, UCF Prof. Tomo.
Laboratory of High-Power & Semiconductor Lasers
1.3µm Optical Interconnect on Silicon: A Monolithic III-Nitride Nanowire Array Photonic Integrated Circuit MRSEC Program; DMR A feasible.
Magnetic control of light-matter coupling for a single quantum dot embedded in a microcavity Qijun Ren1, Jian Lu1, H. H. Tan2, Shan Wu3, Liaoxin Sun1,
S OPTICAL COMMUNICATIONS AND INSTRUMENTS
Powering the 21st Century with Integrated Photonics
University of California
Simultaneous Wavelength Conversion and
Monolithically Integrated Mach-Zehnder Interferometer Wavelength Converter and Widely-Tunable Laser in InP Milan L. Mašanović, Vikrant Lal, Jonathon S.
Monolithically Integrated Mach-Zehnder Interferometer Wavelength Converter and Widely-Tunable Laser in InP Milan L. Mašanović, Vikrant Lal, Jonathon S.
Layer Transfer Technology for Micro-System Integration
Integrated Optical Wavelength Converters and Routers for Robust Wavelength-Agile Analog/ Digital Optical Networks Daniel J. Blumenthal (PI), John E. Bowers,
External Modulation OEIC Wavelength Converters
Integration Platforms
University of California
Monolithically Integrated Mach-Zehnder Interferometer Wavelength Converter and Widely-Tunable Laser in InP Milan L. Mašanović, Vikrant Lal, Jonathon S.
Wavelength Converter Enhancements Using QWI
University of California
External Modulation OEIC Wavelength Converters
TASK 1 Monolithically Integrated Mach-Zehnder Interferometer Wavelength Converter and Widely-Tunable Laser in InP Milan L. Mašanović, Vikrant Lal, Jonathon.
Simultaneous Wavelength Conversion and
Yasuharu Suematsu Honorary Professor Tokyo Institute of Technology
Tribute to Larry Coldren: Mentor, Colleague, Friend
Metal Organic Chemical Vapour Deposition
Photonic Integrated Circuit FMCW Lidar On A Chip
Semiconductor Double Quantum Dot Maser
Presentation transcript:

Tribute to Prof Larry Coldren for all the great collaborations with the MOCVD Lab Steven DenBaars Materials and ECE Departments Solid State Lighting and Energy Electronics Center University of California, Santa Barbara

Thanks for my 1st MOCVD System Optoelectronic Technology Center-1991 Prof. Larry Coldren and John Bowers PIs hire DenBaars as Assistant Prof. and help purchase 1st UCSB MOCVD system Thanks for my 1st MOCVD System Lasted 15 years & 500 papers!

Highly Cited & Key Papers Over 160 Joint Publications with Larry Coldren: PICs and also Nitride Lasers Highly Cited & Key Papers Indium tin oxide contacts to gallium nitride optoelectronic devices T. Margalith, M Hansen, SP DenBaars, LA Coldren - Applied Physics …, 1999 - aip.scitation.org   Cited by 257 -(Used by Cree, Lumileds, and others) Widely tunable sampled grating DBR laser with integrated electroabsorption modulator B. Mason, GA Fish, SP DenBaars, LA Coldren - IEEE Photonics …, 1999 - ieeexplore.ieee.org   Cited by 207 (Coldren group spin-outs into Agility Communications)   Design of sampled grating DBR lasers with integrated semiconductor optical amplifiers …, GA Fish, LA Coldren, SP DenBaars - IEEE Photonics …, 2000 - ieeexplore.ieee.org   Cited by 151  Measured and calculated radiative lifetime and optical absorption of  quantum structures …, E Zolotoyabko, AC Abare, SP Denbaars, LA Coldren - Physical Review B, 2000 - APS   Cited by 147 

Coldren and DenBaars Group collaborated broadly in MOCVD of InP PICs Numerous joint PhD students developed MOCVD technology for tunable lasers and SG-DBR laser: G, Fish, B. Mason, E. Skogen, J. Raring, J. Klamkin, J. Barton, M. Mashanovitch, M. Heimbuch, V. Jayaraman et al.

Did you know Larry Coldren also contributed to first GaN Blue Laser at UCSB 1997? Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD J. Bowers, UK Mishra, L Coldren, S DenBaars - … Internet Journal of …, 1997 - Abstract Room temperature (RT) pulsed operation of blue (420 nm) nitride based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates with lifetimes exceeding 6 hours have been demonstrated.   Cited by 127 (joint GaN students, A. Abare, M. Mack, T. Margalith)

Thanks for your support Larry!