Memory Devices on DE2-115 Digital Circuit Lab TA: Po-Chen Wu.

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Presentation transcript:

Memory Devices on DE2-115 Digital Circuit Lab TA: Po-Chen Wu

Outline SRAM SDRAM FLASH EEPROM SD Card

SRAM

Features 16M-bit (2MB) static RAMs organized as 1024K words by 16 bits. High-speed access times: speed = 20ns for VDD 1.65V to 2.2V speed = 10ns for VDD 2.4V to 3.6V speed = 8ns for VDD 3.3V + 5% # of addresses Maximum performance frequency: 125MHz

Schematic Diagram

SRAM Pin Assignments Signal Name FPGA Pin No. Description SRAM_ADDR[0]~ PIN_AB7~ SRAM Address[0]~ SRAM_DQ[0]~ PIN_AH3~ SRAM Data[0]~ SRAM_OE PIN_AD5 SRAM Output Enable SRAM_WE PIN_AE8 SRAM Write Enable SRAM_CE PIN_AF8 SRAM Chip Enable SRAM_LB PIN_AD4 SRAM Lower Byte Control SRAM_UB PIN_AC4 SRAM Upper Byte Control

SRAM Block Diagram

SRAM Pin Configuration 48-pin TSOP-1 (12mm x 20mm)

Truth Table

Read Cycle Min. read cycle time tRC = 8ns

Write Cycle Min. write cycle time tWC = 8ns

The End. Any question?

Reference "DE2-115 User Manual" by Terasic. "DE2-115_MB.pdf" by Terasic. "61WV102416ALL(ISSI_1M x 16_SRAM).pdf" by ISSI.