North America HB-LED Committee (High-Brightness Light-Emitting Diode)

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Presentation transcript:

North America HB-LED Committee (High-Brightness Light-Emitting Diode) Liaison Report February 2011

Outline Leadership Organization Chart Highlights from Nov 11, 2010 Kick-off Meeting Task Force Reports Highlights from Feb 23, 2011 Meeting In conjunction with Strategies in Light Upcoming Meeting Schedule February 2011 NA HB-LED Committee

Leadership Committee Co-chairs Iain Black (Philips Lumileds) HB-LED device and module producer Bill Quinn (Veeco) MOCVD System Producer Chris Moore (Semilab) HB-LED Metrology Producer Sunil Phatak (Rubicon) Sapphire Wafer Producer February 2011 NA HB-LED Committee

Current Committee Structure North America HB-LED Committee Iain Black (Philips Lumileds) Bill Quinn (Veeco) Chris Moore (Semilab) Sunil Phatak (Rubicon) HB-LED Wafer TF Sunil Phatak (Rubicon) HB-LED Factory Automation Interface TF Daniel Babbs (Brooks) Jeff Felipe (Entegris) HB-LED Assembly TF Paul Reid (Kulicke & Soffa) February 2011 NA HB-LED Committee

NA HB-LED Committee Kick-off Meeting Nov 11 in conjunction with NA Standards Fall 2010 Mtgs Attendance 18 people in person (+15 people on the phone) Companies represented include: Aixtron, AMAT, Brooks Automation, Cimetrix, Entegris, Kulicke & Soffa, Oxford Instruments, Philips, Semilab, SUMCO, Veeco Four TFs proposed Wafers, Carriers, Assembly, Automation Approved formation of the HB-LED Wafer Task Force February 2011 NA HB-LED Committee

Task Force Updates HB-LED Wafer TF Charter: Define physical geometry of wafers used in HB-LED manufacturing starting with 150 mm diameter sapphire wafers Participating companies include: OSRAM, GT Crystal Systems, SUMCO, Veeco, Silian, AIS Automation, Novellus, Kulicke & Soffa, Oxford Instruments, LayTec February 2011 NA HB-LED Committee

Task Force Updates HB-LED Wafer TF (cont’d) First TF meeting held January 10 and identified the following priorities: Wafer Fiducial (notch vs flat) Wafer ID Mark Center Point Thickness/TTV, Warp, Bow, and other “flatness” parameters Bulk Characteristic Issues Second TF meeting held January 28 Technical discussion on preliminary values for 150 mm sapphire wafers for use in HB-LED device fabrication Diameter tolerance, center point thickness, TTV, bow & warp, orientation fiducial, ID mark, surface finish, edge profile, edge finish TF developing a survey covering these topics, to be deployed in early March for input February 2011 NA HB-LED Committee

Task Force Updates HB-LED Equipment Automation Interfaces TF Formerly Carrier TF and Automation TF Motivations for combining HB-LED Factory Requirements still developing The carrier is one component of the factory automation system But, it is the interface to multiple other components Load port, storage, lot ID, etc A combined TF will benefit from having all suppliers participate in the discussion of these interfaces and their inter-dependencies. As the basic requirements unfold sub-groups will be formed for focused discussion on each component of the factory automation. February 2011 NA HB-LED Committee

Task Force Updates HB-LED Equipment Automation Interfaces TF (cont’d) Charter Define physical interfaces of substrate carriers as well as process and metrology tools of wafer/substrate carriers used in HB-LED manufacturing Participating Companies include: Brooks Automation, Entegris, OSRAM, Aixtron, Veeco, AIS Automation, Novellus, Applied Materials, MKS Instruments, Oxford Instruments, and Kulicke & Soffa. February 2011 NA HB-LED Committee

Task Force Updates HB-LED Equipment Automation Interfaces TF (cont’d) First TF meeting held January 11 and discussed the following: Developing a common vision for the future HB-LED factory depicting how each of the factory elements would interface together Including software communications as well as process carriers and transport carriers in the TF scope Identifying which existing standards can be reused and only focus on the areas which are unique to LED Deciding on terminology for each of the carrier types which exist within an HB-LED factory February 2011 NA HB-LED Committee

Task Force Updates HB-LED Assembly TF Charter Define physical and packaging attributes of die-level conductor elements as they relate to being optimized for handling and processing by common assembly and other equipment, employing automatic material handling, pattern recognition, interconnect, and assembly systems that are used in HB-LED manufacturing Participating companies include: Kulicke & Soffa, Amkor, TSMC, Silian, Veeco, Brooks Automation, Entegris February 2011 NA HB-LED Committee

