Near-unity photoluminescence quantum yield in MoS2

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Near-unity photoluminescence quantum yield in MoS2 by Matin Amani, Der-Hsien Lien, Daisuke Kiriya, Jun Xiao, Angelica Azcatl, Jiyoung Noh, Surabhi R. Madhvapathy, Rafik Addou, Santosh KC, Madan Dubey, Kyeongjae Cho, Robert M. Wallace, Si-Chen Lee, Jr-Hau He, Joel W. Ager, Xiang Zhang, Eli Yablonovitch, and Ali Javey Science Volume 350(6264):1065-1068 November 27, 2015 Published by AAAS

Fig. 1 Enhancement of PL by chemical treatment. Enhancement of PL by chemical treatment. (A) PL spectrum for both the as-exfoliated and TFSI-treated MoS2 monolayers measured at an incident power of 1 × 10−2 W cm−2. The inset shows normalized spectra. (B and C) PL images of a MoS2 monolayer before (B) and after treatment (C). Insets show optical micrographs. Matin Amani et al. Science 2015;350:1065-1068 Published by AAAS

Fig. 2 Steady-state luminescence. Steady-state luminescence. (A) Pump-power dependence of the integrated PL for as-exfoliated and treated MoS2. Dashed lines show power law fits for the three dominant recombination regimes. (B) Pump-power dependence of the QY for as-exfoliated and treated MoS2. Dashed lines show the recombination model. Matin Amani et al. Science 2015;350:1065-1068 Published by AAAS

Fig. 3 Time-resolved luminescence. Time-resolved luminescence. (A) Radiative decay of an as-exfoliated MoS2 sample at various initial carrier concentrations (n0), as well as the instrument response function (IRF). (B) Radiative decay of a treated MoS2 sample plotted for several initial carrier concentrations (n0), as well as the IRF. Dashed lines in (A) and (B) indicate single exponential fits. (C) Effective PL lifetime as a function of pump fluence. Dashed lines show a power law fit for the dominant recombination regimes. Matin Amani et al. Science 2015;350:1065-1068 Published by AAAS

Fig. 4 Material and device characterization. Material and device characterization. (A) AFM images taken before and after TFSI treatment. (B) Transfer characteristics of a monolayer MoS2 transistor, both before and after treatment. VDS, drain-source voltage; S, source; D, drain; G, gate. (C) Raman spectrum of as-exfoliated and TFSI-treated MoS2 samples. a.u., arbitrary units; E′, MoS2 in-plane mode; A′, MoS2 out-of-plane mode; Si, silicon Raman peak. (D) Absorption spectrum of the as-exfoliated and treated MoS2 samples. A and B indicate the exciton resonances. (E) XPS spectrum of the S 2p and Mo 3d core levels before and after treatment. The insets show that there is no appearance of SOx or change in the MoOx peak intensity after treatment. Matin Amani et al. Science 2015;350:1065-1068 Published by AAAS