NSF Berkeley site visit March 2, 1998 Technology CAD: Opportunities and Impact Andrew Neureuther Overview of Technology CAD (TCAD) Electron Interactions TEMPEST Optical Scattering Lithographic Materials 1 1

Overview of Technology CAD (TCAD) TCAD simulates process and device issues in Integrated Circuit technology Simulation has become 50,000,000 times cheaper relative to experiment since 1975 Yet demanding applications - predictive 3D - require 100 Tops, 20 G Byte disk storage, 10 runs/month Goal: Move from “Yesterday’s technology simulated tomorrow” To “Tomorrow’s technology simulated Yesterday” 2

Examples: Electron-Beam Lithography Point Focus 3

Examples: Electron-Beam Lithography Masked beam 4

Examples: Electron-Beam Lithography Performance data 5

Examples: Electron-Beam Lithography Electron interactions in uA Beams limit throughput by producing random scattering which is not understood and cannot be compensated by refocusing. Computational status 1 uA beams take a day and 30 uA take 900 days Fast Multipole Acceleration (FMA) promises nearly linear CPU with beam current and is suitable for parallelization Computational system needs 300K electrons, 100 Tops, 2 G memory, 20 G Bytes storage 10 runs/mo, system muli-views, trace-back of trajectories 6

Examples: Scattering in Optical Lithography Mask Geometry 7

Examples: Scattering in Optical Lithography OPC effect 8

Examples: Scattering in Optical Lithography Disk head SEM 9

Examples: Scattering in Optical Lithography WEB interface 10

Examples: Scattering in Optical Lithography Unwanted light scattering in optical lithography and inspection limits performance and requires careful design of recording materials, masks, wafer topography, alignment and inspection. Computational status Pushing the 1000 l3 EM barrier FDTD MEMORY scales as volume and CPU scales as volume 4/3 Computational system needs 160M nodes, 100 Tops, 10 G memory, 20 G bytes storage, 10 runs/mo, 100 runs/mo for 4x smaller problems Fly through visualization, web I/O 11

Examples: Image recording materials issues Silylation 12

Examples: Image recording materials issues Recording Materials with chemical amplification show a 20x improvement in sensitivity but suffer from reaction, state dependent diffusion (type II), moving boundaries, suppression of reaction rates by local stress Computational status (2D) Extremely stiff, 6 variables, 500 nodes Numerical Acceleration 50X Computational system needs (3D) Parallelized LU to get to 3D effects 100 Tops, 1 G memory, 20 G Bytes storage, 10 runs/month, 100 runs/month for 2D 1 Tops 13

Technology CAD: Opportunities and Impact Lithography TCAD is an area where computational simulation is resulting in better engineering. Increases in performance and programming ease will continue to advance the scale of the engineering effort. Multiple clusters of processors with high speed communication, parallel algorithms, performance analysis tools, and visualization are needed for for both quick turn around and large (100 Tops) problems. 14

Visualization: Capabilities Tools Interoperability with simulator Data management Filters Displays Local 108 pixels/sec Network 106 Web 104 Agent Views Simultaneous multi-views of system Dynamic monitoring Interactive fly through 15