Halliday/Resnick/Walker Fundamentals of Physics 8th edition Classroom Response System Questions Chapter 41 Conduction of Electricity in Solids Reading Quiz Questions

41.2.1. How are atoms in a crystalline solid arranged? a) in a manner that results in the solid being transparent b) in a pattern that results in the lowest energy state c) in a repetitive three-dimensional structure d) on a lattice in which all of the magnetic spins are aligned e) randomly

41.2.1. How are atoms in a crystalline solid arranged? a) in a manner that results in the solid being transparent b) in a pattern that results in the lowest energy state c) in a repetitive three-dimensional structure d) on a lattice in which all of the magnetic spins are aligned e) randomly

41.2.2. Which of the following basic properties is not used to classify solids electrically? a) temperature coefficient of resistivity b) coefficient of restitution c) resistivity d) number density of charge carriers e) All of the above properties are used to classify solids electrically.

41.2.2. Which of the following basic properties is not used to classify solids electrically? a) temperature coefficient of resistivity b) coefficient of restitution c) resistivity d) number density of charge carriers e) All of the above properties are used to classify solids electrically.

41.2.3. Which of the following best describes the arrangement of atoms in a copper crystal? a) spherical b) cubic c) disordered d) one-dimensional e) Copper is a metal. It is not a crystal.

41.2.3. Which of the following best describes the arrangement of atoms in a copper crystal? a) spherical b) cubic c) disordered d) one-dimensional e) Copper is a metal. It is not a crystal.

41.3.1. In the discussion of the electrical properties of solid materials, what is a band? a) a collection of closely-spaced energy levels b) a linear defect in the lattice of the solid c) the paths electrons follow when moving in the solid d) lines of atoms in the lattice of the solid e) the class of electrical materials the solid falls into, such as metal, semiconductor, etc.

41.3.1. In the discussion of the electrical properties of solid materials, what is a band? a) a collection of closely-spaced energy levels b) a linear defect in the lattice of the solid c) the paths electrons follow when moving in the solid d) lines of atoms in the lattice of the solid e) the class of electrical materials the solid falls into, such as metal, semiconductor, etc.

41.3.2. Two nickel atoms, each containing 28 electrons, are brought close enough together to form a two-atom system. How many quantum states are available to electrons in this system? a) 40 b) 28 c) 14 d) 56 e) 2

41.3.2. Two nickel atoms, each containing 28 electrons, are brought close enough together to form a two-atom system. How many quantum states are available to electrons in this system? a) 40 b) 28 c) 14 d) 56 e) 2

41.3.3. In crystalline solids, there are bands of energy in which there are available states for electrons to occupy. What do we call the range of energies in between these bands for which there are no available states? a) illegal states b) breaches c) skips d) pauses e) gaps

41.3.3. In crystalline solids, there are bands of energy in which there are available states for electrons to occupy. What do we call the range of energies in between these bands for which there are no available states? a) illegal states b) breaches c) skips d) pauses e) gaps

41.4.1. Complete the following sentence: an electric insulator has a) the ability to easily conduct electricity, but does not easily conduct heat. b) few electrons available to conduct electricity. c) the ability to easily conduct electricity and heat. d) no ability to conduct electricity. e) many free electrons available to conduct electricity.

41.4.1. Complete the following sentence: an electric insulator has a) the ability to easily conduct electricity, but does not easily conduct heat. b) few electrons available to conduct electricity. c) the ability to easily conduct electricity and heat. d) no ability to conduct electricity. e) many free electrons available to conduct electricity.

41.4.2. Which of the following terms is used to describe a material that does not allow electrons to easily move through it? a) conductor b) resistor c) insulator d) transformer e) inductor

41.4.2. Which of the following terms is used to describe a material that does not allow electrons to easily move through it? a) conductor b) resistor c) insulator d) transformer e) inductor

41.5.1. What is the Fermi energy? a) 13.1 eV b) the width of the largest band in the solid c) the energy needed to initiate a current in a metal d) the average total energy of the electrons within the solid e) the highest occupied energy level of a solid when its at absolute zero

41.5.1. What is the Fermi energy? a) 13.1 eV b) the width of the largest band in the solid c) the energy needed to initiate a current in a metal d) the average total energy of the electrons within the solid e) the highest occupied energy level of a solid when its at absolute zero

41.5.2. Which one of the following statements concerning electrical conductors is false? a) Rubber is an excellent electrical conductor. b) A material that is a good electrical conductor has many free electrons that can easily move around inside the material. c) When a positively-charged object is moved into contact with an electrical conductor, electrons move toward the object. d) Materials that are good thermal conductors are often good electrical conductors. e) Most metals are very good electrical conductors.

