K. Kambour, H. P. Hjalmarson, F. J. Zutavern and A. Mar

Slides:

Advertisements

Similar presentations

Conclusion Kenneth Moreland Sandia National Laboratories Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company,

Advertisements

Aerospace Vehicle Ground Testing Sandia National Laboratories Trisonic Wind Tunnel (TWT) Technical Characteristics Blowdown to atmosphere M = ,

Generation of Pareto Optimal Ensembles of Calibrated Parameter Sets for Climate Models Keith Dalbey, Ph.D. Sandia National Labs, Dept 1441, Optimization.

Lecture #5 OUTLINE Intrinsic Fermi level Determination of E F Degenerately doped semiconductor Carrier properties Carrier drift Read: Sections 2.5, 3.1.

Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy’s National Nuclear.

Molecular Simulations of Metal-Organic Frameworks

Modeling Generation and Nonlinear Evolution of Plasma Turbulence for Radiation Belt Remediation Center for Space Science & Engineering Research Virginia.

Carrier Transport Phenomena

April 4, PDC Mark Boslough & Barbara Jennings Sandia National Labs Albuquerque, NM Sandia is a multiprogram laboratory operated by Sandia Corporation,

Department of Electrical Engineering National Chung Cheng University, Taiwan IEEE ICHQP 10, 2002, Rio de Janeiro NCCU Gary W. Chang Paulo F. Ribeiro Department.

MODELING OF MICRODISCHARGES FOR USE AS MICROTHRUSTERS Ramesh A. Arakoni a), J. J. Ewing b) and Mark J. Kushner c) a) Dept. Aerospace Engineering University.

Kinetic Lattice Monte Carlo Simulations of Dopant Diffusion/Clustering in Silicon Zudian Qin and Scott T. Dunham Department of Electrical Engineering University.

JY Tsao ∙ Solid-State Lighting: A Case Study in S&T Evolution ∙ 2006 July 12 Solid-State Lighting: A Case Study in Science and Technology Evolution Sandia.

Improving Contaminant Mixing Models For Water Distribution Pipe Networks Siri Sahib S. Khalsa University of Virginia Charlottesville, VA

The Maxwell Demon and its Instabilities 1 Chi-Shung Yip Noah Hershkowitz JP Sheehan Umair Suddiqui University of Wisconsin – Madison Greg Severn University.

1/f noise in devices 전광선.

JY Tsao ∙ Ultra-Efficient Solid-State Lighting ∙ IEEE LEOS Newport Beach ∙ Nov 2008 Ultra-Efficient Solid-State Lighting: Performance Frontier, Progress,

MURI CONSORTIUM on COMPACT, PORTABLE PULSED POWER

Towards the Enhancement of Aircraft Cargo Compartment Fire Detection System Certification using Smoke Transport Modeling Walt Gill and Jill Suo-Anttila.

Large-amplitude oscillations in a Townsend discharge in low- current limit Vladimir Khudik, Alex Shvydky (Plasma Dynamics Corp., MI) Abstract We have developed.

Tzveta Apostolova Institute for Nuclear Research and Nuclear Energy,

TIM GFROERER, Davidson College Davidson, NC USA

Breakdown voltage calculations using PIC-DSMC Paul S. Crozier, Jeremiah J. Boerner, Matthew M. Hopkins, Christopher H. Moore, Lawrence C. Musson Sandia.

Simulation of Current Filaments in Photoconductive Semiconductor Switches K. Kambour, H. P. Hjalmarson, F. J. Zutavern and A. Mar Sandia National Laboratories*

Sandia is a multi-program laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy’s National Nuclear.

Author: Egon Pavlica Nova Gorica Polytechic Comparision of Metal-Organic Semiconductor interfaces to Metal- Semiconductor interfaces May 2003.

NEEP 541 Ionization in Semiconductors - II Fall 2002 Jake Blanchard.

Photos placed in horizontal position with even amount of white space between photos and header Sandia National Laboratories is a multi-program laboratory.

Generator Planning and Power System Analysis for Ship International Conference on Manufacturing and Engineering systems Cheng-Ting Hsu, Ngoc-Tho Pham,

ECEE 302: Electronic Devices

INFSO-RI Enabling Grids for E-sciencE SALUTE – Grid application for problems in quantum transport E. Atanassov, T. Gurov, A. Karaivanova,

Development of an analytical mobility model for the simulation of ultra thin SOI MOSFETs. M.Alessandrini, *D.Esseni, C.Fiegna Department of Engineering.

High E Field Transport BW: Sect. 8.10, p 198YC, Sect. 5.4; S, Sect. 4.13; + Outside sources.

Electronics 1 Lecture 3 Moving Charge Carriers

March 28-April, Particle Acceleratior Conference - New York, U.S.A. Comparison of back-scattering properties of electron emission materials Abstract.

Introduction to semiconductor technology. Outline –4 Excitation of semiconductors Optical absorption and excitation Luminescence Recombination Diffusion.

JY Tsao ∙ Evolution of Solid-State Lighting: Market Pull and Technology Push ∙ Xiamen ∙ 2005 Apr 13 Evolution of Solid-State Lighting: Market Pull and.

