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Presentation transcript:

Jagdish (Jay) Narayan John Fan Family Distinguished Chair Professor North Carolina State University Primary Research Interest: Vanadium Oxide based Thin Film Heterostructures integrated with silicon and sapphire substrates Primary Broader Impact Activity: Work with Oak Ridge National Lab, NC A&T and Kopin Corporation Interests in New Collaborations: Novel defect characterization and property measurements and fabrication of new device structures heating and (b) cooling cycles. The insets show the change of peak intensities as a function of temperature Results of high temperature high resolution θ-2θ XRD performed on epitaxial VO2 thin films grown on an NiO/MgO/TiN/Si(100) platform are depicted in Fig. 6. The results show that the (011) planes of monoclinic (M1) VO2 change to the (110) planes of tetragonal VO2 across the SMT. The (110) and (011) intensities from tetragonal and monoclinic VO2 crystals appear at 2θ angles of about 27.72o and 27.90o, respectively. These values are slightly higher than the 2θ values of bulk (relaxed) VO2 showing that the crystals are under a compressive strain along their out-of-plane directions. Based on the established epitaxial relationship, [1 1 0] orientation of tetragonal VO2 is parallel to [001] orientation of NiO at the temperature of growth. Along the [1 1 0] orientation of tetragonal VO2, there are two sets of oxygen anions with an alternating distances of about 2.44 Å and 3.99 Å. These atoms couple with nickel cations, having a spacing of about 4.176 Å, along the [100] orientation of NiO. This results in a small tensile misfit strain of about 4.45%. Such a small strain is very hard to relax.