Hamdy Abd El-Hamida, Benjamin Iñigueza, Jaume Roigb

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Presentation transcript:

Hamdy Abd El-Hamida, Benjamin Iñigueza, Jaume Roigb Analytical Predictive Modeling for the Scalability Study of DG and GAA MOSFETs Hamdy Abd El-Hamida, Benjamin Iñigueza, Jaume Roigb a Dept. d’Enginyeria Electrònica, Elèctrica i Automàtica, Universitat Rovira i Virgili, 43007 Tarragona, Spain. E-mail: hamdy@abd.cat bLAAS, CNRS, 31007 Toulouse Cedex 4, France

Modeling Summary We have developed analytical scalable models of the threshold voltage roll-off, DIBL and subthreshold swing of nanoscale Gate All Around (GAA) and Double-Gate (DG) MOSFETs The models are derived from an analytical solution of the 2D or 3D Poisson’s equation, obtained using variable separation Very good agreement with numerical 2D and 3D simulations have been observed

Modeling Applications The models have been used to compare the performance of nanoscale GAA and DG MOSFETs We have determined the dimensions of the devices necessary to obtain a certain value of the subthreshold swing It results that the GAA device can be 33% shorter than the DG MOSFET, and with a 10 mV/V lower DIBL