41.5.2. Which one of the following statements concerning electrical conductors is false? a) Rubber is an excellent electrical conductor. b) A material that is a good electrical conductor has many free electrons that can easily move around inside the material. c) When a positively-charged object is moved into contact with an electrical conductor, electrons move toward the object. d) Materials that are good thermal conductors are often good electrical conductors. e) Most metals are very good electrical conductors.

41.5.3. What is the name of the microscopic model that may be used to understand why some materials are metals? a) comprehensive model b) Maxwell-Boltzmann model c) standard model d) Anderson model e) free-electron model

41.5.3. What is the name of the microscopic model that may be used to understand why some materials are metals? a) comprehensive model b) Maxwell-Boltzmann model c) standard model d) Anderson model e) free-electron model

41.5.4. To determine how many states in a given volume have energies between E and E + dE, we calculate N(E) dE. What is the name given to N(E)? a) energy density b) system quantifier c) density of states d) electron density function e) Maxwell-Boltzmann function

41.5.4. To determine how many states in a given volume have energies between E and E + dE, we calculate N(E) dE. What is the name given to N(E)? a) energy density b) system quantifier c) density of states d) electron density function e) Maxwell-Boltzmann function

41.5.5. If we wish to calculate the occupancy probability for electrons in metals, what type of statistics would we use? a) Bose - Einstein b) Fermi - Dirac c) Stern - Gerlach d) Gell-Mann - Feynman e) Abrikosov

41.5.5. If we wish to calculate the occupancy probability for electrons in metals, what type of statistics would we use? a) Fermi - Dirac b) Bose - Einstein c) Stern - Gerlach d) Gell-Mann - Feynman e) Abrikosov

41.5.6. At absolute zero, electrons occupy energy levels up to a certain energy. Which famous physicist is this energy named after? a) Feynman b) Bohr c) Maxwell d) Einstein e) Fermi

41.5.6. At absolute zero, electrons occupy energy levels up to a certain energy. Which famous physicist is this energy named after? a) Feynman b) Bohr c) Maxwell d) Einstein e) Fermi

41.6.1. The band structure of a semiconductor most closely resembles that of which of the following choices? a) superconductor b) insulator c) Einstein solid d) quantum dot e) metal

41.6.1. The band structure of a semiconductor most closely resembles that of which of the following choices? a) superconductor b) insulator c) Einstein solid d) quantum dot e) metal

41.6.2. Of the many parameters we come across in physics, resistivity is one which shows one of the largest variations, depending on the materials. The text indicates that the resistivity of copper is a very large factor smaller than that for silicon. What is that factor? a) 108 b) 1011 c) 1015 d) 1020 e) 1027

41.6.2. Of the many parameters we come across in physics, resistivity is one which shows one of the largest variations, depending on the materials. The text indicates that the resistivity of copper is a very large factor smaller than that for silicon. What is that factor? a) 108 b) 1011 c) 1015 d) 1020 e) 1027

41.7.1. Which of the following statements best describes an n-type semiconductor? a) An n-type semiconductor is one in its natural, undoped state. b) An n-type semiconductor has more holes in the conduction band than in its valence band. c) An n-type semiconductor has more electrons in the conduction band than holes in its valence band. d) An n-type semiconductor has more electrons in the valence band than in its conduction band. e) An n-type semiconductor has more holes in the valence band than electrons in its conduction band.

41.7.1. Which of the following statements best describes an n-type semiconductor? a) An n-type semiconductor is one in its natural, undoped state. b) An n-type semiconductor has more holes in the conduction band than in its valence band. c) An n-type semiconductor has more electrons in the conduction band than holes in its valence band. d) An n-type semiconductor has more electrons in the valence band than in its conduction band. e) An n-type semiconductor has more holes in the valence band than electrons in its conduction band.