Sandia is a multi-program laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy’s National Nuclear.

Introduction to Semiconductor Technology. Outline 3 Energy Bands and Charge Carriers in Semiconductors.

Solid-State Electronics Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 1 Chap 5. Carrier Motion  Carrier Drift  Carrier Diffusion  Graded Impurity.

Noise in Semiconductors

Dr. Nasim Zafar Electronics 1 EEE 231 – BS Electrical Engineering Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.

Doping-type Dependence of Damage in Si Diodes Exposed to X-ray, Proton, and He + Irradiation MURI Meeting - June 2007 M. Caussanel 1, A. Canals 2, S. K.

D. A. Crawford, Sandia National Laboratories O. S. Barnouin-Jha, Johns Hopkins University Applied Physics Laboratory Sandia is a multiprogram laboratory.

Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors NC STATE UNIVERSITY UCSB Steady-State and Transient Electron Transport.

1 ME 381R Lecture 13: Semiconductors Dr. Li Shi Department of Mechanical Engineering The University of Texas at Austin Austin, TX

Particle and fluid models for streamers: comparison and spatial coupling Li Chao 1 in cooperation with: W.J.M. Brok 2, U. Ebert 1,2, W. Hundsdorfer 1,

Laser wake field acceleration using nano-particles Laser wake field acceleration using nano-particles Department of Physics and Photon Science, Gwangju.

The effect of runaway electrons on plasma facing components in ITER device  A serious threat to its success! Valeryi Sizyuk Ahmed Hassanein School of.

Motivation Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company for the United States Department of Energy’s National.

Collapse of Small Scales Density Perturbations

Modulation-frequency dependency of optical measurements in turbid media: Phantom and simulation studies E L Maclin1, J Kimnach1, K A Low1 , M Fabiani1,

Semiconductor Device Modeling

“Low Field”  Ohm’s “Law” holds J  σE or vd  μE

Dynamical correlations & transport coefficients

Click to edit Master title style

ENERGY LOADING AND DECAY OF N2 VIBRATION

Craig Olson, Tina Tanaka, Tim Renk, Greg Rochau, Robert Peterson

Einstein Relation—the relation between  and D

SANDIA NATIONAL LABORATORIES

Results of Eddy Current Analysis

Semiconductor Switch Simulations Texas Tech U. & Sandia National Labs

Hawaii Energy Storage Seminar: Other Energy Storage Technologies

4.4.6 Gradients in the Quasi-Fermi Levels

Multipacting Simulation for the Muon Collider Cooling Cavities*

Chemical Safety & Security Standard Operating Procedures

Review of semiconductor physics

An optical technique for measuring surface recombination velocity

Effect of equilibrium phase transition on multiphase transport in relativistic heavy ion collisions 喻梅凌华中师范大学粒子物理研究所 2019/2/24 第十届全国粒子物理大会桂林.

Quantum Mechanical Description of Displacement Damage

Presentation transcript:

Simulation of Current Filaments in Photoconductive Semiconductor Switches K. Kambour, H. P. Hjalmarson, F. J. Zutavern and A. Mar Sandia National Laboratories* Charles W. Myles** Texas Tech University 15th International IEEE Pulsed Power Conference June 16, 2005 * Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin company, for the United States Department of Energy under contract DE-AC04-94AL85000. ** Supported in part by an AFOSR MURI Contract

Outline Photoconductive Semiconductor Switches (PCSS's) Lock-on Collective Impact Ionization Theory Monte Carlo Calculations Continuum Calculations Conclusions

A PCSS

Lock-on Characterized by a persistent or 'locked-on' electric field (~5 kV/cm) after laser turn off. High conductivity state Always accompanied by the formation of current filaments. The lock-on field is much lower than the bulk breakdown field for GaAs.

Current Filaments

Bistable Switch

Carrier Distribution Function

Collective Impact Ionization Theory Explains highly conductive filaments sustained by a lock-on field lower than the breakdown field. Inside (high carrier density): the carrier-carrier scattering increases the efficiency of impact ionization for the hot carriers. Outside (low carrier density): the electric field is too low to create carriers by impact ionization.

Monte Carlo Calculations Calculating the rate of change of particle number Determining the distribution function Ensemble Monte Carlo Maxwellian

Evolution to a Steady State Solution (no carrier-carrier scattering)

Steady State Solution (no carrier-carrier scattering)

Evolution to Steady State Solutions (carrier-carrier scattering included)

Steady State Solutions (carrier-carrier scattering)

GaAs

Continuum Calculations

Continuum Results

Continuum Results V0 (KV) t (sec) VLO 50 30 1x10-9 40 1x10-10 30 1x10-9 40 1x10-10 no lock-on 1x10-11 200 60

Conclusions Collective Impact ionization Theory (CIIT) predicts that lock-on will occur in GaAs at a field much less than the intrinsic breakdown field in GaAs, in qualitative agreement with experiment. CIIT also predicts that the lock-on field will be independent of rise time and that the lock-on current will flow in stable current filaments in agreement with experiment.