طراحي و ساخت تراشه هاي VLSI (Design and Fabrication)

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Presentation transcript:

طراحي و ساخت تراشه هاي VLSI (Design and Fabrication)

ساختار ترانزيستور nMOS

ساخت ترانزيستور هنگام رشد بلور، ناخالصي (نوع p) به آن داده مي شود. ناخالصي مثلاً بُر رشد يک لايه ي SiO2 بر سراسر ويفر. فوايد: عايق براي نشاندن لايه هاي ديگر و مانعي براي ناخالصي ها. زدودن قسمتي که ميخواهيم ترانزيستور در آن شکل گيرد. رشد يک لايه ي نازک SiO2

ساخت ترانزيستور روي لايه ي نازک SiO2 (Thinox) پلي سيليکون مي نشانيم (گيت ترانزيستور). بقيه اکسيد نازک را برمي داريم. در نتيجه نواحي مربوط به تشکيل نفوذ n رو باز مي مانند. پلي و تيناکس زير آن و اکسيد ضخيم (Fox) (Field Oxide) نقش نقاب را بازي مي کنند.

ساخت ترانزيستور عمل نفوذ (diffusion) : نواحي سورس و درين تشکيل مي شوند.

ساخت ترانزيستور رشد دوباره ي Fox براي عايق بندي.

ساخت ترانزيستور باز گذاشتن محلهايي براي قرار دادن اتصالات.

ساخت ترانزيستور نشاندن فلز (Al) روي سطح ويفر با الگوي مطلوب.

الگوبندي

الگوبندي

الگوبندي

الگوبندي

الگوبندي

فلز سطح دوم براي فلز سطح دوم، روي ويفر با Fox پوشانده مي شود. جاهايي که فلز سطح 2 بايد به فلز سطح 1 متصل باشد حفره هايي به نام Via Cut ايجاد مي شوند. فلز سطح 2 ايجاد و الگوبندي مي شود.

اتصالات چندلايه

اتصالات چندلايه ي مسي

ساخت ترانزيستور http://micro.magnet.fsu.edu/electromag/java/transistor/index.html