600V and 300V Test Report

Customer Test Reports These are just a few of the test reports we have collected from satisfied customers. Customer names have been removed to protect their confidentiality.

8A Q-Series more efficient than 15A UltraFast Q-Series diode runs 6°C cooler FETs runs 2.4 to 6°C cooler Customer test report compares a 15A diode from IR with our 8A Q-Series Rectifier. Efficiency is .71% higher with Qspeed. MOSFETs run up to 6 °C cooler with Q-Series Q-Series itself runs 6.1 °C cooler Easy to use / drop in replacement No design work needed Minor design changes could result in larger efficiency gains No SilPad needed. 600V Q-Series is internally self isolated. .7% Higher Efficiency than UltraFast diode 2018/11/12

8A Q-Series replaces 10A SiC saving $2.80 Customer test report comparing SiC diode from Cree versus Q-Series: Efficiency is within 0.2% MOSFETs run 4.5°C cooler with Qspeed Almost all other components run cooler with Q-Series This customer was paying $4.00 for Cree SiC diodes. Q-Series would be < $1.40. FETs run ~4.5°C cooler With Q-Series Efficiency within .2% 2018/11/12

Q-Series Saves $1.10 & Boosts Efficiency .5% in 1kW Customer was using 4 CoolMOS FETs and a 15A UltraFast diode for PFC Customer eliminated 1 CoolMOS FET for net BOM savings of $1.10 Also .5% efficiency boost 1 kW power supply, PFC & PWM @67 kHz w/CM4800, 90VAC, TA=25°C Original Design Q-Series 1st Pass Q-Series final Actives PFC diode = 1x RHRP1560 FET = 4x SPW20N60C3 PFC diode = 1x LQA08TC600 FET = 3x SPW20N60C3 Temps TC(diode) = 90°C TC(FET) = 90°C TC(diode) = 70°C TC(FET) = 70°C Efficiency XX % XX +0.5% BOM cost impact --- Diode +$0.70 Diode +$0.70, FET -$1.8 NET: lower $1.10 * Note also: Q-Series passed testing @TA = 50C; RHRP ran away & self-destructed 2018/11/12

Q-Series can perform better than SiC This note from a leading edge North American power supply company, shows Q-Series can replace SiC and can even perform better. “We did some testing with the LQA08TC600 Qspeed (www.Qspeed.com) boost diode. It has almost identical performance to the SiC Cree diode (CDS04060A). All testing was done in a 1U 700W (12V/58A, 5V/1A) at room temperature. Note that the Qspeed part is internally self isolated. No sil pad is needed.” CREE CDS04060A (with sil pad) 86.9% efficiency Tcase = 83.4C Qspeed LQA08TC600 (with sil pad) 87.0% efficiency Tcase = 110.8C Qspeed LQA08TC600 (without sil pad) 87.3% efficiency Tcase = 84.2C 2018/11/12

Q-Series close to SiC and 1.3% more eff than UltraFast SiC and Q offer ~ same MOSFET Temp, while UltraFast causes FETs to run 20°C hotter 83.0% 83.8% 83.6% 83.3% 82.0% SiC and Q are within .2% to .3% in efficiency Q-Series offers 1.3% higher than UltraFast at 135kHz Also note 8A Q replaces 15A UltraFast 2018/11/12

Q-Series within .3% of SiC but at lower $$$ 1KW Power Supply @ the following conditions - PS2 Mechanical Size - 90VAC/50HZ Line Input - 90 KHz Synchronized Frequency in PFC and PWM, - 4 pcs SPW20N60C3 in PFC Stage (no snubber circuit) - 2 pcs IXKH35N60C5 in Dual Forward PWM Stage - Tamb = 25 degreeC LQA08TC600 IDT08S60C Efficiency 939.39W / 1279W = 73.44% 938.89W / 1274W = 73.7% < $1.15 ~ $2.40 to $4.00 2018/11/12

Q-Series within .3% of SiC – Saves $1.10 Comparing Qspeed 8A to SiC 6A Input = 90Vac Output = 750W Tamb. = 25℃ Qspeed SiC Input power(常溫)     878 W        875W Efficiency 85.42% 85.71% Tamb. = 50℃ Qspeed         SiC       Input power             884W         887W Efficiency 84.84% 84.55%                                Diode Temp.          80.62℃ 72.24℃ MOSFET Temp.      90.67℃ 89.39℃ Q-Series within .3% of SiC at 25°C Q-Series has .3% higher efficiency than SiC at 50°C TA Q-Series will usually run hotter than SiC – this is normal 2018/11/12

Using 2 Q-series in Parallel saves > $1.40 This customer used 2x 8A Q-Series in parallel to replace a single 10A SiC at 1100 Watts. The 2 Q cost $1.40 less than the single 10A SiC. Efficiencies were within .2%. The Q-Series ran cooler themselves due to better heat spreading over two devices. 2018/11/12

