Progress of ALD Group for MCP

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Presentation transcript:

Progress of ALD Group for MCP Qing Peng, Anil U. Mane, Jeffery W. Elam Argonne National Laboratory Third week of September 2009

Aluminum doped Zinc Oxide (AZO) growth rate at different conditions 20% ALO cycle Diethyl Zinc Trimethyl Aluminum Results: At 200C, with O3 chemistry AZO growth rate is smaller than the growth rate with H2O chemistry for same cycle conditions. For H2O chemistry, AZO growth rate is smaller at 200C than at 177C

Results of AZO coated MCP Purpose: ALD2 system, coat AZO onto MCP with Si wafers as the control sample. Conditions Reaction temperature: 177C Substrate: Silicon with unknown resistivity, treated by Acetone/IPA, Then O3 for ~3 minutes. MCP treated with O3 for ~3 minutes Cycle conditions (dose/purge/dose/purge): 1/5/1/5 s for both Al2O3 and ZnO, Cycle Numbers: 800 Cycles Reactants: TMA/H2O for Al2O3, DEZ/H2O for ZnO. Substrates: MCP 33 in diameter, IPN: 300-2592-A, polished AND Si wafers with unknown resistivity Uncoated MCP MCP 100nm AZO MCP+100nm AZO+Cr 5nm+Au 50nm

Work has been done: ALD process for AZO is carrying out, Mercury probe and pico-ammeter for resistant measurement set up Low resistivity Si wafer ordered Sample holder for electrode coating is designed. Mercury probe and Pico-ammeter is set up for measuring high resistant Work for near future: Systematic study of ALD process for AZO for the optimal material property. Automatic measuring system for resistance