Directed Self Assembly of Block Copolymers December 2017 Directed Self Assembly of Block Copolymers Aigerim Galyamova Chemistry Graduate Student

Outline Motivation Concept Processes Process flow Comparison Challenges

Motivation: Moore’s Law

Motivation: Physical Limitations Approaching limits for all parameters: k = 0.3 (0.15 for SADP) For EUV: λ = 13.5 nm Tool complexity and cost increase

Concept: Block Copolymers Orientation problem Alignment problem Holes and Islands!

Concept: Block Copolymers

Concept: Directed Self Assembly Graphoepitaxy: physical constrains alignment by topographic guiding force Chemoepitaxy: chemical constrains alignment driven by surface energy

Concept: Graphoepitaxy BCP assembly within the trench Topographic substrate patterning

Concept: Chemoepitaxy Epitaxial assembly upon chemical pattern Chemical Pattern consistent with BCP

Process: Directed Self Assembly LiNe SMART Hybrid Chemoepitaxy Combination

Liu-Nealey: LiNe Process PS-b-PMMA 100 nm full pitch; 35 nm line 193 nm lithography; PTD

LiNe Process MAT etch and trim 100 nm full pitch; 15 nm line PR strip

Neutral Brush spin coat LiNe Process Neutral Brush spin coat PS-b-PMMA BCP spin coat

LiNe Process BCP annealing 12.5 nm line/space L0 = 25 nm PMMA removal

SMART: Surface Modification for Advanced Resolution Technology Process PS-b-PMMA 90 nm pitch; 45 nm line 193 nm lithography; NTD

SMART Process Neutral Layer etch 90 nm pitch; 45 nm line PR strip

SMART Process Pinning Material spin coat Pinning Material brush 90 nm pitch; 45 nm line Pinning Material brush

SMART Process BCP spin coat 15 nm line/space L0 = 30 nm PMMA Removal

Comparison: LiNe vs SMART PTD; Pinning Material undergoes lithography step; Neutral Layer spin coated afterwards; Both use [Ps-b-PMMA]; Both produce similar results; SMART: NTD; Neutral Layer undergoes lithography step; Pinning Material spin coated afterwards;

BCP: PMOST-b-PTMSS L0 = 20nm Hybrid Process BCP: PMOST-b-PTMSS L0 = 20nm 193 nm lithography; PTD Guide: XPMOST

Guide Mmaterial etch and trim Hybrid Process BCP: PMOST-b-PTMSS Guide Mmaterial etch and trim Guide: XPMOST PR strip

Neutral brush spin coat Hybrid Process BCP: PMOST-b-PTMSS Neutral brush spin coat Guide: XPMOST Strip ungrafted brush

BCP spin coat, top coat spin coat Hybrid Process BCP spin coat, top coat spin coat 20 nm full pitch PMOST removal

Comparison: Chemoepitaxy vs Hybrid 200 nm Chemoepitaxy Hybrid

Challenges Alignment control on large scale LER has to be improved Within wafer Wafer from wafer LER has to be improved 200 nm

Summary: Directed Self Assembly DSA: Can be integrated within existing systems/tools Low cost processes CD controlled with polymer design Pathway for new developments

Thank you for your attention!

References Blachut, G. and Willson, C. (2016). A Hybrid Chemo-/Grapho-Epitaxial Alignment Strategy for Defect Reduction in Sub-10 nm Directed Self-Assembly of Silicon-Containing Block Copolymers. Chemistry of Materials, 28(24), pp.8951-8961. Kim, J. and Wan, J. (2013). The SMARTTM Process for Directed Block Co-Polymer Self-Assembly. Journal of Photopolymer Science and Technology, 26(5), pp.573-579. Garner, G. and Rincon Delgadillo, P. (2017). Design of surface patterns with optimized thermodynamic driving forces for the directed self-assembly of block copolymers in lithographic applications. Molecular Systems Design & Engineering, 2(5), pp.567-580.

References Nikonereview.com. (2017). DNP and AZ-EM Speakers Identify the Need for Lithography Paradigm Changes. [online] Available at: https://nikonereview.com/ereview/spring_2013/featured.html [Accessed 20 Nov. 2017]. Jeong, S. and Kim, J. (2013). Directed self-assembly of block copolymers for next generation nanolithography. Materials Today, 16(12), pp.468-476. Stoykovich, M. and Kang, H. (2007). Directed Self-Assembly of Block Copolymers for Nanolithography: Fabrication of Isolated Features and Essential Integrated Circuit Geometries. ACS Nano, 1(3), pp.168-175.