Supplementary Slides for Lecture 22

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Presentation transcript:

Supplementary Slides for Lecture 22 EE130/230M Spring 2013

The Impact of MOSFET Scaling 1971 2012.5 # of Transistors: 2300 3 billions Performance: 740 KHz > 3 GHz Multiple-Core

Ideal Long-Channel MOSFET (At Saturation Region)

Non-Idealities in Long-Channel MOSFET Effective Oxide Thickness (Lec.18; Hu 5.8 ) Field-Effect Mobility (Lec.20, S4; Hu 6.3; Pierret 17.2.1) Body Bias Effect (Lec.20, S14; Hu 6.4; Pierret 18.3.1) body-effect parameter m = 1 + 3Toxe/Wdep body-effect factor Channel Length Modulation (Lec.20, S18; Hu 7.9)

Additional Issues in Short-Channel MOSFET Short-Channel Effect (Lec.22, S12; Hu 7.9; Pierret 19.1.2) Drain-Induced Barrier Lowering Source/Drain Series Resistance Band-to-band Tunneling … Velocity Saturation (Lec.22, S4; Hu 6.8-9; Pierret 19.1.4)