41.7.2. Which of the following statements best describes a p-type semiconductor? a) A p-type semiconductor is one in its pure, undoped state. b) A p-type semiconductor has more holes in the conduction band than in its valence band. c) A p-type semiconductor has more electrons in the conduction band than holes in its valence band. d) A p-type semiconductor has more electrons in the valence band than in its conduction band. e) A p-type semiconductor has more holes in the valence band than electrons in its conduction band.

41.7.2. Which of the following statements best describes a p-type semiconductor? a) A p-type semiconductor is one in its pure, undoped state. b) A p-type semiconductor has more holes in the conduction band than in its valence band. c) A p-type semiconductor has more electrons in the conduction band than holes in its valence band. d) A p-type semiconductor has more electrons in the valence band than in its conduction band. e) A p-type semiconductor has more holes in the valence band than electrons in its conduction band.

41.7.3. What is the process of adding impurity atoms to a semiconducting material called? a) flopping b) charging c) doping d) whipping e) amplifying

41.7.3. What is the process of adding impurity atoms to a semiconducting material called? a) flopping b) charging c) doping d) whipping e) amplifying

41.7.4. What type of semiconductor is made by adding impurity atoms that contribute mobile electrons? a) a-type b) f-type c) m-type d) n-type e) p-type

41.7.4. What type of semiconductor is made by adding impurity atoms that contribute mobile electrons? a) a-type b) f-type c) m-type d) n-type e) p-type

41.7.5. What type of semiconductor is made by adding impurity atoms that contribute mobile positive holes? a) a-type b) f-type c) m-type d) n-type e) p-type

41.7.5. What type of semiconductor is made by adding impurity atoms that contribute mobile positive holes? a) a-type b) f-type c) m-type d) n-type e) p-type

41.8.1. What is the name given to the part of a pn-junction that is relatively free of mobile charge carriers? a) space charge region b) depletion zone c) diffusion locality d) singularity e) neutral zone

41.8.1. What is the name given to the part of a pn-junction that is relatively free of mobile charge carriers? a) space charge region b) depletion zone c) diffusion locality d) singularity e) neutral zone

41. 9. 1. Consider a pn-junction that is forward biased 41.9.1. Consider a pn-junction that is forward biased. What effect, if any, does the forward bias have on the potential barrier between the two sides of the junction? a) The barrier increases. b) The barrier decreases, but is still present. c) The barrier remains unchanged. d) The barrier disappears. e) The barrier causes the side that was n-type to become p-type and the side that was ­p­-type to become n-type, effectively reversing the polarity of the junction.

41. 9. 1. Consider a pn-junction that is forward biased 41.9.1. Consider a pn-junction that is forward biased. What effect, if any, does the forward bias have on the potential barrier between the two sides of the junction? a) The barrier increases. b) The barrier decreases, but is still present. c) The barrier remains unchanged. d) The barrier disappears. e) The barrier causes the side that was n-type to become p-type and the side that was ­p­-type to become n-type, effectively reversing the polarity of the junction.

41.9.2. Which of the following terms is used to describe a ­pn-junction in which the p-side becomes more negative and the n-side becomes more positive? a) forward-biased b) doped c) rectified d) back-biased e) rarefied

41.9.2. Which of the following terms is used to describe a ­pn-junction in which the p-side becomes more negative and the n-side becomes more positive? a) forward-biased b) doped c) rectified d) back-biased e) rarefied

41. 9. 3. Consider a pn-junction that is back biased 41.9.3. Consider a pn-junction that is back biased. What effect, if any, does the back bias have on the potential barrier between the two sides of the junction? a) The barrier increases. b) The barrier decreases, but is still present. c) The barrier remains unchanged. d) The barrier disappears. e) The barrier causes the side that was n-type to become p-type and the side that was ­p­-type to become n-type, effectively reversing the polarity of the junction.

41. 9. 3. Consider a pn-junction that is back biased 41.9.3. Consider a pn-junction that is back biased. What effect, if any, does the back bias have on the potential barrier between the two sides of the junction? a) The barrier increases. b) The barrier decreases, but is still present. c) The barrier remains unchanged. d) The barrier disappears. e) The barrier causes the side that was n-type to become p-type and the side that was ­p­-type to become n-type, effectively reversing the polarity of the junction.

