Processes Using Matrix-Isolation Spectroscopy Investigation of Species Related to Silicon Nitride Chemical Vapor Deposition Processes Using Matrix-Isolation Spectroscopy Jay C. Amicangelo, School of Science, Penn State Erie, The Behrend College Matrix-isolation infrared spectroscopy is used to characterize transient species that may be related to silicon nitride (Si3N4) chemical vapor deposition processes. We have chosen to focus on the intermediates involved in the reaction of SiH4 with NH3 (shown below) and SiH4 with N2. 3SiH4 + 4NH3 → ???? → Si3N4 + 12H2 In the general scheme of this project, three generation sources will be used to obtain the transient species: microwave discharge , vacuum-ultraviolet photolysis, and pyrolysis. These sources mirror those used in chemical vapor deposition processes. The initial experiments have been performed on mixtures of SiH4 with N2 at 12 K using a hydrogen resonance lamp photolysis source (121 nm) and a microwave discharge source (2.45 GHz). Using the hydrogen lamp, the transient species observed are Si-N2, Si-(N2)2, HSi-N2, H2Si-N2, Si2H2, and Si2H4. The observation of the HSi-N2 and H2Si-N2 transient species (shown below) are the most significant results from this experiment. Using the microwave discharge, the primary transient species observed are NH, NH2, N3, N3-, Si-N2, and HSi-N2. The next goals in the project are to examine the transient species formed with SiH4 and NH3 mixtures in nitrogen and argon using the microwave discharge and hydrogen lamp sources. As well, we have begun to build the pyrolysis source. HSi-N2 H2Si-N2