IGBT - Insulated Gate Bipolar Transistor

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Presentation transcript:

IGBT - Insulated Gate Bipolar Transistor

Појавом IGBT компонете почетком осамдесетих година сједињене су добре особине биполарних транзистора и MOSFET-ова. Добијене карактеристике омогућиле су израду нових управљачких кола са много већом фреквенцијом рада што је нарочито искоришћено у области енергетске електронике посебно у колима за електронско паљење мотора са унутрашњим сагоревањем.

Структура IGBT Структура IGBT компоненти заснована је на биполарном транзистору и MOSFET-у. IGBT је снажна компонента која се пре свега користи у енергетској електроници. Одликује га напонско управљање као код MOSFET-а, велика снага коју може преносити и релативно висока фреквенција односно брзина рада гледајући то из угла снажних електронских компоненти, тиристора, снажних биполарних транзистора и FET-ова. Ради се у суштини о хибридној компоненти насталој ''стапањем'' биполарног транзистора и MOSFET-а. Симболи за IGBT приказани су на слици а. Структура је приказана на слици 2.

Слика 2. Унутрашња структура

Принцип рада Укључивање IGBT врши се тако што се спој гејт-сорс поларише позитивно VGE > 0 при чему се индукује n-каnал у p-слоју.Искључује се са напоном VGE = 0. Тиристорски ефекат јавља се при веома великим струјама кроз дрејн и тада се IGBT не може нормално искључити довођењем нуле на гејт. У том случају најчешће долази до прегоревања IGBT -а. Улазна отпорност му је велика као код MOSFET-а док су губици у устаљеном стању мали као код биполарног транзистора. Производе се у опсегу за напоне од 300-1800V и струје од 10-1000А.

Употреба IGBT компоненти најчешћа је код индуктивно-отпорних потрошача који обавезно имају замајну диоду