Mason Freed, Costas Spanos, Kameshwar Poolla

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Presentation transcript:

Mason Freed, Costas Spanos, Kameshwar Poolla Spatially Resolved Heat Flux Sensor on a Silicon Wafer for Plasma Etch Processes SFR Workshop May 24, 2001 Mason Freed, Costas Spanos, Kameshwar Poolla Berkeley, CA 2001 GOAL: Design, build, and test an array of heat flux sensors on a silicon wafer, with external electronics. 5/24/2001

Motivation Plasma etch processes are highly sensitive to wafer temperature, in terms of etch rate, selectivity, and anisotropy Heat delivered to the wafer has two principle sources: ion flux bombardment, and exothermic chemical etch reactions It is very difficult to measure these two quantities, spatially resolved, without using wafer-mounted sensors Plasma Chemical heating Ion flux heating Chuck cooling Wafer Chuck 5/24/2001

Sensor Geometry: Modified Gardon Gauge Membrane Top View T  sensitivity depends on diameter squared D Incident heat flux Antenna Base Membrane T Heat flow within thin dielectric membrane Membrane thickness=w Membrane Side View Heat flow within membrane Incident heat flux (q ) T Heat sink b 5/24/2001

Discrimination of Ionic / Chemical Heating Use two heat flux sensors, one with an exposed layer of etched material (“exposed” in diagram) and the other without this material (“covered”) Place sensors into Wheatstone bridge arrangement:   antenna structure keeps this added material from adversely affecting the sensitivity Router,exposed Router,covered Rinner,covered2 Vchemical Vionflux + – + – Rinner,exposed Rinner,covered Router,covered2 5/24/2001

First Process – High Built-In Stress Gradient Warped Antenna Etch Holes Membrane 5/24/2001

First Process – Printability Problems Open Circuit “Gunk” Polysilicon central resistor Metal Wires 5/24/2001

Second Process Moved to polysilicon antenna structure, from previous aluminum/oxide/photoresist stack Enlarged wires to allow better printability Switched to wet Aluminum etchant, to avoid aluminum/polysilicon selectivity problem with Cl-based plasma etch Modified layout to place etch holes closer together, and more evenly spaced Modified layout to allow better matching between the inner and outer temperature-sense resistors 5/24/2001

Problems Solved 5/24/2001

2002 and 2003 Goals Demonstrate heat flux sensor in plasma etch environment, with external electronics, by 9/30/2002. Design wireless heat flux sensor wafer and demonstrate it in plasma etch environment, by 9/30/2003. 5/24/2001