Software description cosma pulse

COSMA Pulse is a control software that broadens conventional tools’ process capabilities to enable time-multiplexed processes

Cost effective upgrade Cosma pulse benefits 11/22/2018 Advanced Process Control Enhanced functionality ALL PARAMETERS CAN BE CONTROLLED AND PULSED Short step times 10 ms DATA AQUISITION Cost effective upgrade FOR CORIAL SYSTEMS INSTALLED AT CUSTOMERS’ SITES Advanced process editing SET TO, RAMP TO AND PULSE FUNCTIONS +/-0,1% ACCURACY ON BIAS FINE TUNING COSMA Pulse

Process editing 11/22/2018 Intelligent process control, using not only the standard “SET to” and RAMP to” functions, but also an added “PULSE” function Control and Pulse of any process parameter (such as gas flow rate, RF and ICP power, working pressure, etc.), with a minimum pulsing period of 10 milliseconds Edit, store, use, and duplicate process recipes with the COSMA Pulse unique user interface COSMA Pulse

Process editing Details of the pulsed parameter setting 11/22/2018 Show/close all the details of the pulsed parameters Show the pulsed parameters Mode: Pulsed Details of the pulsed parameter setting COSMA Pulse

Process adjustment 11/22/2018 All process parameters can be pulsed and adjusted during process execution Details of the pulsed parameter setting Real-time process adjustment COSMA Pulse

Multiple user access rights Process OPERATIOn 11/22/2018 Multiple user access rights PASSWORD CONTROLLED LOGIN WITH DIFFERENT LEVELS OF USER ACCESS Real time process data display ALL PROCESS PARAMTERS CAN BE MONITORED SIMULTANEOUSLY IN REAL TIME DURING PROCESS EXECUTION Process reproducibility TIGHT CONTROL AND MONITORING OF PROCESS STEPS Multistep recipes LOOPS WITH AUTOMATED TRANSITION TO THE NEXT PROCESS STEP BASED ON SIGNALS FROM END POINT DETECTORS COSMA Pulse

Cosma pulse application #1 DRIE

To alternate between each step, Drie of silicon 11/22/2018 Process Steps CORIAL Bosch-like process has 3 steps step 1 - Polymer deposition by C4F8 plasma step 2 - Polymer etching  by SF6 plasma step 3 - Silicon etching with 20W of RF power, which was used to increase the silicon etching rate To alternate between each step, COSMA pulse software is required for pulsing consecutively C4F8 gas flow, SF6 gas flow, LF and RF power COSMA Pulse

Drie of silicon 11/22/2018 Advantages Precise control of the etch profile, fast etch rates, and excellent etch uniformity COSMA Pulse

Results obtained with 100 mm wafer, 20% Si open area Drie of silicon 11/22/2018 Performances Feature size (µm) Etched depth Aspect ratio Etch rate (µm/min) Mask Selectivity (vs. mask) Ø250 Through wafer 1:2 > 3.0 SiO2 330 Ø100 515 1:5 > 2.9 PR 85 Ø20 280 1:14 > 1.5 155 Ø5 180 1:35 > 1.0 100 Results obtained with 100 mm wafer, 20% Si open area COSMA Pulse

Cosma pulse application #2 atomic scale etching

Atomic scale process reminder 11/22/2018 Process Steps Adsorption step Formation of reactive monolayer Purge step Evacuation of the excess adsorbent species Desorption step Exposure of the reactive monolayer to form volatile species Cleaning the reactor of all species KEREN J. KANARIK et. al., Moving atomic layer etch from lab to fab, Solid State Technology 2014 Applications of Atomic Scale Etching Power and RF&MW electronics R&D, nanotechnology nm-scale IC technology… COSMA Pulse

Atomic scale etching of silicon 11/22/2018 Process Steps Advanced tuning of RF pulsing (red) to control ion energy Independent and rapid pulsing of chlorine (blue) and argon (green) flows during adsorption and desorption steps The laser signal shows an etch rate of 1.68 Å/cycle COSMA Pulse

Atomic scale etching of silicon 11/22/2018 Performances Si wafer before etching Roughness = 0.188 nm Si wafer after etching of 0.5 µm Roughness = 0.277 nm COSMA Pulse

Atomic scale etching of gan 11/22/2018 Process Steps CORIAL process steps for GaN recess etch Process steps RF Power (W) Pressure (mT) Chemistry Pulsed parameters Step 1 - Adsorption 10 25 Cl2 Ar Chlorine Step 2 - Purge Step 3 - Desorption 100 RF power Weak RF plasma activation of Cl2 is used to enhance chlorination of GaN surface Desorption of by-products is achieved in RIE mode by Ar+ COSMA Pulse

CORIAL process steps for GaN recess etch Atomic scale etching of gan 11/22/2018 Process Steps CORIAL process steps for GaN recess etch COSMA Pulse

Atomic scale etching of gan 11/22/2018 Performances 2’’ Sapphire wafer AlxGa1-xN / AlxGa1-xN <Si> / AlN stack GaN 50 A 1.2 µm Recess etch CORIAL process performances Process Total process duration (min) Number of cycles Period (s) Etch depth (Å) Etch rate (Å/cycle) (Å/min) ALE GaN recess etch 20 300 6 50 0.4 4 COSMA Pulse

Atomic scale etching of gan 11/22/2018 Performances HEMT Transistor performances before (left curves) and after recess etching (right curves) Higher transconductance is obtained No deterioration of the drain current is obtained after ALE-like recess etching COSMA Pulse

Cosma pulse application #3 time-multiplexed deposition

Time-multiplexed deposition of sio2 11/22/2018 Process Steps Precursor a-Si deposition Purge N2O plasma oxidation 4-step process step 1 – a-Si deposition by SiH4/Ar chemistry step 2 - Purge step 3 – a-Si oxidation by N2O step 4 – Purge COSMA Pulse

Time-multiplexed deposition of sio2 11/22/2018 Process Steps a-Si deposition 2.5s Period 10s N2O oxidation 5.5s Time (s) 2,5 3,5 9 10 Purge 1s RF N2O SiH4 0,1 3 500 1000 Parameter: SiH4 Mode: Pulsed Value 1: 3 Value 2: 0,1 Period: 10 000 ms Cycle: 25% Delay: 0 ms Parameter: Ar Mode: Pulsed Value 1: 500 Value 2: 1000 Period: 10 000 ms Cycle: 55% Delay: 3 500 ms Purge 1s Ar Parameter: N2O Mode: Pulsed Value 1: 500 Value 2: 0,1 Period: 10 000 ms Cycle: 55% Delay: 3 500 ms Parameter: RF Mode: Pulsed Value 1: 100 Value 2: 50 Period: 10 000 ms Cycle: 55% Delay: 3 500 ms 100 50 COSMA Pulse

Time-multiplexed deposition of sio2 11/22/2018 Performances Process steps RF Power (W) Ar (sccm) N2O SiH4 Time (s) Deposition rate (Å/cycle) (nm/min) R.I. Uniformity on 4” (±%) Stress (Mpa) Step 1 - Precursor 50 1000 0.1 3 2,5 7 4,2 1,465 0,7 -227 Step 2 - Purge 0,1 1 Step 3 - Oxidation 100 500 5,5 Step 4 - Purge COSMA Pulse