Charge measurement of STK

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Presentation transcript:

Charge measurement of STK 2016-04-27

DAMPE-STK Readout by VA140, a updated version of VA-hdr9a

STK-Ion beam test Linear dynamic range: 50MIPs

STK-Ion beam test Linear dynamic range: 100MIPs

AMS-Silicon tracker The junction side (or S-side, p side) strips have an implementation pitch of 27.5 μm and a readout pitch of 110 μm. The ohmic side (or K-side , n-side) strips have an implementation pitch of 104 μm and a read-out pitch of 208 μm. These read-out strips of the K- and S-sides are separately connected in different daisy-chains to front-end hybrid circuits. There are 640 read-out channels for the S-side and 384 read-out channels for the K side. The front-end hybrid design is based on the VA-hdr9a readout chip

AMS-Silicon tracker

Comparison between two ASICs