MG CMOS Al Al SiO2 SiO2 P+ N+ N P

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Presentation transcript:

MG CMOS Al Al SiO2 SiO2 P+ N+ N P Len pre potrebu SEI a.s. (For SEI a.s. use only)

MG CMOS invertor Metal Gate CMOS Invertor Invertor je základným prvkom logických obvodov. V prípade technológie CMOS sa skladá z p a n kanálového tranzistora v komplementárnom zapojení. The invertor is a basic of logical circuits. For CMOS (Complementary MOS) technology is constructed with p and n channel devices. p n U UG USS UDD U [V] UG [V] I Al N SiO2 P+ Al P SiO2 N+ Len pre potrebu SEI a.s. (For SEI a.s. use only)

MG CMOS štruktúra MG CMOS Cross Section Si typ N á100ń - fosfor (Phosphorus) 3,5-6,5 Wcm SiO2 P-jama (P-Well) - bór (Boron) 6,5 mm, 1,1kW/o AlSi 1mm P+ 2,2 mm, 46W/o PSG 820nm N+ 1,9 mm, 24W/o Si3N4 650nm Len pre potrebu SEI a.s. (For SEI a.s. use only)

BBr3 B Len pre potrebu SEI a.s. (For SEI a.s. use only)

POCl3 P Len pre potrebu SEI a.s. (For SEI a.s. use only)

Len pre potrebu SEI a.s. (For SEI a.s. use only)