Nanocrystal Diamond SEE Layer for MCP’s Qing Peng, Anil U. Mane, Jeffrey W. Elam Energy Systems Anirudha V. Sumant Center for Nanoscale Materials Jokela, Slade J.; Veryovkin, Igor V. Material Science Division Henry J. Frisch HEP Argonne National Laboratory
Motivation To achieve well-defined strike in the operation of MCPs, which could significantly decrease the widths of the transition time spread and single photon charge distributions.
Microchannel Plate (MCP) Configuration Functionalized by ALD Electrode Coating Cross section Top view Dia: 20-40 um
High SEE for Enhancement of Signal Electrode layer ALD SEE layer High SEE layer From Diamond Resistive layer Substrate
Diamond as High SEE candidate by PECVD Ultrananocrystal Diamond by CNM-ANL At <400C www.photek.co.uk
Nanocrystal Diamond Film as Substrate for SEE testing Substrate for diamond: Si substrate with W coating ( W is the nucleation layer for diamond) Thickness of the diamond: 20-100nm Si substrate size is around 1 inch square.
The nanocrystal diamond as high SEE layer Deposition conditions: Deposition Temperature <450C. Size of diamond crystal is 2-5 nm 98% diamond phase Electrical insulating Position of diamond coating: Top surface of MCP above the electrode coating Top 20-50 um section of the channels Concerns: It is better to remove the solution based seeding process for diamond growth What kind of aspect ratio structure, the diamond film could be deposited into.