Q-Series operates fine at 225kHz PFC 3rd party independent testing validates Q-Series is the most energy efficient silicon rectifier technology available today. Qspeed can replace SiC and save you $.65 to $3.00 per supply. Q-Series operates at 225 kHz Cree / Infineon SiC Qspeed ST Fairchild IR Thermal Run-away 2018/11/12

Take the Qspeed Challenge We are so confident that our Q and X-Series Rectifiers will provide you with the best price - performance that we will do the comparison testing for you. Give us 3 to 5 identical power supplies. Step 1: Diode comparison with no circuit changes Step 2: Optimization with minor circuit changes Step 3: Test report To find out more about the Qspeed Challenge, contact Stu Hodge our Director of Applications Engineering: Stu@Qspeed.com 2018/11/12

Save on Q-Series – Use the money elsewhere Compared to SiC, Q-Series will save you $1.00 to $1.40 per supply On a $25 supply that is 5% savings Our recommendation: Design around Q-Series and use SiC as a 2nd source Use the savings to buy higher efficiency or to increase your profit 2018/11/12

10uS Surge / In-Rush Current – The Achilles Heel of SiC This chart shows the highest surge / in-rush current the diodes survived before failing. Q-Series Rectifiers have over 5x to 8x the surge current capabilities of SiC diodes. 4A SiC passes 75A, fails 100A 3A Q-Series passes 575A, fails 600A This test circuit had a 600A limit. A higher current circuit is now in development. 2018/11/12

LXA06TC600 v.s. IR8ETH06 in Seasonic 550W 80+ Power Supply 2018/11/12

Boost Diode Efficiency @ Tamb = 25℃ 100V/60Hz LOAD Efficiency(%) LXA06TC600 IR8ETH06 0% 0.00% 10% 75.81% 75.40% 20% 81.30% 81.02% 50% 84.21% 84.04% 80% 82.15% 81.91% 100% 80.03% 79.70% LXA08TC600 is better than > 0.33% 2018/11/12

Boost Diode and MOSFET Temp. @ Tamb = 50℃ 100V/60Hz Result Tamb. = 50℃, 100% Load LXA06TC600 IR8ETH06 Diode Temp. 94.7 108.15 MOSFET Temp. 88.1 93.9 Diode is hotter than > 13.45℃ MOSET is hotter than > 5.8℃ 2018/11/12

Conduction EMI – 110V and 230V 110V / 60Hz Result Tamb. = 25℃, 100% Load LXA06TC600 IR8ETH06 Quasi-Peak @ 14.45MHz 66.14dB 67.56dB 230V / 60Hz Result Tamb. = 25℃, 100% Load LXA06TC600 IR8ETH06 Quasi-Peak @ 14.30MHz 67.56dB 68.82dB LXA08TC600 is better > 1.26dB @ 230V Conduction EMI 2018/11/12

Radiation EMI – 110V and 230V 110V / 60Hz Result Tamb. = 25℃, 100% Load LXA06TC600 IR8ETH06 Quasi-Peak @ 116.94MHz 60.99dB 58.54dB 230V / 60Hz Result Tamb. = 25℃, 100% Load LXA06TC600 IR8ETH06 Quasi-Peak @ 114.78MHz 61.39dB 61.62dB LXA08TC600 is better > 0.23dB @ 230V Radiation EMI 2018/11/12

X-Series Diode Test Example – (2) Comparing LXA06T600 to SF10L60U Input = 90Vac Output = 400W Tamb. = 25℃ Qspeed Shidengen MOSFET(1)温度 108 111 MOSFET(2)温度 115 121 2018/11/12

75V Input, 24V/200W Output DC/DC Converter 1. Output Rectifier Diode Voltage Stress Comparison : - LQA16TC300 and 20CTH03S 2018/11/12

75V full load /100MHZ diode stress Max. Peak Voltage 289V @ Tamb. = 100℃ LQA16TC300 without Snubber Circuit 2018/11/12

Max. Peak Voltage 332V @ Tamb. = 100℃ 20CTH03S with Snubber Capacitor 220P，Resistor: 33ohms. 2018/11/12

2. Output Rectifier Diode Efficiency Comparison : - LQA16TC300 and 20CTH03S 2018/11/12

LQA16TC300，without snubber，efficiency shown as below： Test Condition Primary Side Output Power Output Current Voltage Efficiency 75V，28℃ 235.4 8.2818 24.09 84.75% 75V，100℃ 236.4 8.2837 23.942 83.89% 2018/11/12

20CTH03S，with Snubber Capacitor 220pF and Resistor 33ohm，efficiency shown as below： Test Condition Primary Side Output Power Output Current Voltage Efficiency 75V， 28℃ 235.9 8.28188.2837 24.0924.105 84.64% 75V， 100℃ 240.7 8.28378.2837 23.94223.942 82.39% Much Poor Than LQA16TC300 > 1.5% 2018/11/12