41.9.4. Which one of the following devices converts an ac voltage signal into a dc voltage? a) solar cell b) transistor c) rectifier circuit d) generator e) heterodyne detector

41.9.4. Which one of the following devices converts an ac voltage signal into a dc voltage? a) solar cell b) transistor c) rectifier circuit d) generator e) heterodyne detector

41.10.1. Many familiar electronic devices have LEDs. What is an LED? a) lossless electron device b) leading edge director c) light electron dosimeter d) light emitting diode e) long electronic disruptor

41.10.1. Many familiar electronic devices have LEDs. What is an LED? a) lossless electron device b) leading edge director c) light electron dosimeter d) light emitting diode e) long electronic disruptor

41.4.1. In one crystalline material, the energy bands are completely filled up to the top of one band. The bands above it are completely empty. What type of crystalline solid is this? a) metal b) insulator c) semiconductor d) More information is needed to answer this question.

41.4.1. In one crystalline material, the energy bands are completely filled up to the top of one band. The bands above it are completely empty. What type of crystalline solid is this? a) metal b) insulator c) semiconductor d) More information is needed to answer this question.

41.5.2. Determine how many conduction electrons there are in a sample of pure sodium occupying 1.0 × 105 m3. Each sodium atom contributes one electron. a) 7.9 × 1022 b) 2.5 × 1023 c) 4.2 × 1023 d) 6.4 × 1023 e) 1.0 × 1024

41.5.2. Determine how many conduction electrons there are in a sample of pure sodium occupying 1.0 × 105 m3. Each sodium atom contributes one electron. a) 7.9 × 1022 b) 2.5 × 1023 c) 4.2 × 1023 d) 6.4 × 1023 e) 1.0 × 1024

41.6.1. Which of the following features is the main difference between insulators and semiconductors? a) The energy gap between the conduction band and the valence band is larger for insulators. b) The energy gap between the conduction band and the valence band is smaller for insulators. c) The width of the valence band is larger for semiconductors. d) The width of the conduction band is larger for semiconductors. e) The width of the conduction band is smaller for semiconductors.

41.6.1. Which of the following features is the main difference between insulators and semiconductors? a) The energy gap between the conduction band and the valence band is larger for insulators. b) The energy gap between the conduction band and the valence band is smaller for insulators. c) The width of the valence band is larger for semiconductors. d) The width of the conduction band is larger for semiconductors. e) The width of the conduction band is smaller for semiconductors.

41.7.1. Which one of the following materials would be in an n-type semiconductor? a) germanium doped with boron b) germanium doped with gallium c) silicon doped with phosphorus d) silicon doped with gallium e) silicon doped with boron

41.7.1. Which one of the following materials would be in an n-type semiconductor? a) germanium doped with boron b) germanium doped with gallium c) silicon doped with phosphorus d) silicon doped with gallium e) silicon doped with boron

41.7.2. Which one of the following materials would be in a p-type semiconductor? a) germanium doped with antimony b) germanium doped with arsenic c) silicon doped with phosphorus d) silicon doped with arsenic e) silicon doped with boron

41.7.2. Which one of the following materials would be in a p-type semiconductor? a) germanium doped with antimony b) germanium doped with arsenic c) silicon doped with phosphorus d) silicon doped with arsenic e) silicon doped with boron

41.8.1. A junction is formed that consists of n type semiconducting material on the left and p type semiconducting material on the right. What is the direction of the electric field for this pn-junction, if any? a) If the junction is not connected to a battery, there will be no electric field. b) The direction is from left to right. c) The direction is from right to left. d) There is no electric field because of the presence of the depletion zone.

41.8.1. A junction is formed that consists of n type semiconducting material on the left and p type semiconducting material on the right. What is the direction of the electric field for this pn-junction, if any? a) If the junction is not connected to a battery, there will be no electric field. b) The direction is from left to right. c) The direction is from right to left. d) There is no electric field because of the presence of the depletion zone.

41.8.2. Does a pn-junction obey Ohm’s law when it is forward-biased? a) No, the current does not increase linearly with voltage for all voltages. b) Yes, the current does increase linearly with voltage for all voltages. c) Yes, the current does increase linearly for small voltages. d) Yes, the current does increase linearly for high voltages.