Task Force Updates HB-LED Assembly TF (cont’d) First TF meeting held February 3 Reviewed Assembly Task Force TFOF Agreement on definitions and terminology Quick review of LED "Assembly" to spur some thoughts from those not in assembly A touch of LED wire bonding challenges Material handling variations, vision, wire loops Suggestions for next meeting Brainstorming/collecting inputs on directions to take Looking for lowest hanging fruit to standardize February 2011 NA HB-LED Committee

TF Meetings at Strategies in Light February 23, 2011 Meeting Schedule Wednesday, February 23 HB-LED Wafer TF (1:00 PM to 2:00 PM) HB-LED Equipment Automation TF (2:00 PM to 3:00 PM) HB-LED Assembly TF (3:30 PM to 4:30 PM, Pacific) Santa Clara Convention Center in Santa Clara, California Attendance 30 in person (+ 5 people on the phone) Companies represented (partial list): OSRAM, Philips Lumileds, GT Solar, Silian, Aixtron, Veeco, LayTec, AIS Automation, Amkor, Brooks, Entegris, Novellus , Kulicke & Soffa, EV Group, GSI, iNEMI, NeST, Oxford Instruments, PEER Group, Semilab, SUSS MicroTec, TOK February 2011 NA HB-LED Committee 13

TF Meetings at Strategies in Light February 23, 2011 HB-LED Wafer TF ID Mark Wafer: flat, notch Location: backside, wafer edge Dimensions Message Content Wafer edge profile/template Survey on HB-LED 150 mm diameter sapphire wafer characteristics Reviewed responses to date Improvements Finalize and deploy in early March (broader distribution), review results at NA Spring meetings Preliminary discussion on format/structure of SEMI draft spec February 2011 NA HB-LED Committee

TF Meetings at Strategies in Light February 23, 2011 HB-LED Equipment Automation Interfaces TF Presentations Aixtron, “Ideas to Improve HB-LED Manufacturing by Higher Automation Level” OSRAM, “Considerations for standardizing basic requirements in fab automation” LayTec, “Special requirements to communication standards with respect to in-situ data” Leveraging existing SEMI Standards (e.g., SECS/GEM, Interface A), identifying gaps To establish agreement on types of carriers used as well as terminology TF leaders to draft list of terminology then circulate for input Next TF meeting Mid-March, date TBD, via teleconference/web meeting February 2011 NA HB-LED Committee

TF Meetings at Strategies in Light February 23, 2011 HB-LED Assembly TF Reviewed Assembly TF charter and scope Agreement on definitions and terminology Review of LED assembly Scope within LED manufacturing (vs semiconductor) Wire bonding challenges Standardization challenges (variations, IP, etc.) Develop and deploy survey to collect inputs on areas that can be standardized February 2011 NA HB-LED Committee

Calendar Next meeting Fab Manager Forum (Mar 22-23) Wednesday, March 23 (16:00 – 18:00) Berlin, Germany NA Standards Spring 2011 Meetings (Mar 28-31) Thursday, March 31 Committee and TF meetings, schedule to be finalized SEMI Headquarters in San Jose, California http://www.semi.org/en/Standards/ctr_042107 February 2011 NA HB-LED Committee 17

Thank You! For more information or participate in any NA HB-LED activities, please contact Paul Trio at SEMI (ptrio@semi.org) February 2011 NA HB-LED Committee

Backup February 2011 NA HB-LED Committee

Charter for Global and NA HB-LED Standards Committee To explore, evaluate, discuss, and create consensus-based specifications, guidelines, and practices that, through voluntary compliance, will; promote mutual understanding and improved communication between users and suppliers of HB-LED materials, carriers, automation systems and devices, and enhance the manufacturing efficiency and capability and shorten time-to-market so as to reduce manufacturing cost in the HB-LED industry. February 2011 NA HB-LED Committee

Scope for Global and NA HB-LED Committee To include liaisons and synergies with other SEMI technical committees for the development of HB-LED-related standards. The HB-LED standards committee scope is limited to exploring and developing standards that pertain to common criteria, guidelines, methods for control and comparison of HB-LED-related materials, carriers and automation systems. It will seek to support the international need for increasing HB-LED product / process yield and reducing related HB-LED costs per Lumen. In addition to the above, the committee will also facilitate any industry initiatives towards product standardization needs. February 2011 NA HB-LED Committee

Timeline HB-LED Steering Committee Agreement to form HB-LED Standards Committee Agreed – Sept 23, 2010 NARSC Endorsement of Petition Completed – Oct 15, 2010 ISC Approval of Petition Completed – Nov 4, 2010 First NA HB-LED Standards Committee Meeting Completed – Nov 11, 2010 (in San Jose) February 2011 NA HB-LED Committee

SDO’s in HB-LED Product Performance and Measurement Standards Material, Manufacturing and Processing Standards While several SDOs are working on product performance and measurement standards, no SDOs are active in SEMI's area core competency: Manufacturing standards for materials, equipment, and automation February 2011 NA HB-LED Committee