Chapter 3, Current in Homogeneous Semiconductors

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Presentation transcript:

Chapter 3, Current in Homogeneous Semiconductors Carrier Motion Current Flow Drift Diffusion Recombination/Generation Continuity Equations Use of Continuity Equations

Notation Reminder no, po: equilibrium n, p: general carrier concentrations

Reference: Pierret, Section 5.2

Electrons added to condution band. Electrons removed. Holes removed. Holes added to valence band. 3

From nT/NT no

Note: R corresponds to generation here!!

Reference: Pierret, Section 5.3.

Depend on details of situation. Equilibrium Excess carriers Gop is from light shining on the semiconductor Normal recombination. Depend on details of situation.

For normal, low-level injection, p<<ND

For direct bandgap semiconductors, R=βnp for direct band to band recombination.

Minority carrier diffusion length for holes.