ECE 658: Semiconductor Material and Device Characterization Peide (Peter) Ye Office: Birck 1291 E-mail: yep@purdue.edu Tel: 494-7611 Course website: http://cobweb.ecn.purdue.edu /~yep/courses.htm Location: EE 226 Time: MWF 8:30-9:20 am Office Hour: 10:00am-noon MWF

Fundamentals State-of-the-art Course Description: An examination of modern characterization techniques routinely employed to determine semiconductor material and device parameters. Concepts and theory underlying the techniques are reviewed, and sample experimental results are presented. Emphasis is on techniques employing electrical measurements. Course Objectives: This course is intended for graduate students in MN and  related areas who are either i) interested in pursuing research in semiconductor materials, structures or devices, or ii) seeking the broad device background on the-state-of-the-art technologies for a future R&D career in the microelectronic industry.  Fundamentals State-of-the-art

Teaching Philosophy for ECE 658 Motto “Durch Messung zu Wissen”(German) “During or through measurement to understand” (English) The best way to learn ECE 658 is to measure the devices in the lab and understand what you are measuring. 4 lectures + 2 hours (lab or discussion sessions) every two weeks

Required Textbook: $65 at Amazon

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(1)Resistivity (2)Carrier/Doping Density (3) Rc and Schottky Barries (4) Rs,Lg,VT (5) Defects (6) Oxide integrity (7) Carrier lifetime (8) Mobility

Course Grading Final Exam : 100% Home work / attendance/ literature research / discussion: determining the final grade in borderline cases

yep/ From 612--Prof. M.Lundstrom

Lecture 1: Resistivity metal semiconductor easy Insulator DOS Mobility

Lecture 1: Resistivity 1.1 Introduction DOS Mobility

Lecture 1: Resistivity 1.2 The Four-Point Probe Big difference: two point and four point measurements

Big difference

Homework: Reading relevant pages For an arbitrarily shaped sample, What decides F, next Lecture Homework: Reading relevant pages