Add nitride Silicon Substrate.

Slides:

Advertisements

Similar presentations

MICROELECTROMECHANICAL SYSTEMS ( MEMS )

Advertisements

Gyroscopes based on micromechanical systems, MEMS gyroscopes are miniaturized variant of Coriolis vibratory gyros (CVG). Miniaturization is that a vibrating.

Pertemuan 5 Fabrikasi IC CMOS

ENGR-45_Lec-06_Diffusion_Fick-1.ppt 1 Bruce Mayer, PE Engineering-45: Materials of Engineering Bruce Mayer, PE Registered Electrical.

CHAPTER 8: THERMAL PROCESS (continued). Diffusion Process The process of materials move from high concentration regions to low concentration regions,

CMOS Fabrication EMT 251.

Simplified Example of a LOCOS Fabrication Process

MetalMUMPs Process Flow

CMOS Process at a Glance

Chapter 2 Modern CMOS technology

ECE/ChE 4752: Microelectronics Processing Laboratory

PolyMUMPs® Design Rules

Overview of Nanofabrication Techniques Experimental Methods Club Monday, July 7, 2014 Evan Miyazono.

Fabrication of p-n junction in Si Silicon wafer [1-0-0] Type: N Dopant: P Resistivity: Ω-cm Thickness: µm.

Design and Implementation of VLSI Systems (EN1600) lecture04 Sherief Reda Division of Engineering, Brown University Spring 2008 [sources: Sedra/Prentice.

Design and Implementation of VLSI Systems (EN0160) Sherief Reda Division of Engineering, Brown University Spring 2007 [sources: Sedra/Prentice Hall, Saint/McGrawHill,

SOIMUMPs Process Flow Keith Miller Foundry Process Engineer.

NIST Nanofabrication Facility. CNST Nanofab A state-of-the-art shared-use facility for the fabrication and measurement of nanostructures –19,000 sq ft.

Device Fabrication Example

Surface micromachining and Process flow part 1  Identify the basic steps of a generic surface micromachining process  Identify the critical requirements.

EE141 © Digital Integrated Circuits 2nd Manufacturing 1 Manufacturing Process I Dr. Shiyan Hu Office: EERC 518 Adapted and modified from Digital Integrated.

Digital Integrated Circuits © Prentice Hall 1995 Manufacturing Process CMOS Manufacturing Process.

Generated by IntelliSuite CleanRoom Electrothermal Actuator

INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #7. Etching  Introduction  Etching  Wet Etching  Dry Etching  Plasma Etching  Wet vs. Dry Etching  Physical.

MEMS Class 5 Micromachining Technologies Mohammad Kilani.

Manufacturing Process

McGill Nanotools Microfabrication Processes

CS/EE 6710 CMOS Processing. N-type Transistor + - i electrons Vds +Vgs S G D.

Surface MEMS 2014 Part 1

Click mouse or hit space bar to advance slides All slides property of Cronos, all rights reserved Silicon Substrate Add nitride.

SEMINAR ON MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS) A.RADHAKRISHNAN MECHANICAL ENGINEERING, CPT COLLEGE THIRUVANANTHAPURAM PART-1.

IC Process Integration

SEMINAR ON IC FABRICATION MD.ASLAM ADM NO:05-125,ETC/2008.

Semiconductor Manufacturing Technology Michael Quirk & Julian Serda © October 2001 by Prentice Hall Chapter 9 IC Fabrication Process Overview.

EE141 © Digital Integrated Circuits 2nd Manufacturing 1 Manufacturing Process Dr. Shiyan Hu Office: EERC 731 Adapted and modified from Digital Integrated.

Isotropic Anisotropic

Introduction to Prototyping Using PolyMUMPs

Presentation Outline February 25 th 20112Microfabrication Design Challenge 2011.

Top Down Manufacturing

Silicon detector processing and technology: Part II

NanoFab Trainer Nick Reeder June 28, 2012.

Surface Micromachining Dr. Marc Madou, Fall 2012, UCI Class 10.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 3, slide 1 Introduction to Electronic Circuit Design.

EE141 © Digital Integrated Circuits 2nd Manufacturing 1 Digital Integrated Circuits A Design Perspective Manufacturing Process Jan M. Rabaey Anantha Chandrakasan.

IC Fabrication/Process

Digital Integrated Circuits A Design Perspective

MEMS devices: How do we make them? Sandia MEMS Gear chain Hinge Gear within a gear A mechanism.

Dynamic Behavior of MOS Transistor. The Gate Capacitance t ox n + n + Cross section L Gate oxide x d x d L d Polysilicon gate Top view Gate-bulk overlap.

FULTEC / RPI GaN MESFET Process Flow

EE141 © Digital Integrated Circuits 2nd Manufacturing 1 Digital Integrated Circuits A Design Perspective Manufacturing Process Jan M. Rabaey Anantha Chandrakasan.

Fab - Step 1 Take SOI Wafer Top view Side view Si substrate SiO2 – 2 um Si confidential.

Side ViewTop View Beginning from a silicon wafer.

(Chapters 29 & 30; good to refresh 20 & 21, too)

CMOS Fabrication EMT 251.

Basic Planar Processes

7. Surface Micromachining Fall 2013 Prof. Marc Madou MSTB 120

CMOS Fabrication CMOS transistors are fabricated on silicon wafer

Manufacturing Process I

Layout and fabrication of CMOS circuits

CMOS Process Flow.

Chapter 1 & Chapter 3.

MEMS, Fabrication Cody Laudenbach.

VLSI System Design LEC3.1 CMOS FABRICATION REVIEW

Silicon Wafer cm (5’’- 8’’) mm

Lecture #25 OUTLINE Device isolation methods Electrical contacts to Si

Process flow part 2 Develop a basic-level process flow for creating a simple MEMS device State and explain the principles involved in attaining good mask.

Memscap - A publicly traded MEMS company

Manufacturing Process I

Manufacturing Process I

Add nitride Silicon Substrate

Presentation transcript:

Add nitride Silicon Substrate

Add Poly0 Silicon Substrate

1st level mask (Poly0) using Photolithography Patterning through 1st level mask (Poly0) using Photolithography Patterned Photoresist Photoresist Silicon Substrate

Removal of Unwanted Poly0 using Reactive Ion Etching Silicon Substrate Patterned Photoresist

1st Oxide Deposition using LPCVD Silicon Substrate

2nd level mask (Dimple) using Photolithography... Patterning through 2nd level mask (Dimple) using Photolithography... and Deep RIE Photoresist Silicon Substrate

3rd level mask (Anchor) using Photolithography Patterning through 3rd level mask (Anchor) using Photolithography and Deep RIE Photoresist Silicon Substrate

Blanket un-doped polysilicon deposition(Poly1) using LPCVD... followed by PSG deposition and annealing Silicon Substrate

using Photolithography... Patterning through 4th level mask (Poly1) using Photolithography... and Deep RIE Photoresist Silicon Substrate

Deposition of 2nd Oxide Layer Silicon Substrate

Patterning through 5th level mask using photolithography and deep RIE Silicon Substrate

Patterning through 6th level mask using photolithography and deep RIE Silicon Substrate

Deposition of undoped polysilicon, followed by PSG hardmask layer, then anneal Silicon Substrate

Patterning through 7th level mask using photolithography and deep RIE Silicon Substrate

Patterning through 8th level mask using photolithography and liftoff, followed by removal of unwanted resist and metal in solvent bath Silicon Substrate

Release of structures using HF Silicon Substrate