41.8.2. Does a pn-junction obey Ohm’s law when it is forward-biased? a) No, the current does not increase linearly with voltage for all voltages. b) Yes, the current does increase linearly with voltage for all voltages. c) Yes, the current does increase linearly for small voltages. d) Yes, the current does increase linearly for high voltages.

41.9.1. When a pn-junction is forward biased, which of the following occurs? a) Both the p side and the n side become more positive. b) The p side becomes more negative and the n side becomes more positive. c) Both the p side and the n side become more negative. d) The p side becomes more positive and the n side becomes more negative.

41.9.1. When a pn-junction is forward biased, which of the following occurs? a) Both the p side and the n side become more positive. b) The p side becomes more negative and the n side becomes more positive. c) Both the p side and the n side become more negative. d) The p side becomes more positive and the n side becomes more negative.

41.9.2. Which of the following occurs when a pn-junction is back biased? a) Both the p side and the n side become more positive. b) The p side becomes more negative and the n side becomes more positive. c) Both the p side and the n side become more negative. d) The p side becomes more positive and the n side becomes more negative.

41.9.2. Which of the following occurs when a pn-junction is back biased? a) Both the p side and the n side become more positive. b) The p side becomes more negative and the n side becomes more positive. c) Both the p side and the n side become more negative. d) The p side becomes more positive and the n side becomes more negative.

41.9.3. What effect does reducing the width of the depletion zone have on the electrical resistance of a pn-junction that is forward biased? a) The resistance is reduced. b) The resistance is increased. c) There is no effect on the resistance. d) The resistance goes to zero ohms. e) The resistance becomes infinitely large.

41.9.3. What effect does reducing the width of the depletion zone have on the electrical resistance of a pn-junction that is forward biased? a) The resistance is reduced. b) The resistance is increased. c) There is no effect on the resistance. d) The resistance goes to zero ohms. e) The resistance becomes infinitely large.

41.9.4. What effect does increasing the width of the depletion zone have on the electrical resistance of a pn-junction that is back biased? a) The resistance is reduced. b) The resistance is increased. c) There is no effect on the resistance. d) The resistance goes to zero ohms. e) The resistance becomes infinitely large.

41.9.4. What effect does increasing the width of the depletion zone have on the electrical resistance of a pn-junction that is back biased? a) The resistance is reduced. b) The resistance is increased. c) There is no effect on the resistance. d) The resistance goes to zero ohms. e) The resistance becomes infinitely large.

41. 10. 1. One type of diode is called a zener diode 41.10.1. One type of diode is called a zener diode. When the diode is forward biased, the zener diode behaves as a normal diode does, but when it is reverse biased, there is a small leakage current that passes through the diode. This leakage current remains essentially constant as the bias voltage increases until a critical voltage is reached where the leakage current increases rapidly. Consider the circuit shown. What is the behavior of the output voltage between points A and B in this circuit as the amplitude of the reverse bias voltage is increased? a) The output voltage is zero volts until the critical voltage is reached, after which the output voltage will slowly increase. b) The output voltage is zero volts until the critical voltage is reached, after which the output voltage will be nearly constant. c) The output voltage is equal to a non-zero voltage until the critical voltage is reached, after which the output voltage will be equal to zero volts. d) The output voltage will slowly increase until the critical voltage is reached, after which the output voltage will be equal to zero volts. e) The output voltage will slowly increase until the critical voltage is reached, after which the output voltage will be nearly constant.

41. 10. 1. One type of diode is called a zener diode 41.10.1. One type of diode is called a zener diode. When the diode is forward biased, the zener diode behaves as a normal diode does, but when it is reverse biased, there is a small leakage current that passes through the diode. This leakage current remains essentially constant as the bias voltage increases until a critical voltage is reached where the leakage current increases rapidly. Consider the circuit shown. What is the behavior of the output voltage between points A and B in this circuit as the amplitude of the reverse bias voltage is increased? a) The output voltage is zero volts until the critical voltage is reached, after which the output voltage will slowly increase. b) The output voltage is zero volts until the critical voltage is reached, after which the output voltage will be nearly constant. c) The output voltage is equal to a non-zero voltage until the critical voltage is reached, after which the output voltage will be equal to zero volts. d) The output voltage will slowly increase until the critical voltage is reached, after which the output voltage will be equal to zero volts. e) The output voltage will slowly increase until the critical voltage is reached, after which the output voltage will be nearly constant.