Digital Integrated Circuits 11: MOS Transistor Design and Modeling

Slides:

Advertisements

Similar presentations

Lecture Metal-Oxide-Semiconductor (MOS) Field-Effect Transistors (FET) MOSFET Introduction 1.

Advertisements

Goals Investigate circuits that bias transistors into different operating regions. Two Supplies Biasing Four Resistor Biasing Two Resistor Biasing Biasing.

ECA1212 Introduction to Electrical & Electronics Engineering Chapter 6: Field Effect Transistor by Muhazam Mustapha, October 2011.

Physical structure of a n-channel device:

MODULE SYSTEM LOGIC GATE CIRCUIT DQ CMOS Inverter ASIC Full-Custom Semi-Custom Programmable FPGA PLD Cell-Based Gate Arrays General Purpose DRAM & SRAM.

Metal-Oxide-Semiconductor Fields Effect Transistors (MOSFETs) From Prof. J. Hopwood.

Digital Integrated Circuits© Prentice Hall 1995 Devices Jan M. Rabaey The Devices.

Rowan Hall 238A April 24, 2007 Electronics I for M.E. ECE Load Line Exercises James K. Beard, Ph.D.

EE466: VLSI Design Lecture 02 Non Ideal Effects in MOSFETs.

8/29/06 and 8/31/06 ELEC / Lecture 3 1 ELEC / (Fall 2006) Low-Power Design of Electronic Circuits (ELEC 5970/6970) Low Voltage.

© Digital Integrated Circuits 2nd Devices Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic.

EE415 VLSI Design The Devices: MOS Transistor [Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.]

CSCE 612: VLSI System Design Instructor: Jason D. Bakos.

ECD 442 Power Electronics1 Power MOSFETs Two Types –Depletion Type Channel region is already diffused between the Drain and Source Deplete, or “pinch-off”

Digital Integrated Circuits A Design Perspective

Chap. 5 Field-effect transistors (FET) Importance for LSI/VLSI –Low fabrication cost –Small size –Low power consumption Applications –Microprocessors –Memories.

Spring 2007EE130 Lecture 38, Slide 1 Lecture #38 OUTLINE The MOSFET: Bulk-charge theory Body effect parameter Channel length modulation parameter PMOSFET.

© Digital Integrated Circuits 2nd Devices VLSI Devices  Intuitive understanding of device operation  Fundamental analytic models  Manual Models  Spice.

Modern VLSI Design 3e: Chapter 2 Copyright  1998, 2002 Prentice Hall PTR Topics n Derivation of transistor characteristics.

High Frequency MOSFET Model. Models for Computer Simulation Simple dc Model Small Signal Model Frequency-Dependent Small Signal Model Better Analytical.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 7, slide 1 Introduction to Electronic Circuit Design.

EE213 VLSI Design S Daniels Channel Current = Rate of Flow of Charge I ds = Q/τ sd Derive transit time τ sd τ sd = channel length (L) / carrier velocity.

© Digital Integrated Circuits 2nd Devices Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic.

The Devices Digital Integrated Circuit Design Andrea Bonfanti DEIB

© Digital Integrated Circuits 2nd Devices Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic.

Jan M. Rabaey The Devices Digital Integrated Circuits© Prentice Hall 1995 Introduction.

Modern VLSI Design 4e: Chapter 2 Copyright  2009 Prentice Hall PTR Topics n Derivation of transistor characteristics.

Introduction to FinFet

Modern VLSI Design 3e: Chapter 2 Copyright  1998, 2002 Prentice Hall PTR Topics n Derivation of transistor characteristics.

ECE 340 ELECTRONICS I MOS APPLICATIONS AND BIASING.

CSCE 613: Fundamentals of VLSI Chip Design Instructor: Jason D. Bakos.

ECE340 ELECTRONICS I MOSFET TRANSISTORS AND AMPLIFIERS.

Junction Capacitances The n + regions forms a number of planar pn-junctions with the surrounding p-type substrate numbered 1-5 on the diagram. Planar junctions.

EE141 © Digital Integrated Circuits 2nd Devices 1 Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje.

1 Chapter 5. Metal Oxide Silicon Field-Effect Transistors (MOSFETs)

Digital Integrated Circuits© Prentice Hall 1995 Devices Jan M. Rabaey The Devices.

EE141 © Digital Integrated Circuits 2nd Devices 1 Goal of this lecture  Present understanding of device operation  nMOS/pMOS as switches  How to design.

Penn ESE370 Fall DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 10: September 19, 2014 MOS Transistor.

MOSFET Current Voltage Characteristics Consider the cross-sectional view of an n-channel MOSFET operating in linear mode (picture below) We assume the.

EE141 © Digital Integrated Circuits 2nd Devices 1 Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje.

Recall Lecture 17 MOSFET DC Analysis 1.Using GS (SG) Loop to calculate V GS Remember that there is NO gate current! 2.Assume in saturation Calculate I.

Penn ESE370 Fall DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 10: September 20, 2013 MOS Transistor.

Analog Integrated Circuits Lecture 1: Introduction and MOS Physics ELC 601 – Fall 2013 Dr. Ahmed Nader Dr. Mohamed M. Aboudina

EE314 IBM/Motorola Power PC620 IBM Power PC 601 Motorola MC68020 Field Effect Transistors.

UNIT II : BASIC ELECTRICAL PROPERTIES

Power MOSFET Pranjal Barman.

MOS Capacitance Unit IV : GATE LEVEL DESIGN VLSI DESIGN 17/02/2009

BJT transistors.

Chapter 3 Fabrication, Layout, and Simulation.

The MOS Transistor Figures from material provided with Digital Integrated Circuits, A Design Perspective, by Jan Rabaey, Prentice Hall, 1996.

Chapter 2 MOS Transistors.

Field-Effect Transistors Based on Chapter 11 of the textbook

6.3.3 Short Channel Effects When the channel length is small (less than 1m), high field effect must be considered. For Si, a better approximation of field-dependent.

MOSFET CAPACITANCES Very Large Scale Integration 1 - VLSI 1

EE141 Chapter 3 VLSI Design The Devices March 28, 2003.

MOS Field-Effect Transistors (MOSFETs)

Lecture 21 REMINDERS OUTLINE Frequency Response Reading: Chapter 11

Digital Integrated Circuits 10: Short-Channel MOSFETs

Reading: Finish Chapter 17,

VLSI Design CMOS Transistor Theory

MOSFETs - An Introduction

Digital Integrated Circuits CMOS I: Static Characteristics

Last Lecture – MOS Transistor Review (Chap. #3)

Semiconductor devices and physics

Channel Length Modulation

Lecture 20 OUTLINE The MOSFET (cont’d)

Lecture 20 OUTLINE The MOSFET (cont’d)

5/29/2019 Course Objectives This course teaches analog integrated design using CMOS Technology Analog Circuit Design.

Hangzhou Dianzi University

Chapter 4 Field-Effect Transistors

Presentation transcript:

Digital Integrated Circuits 11: MOS Transistor Design and Modeling Revision 2009 03 05

n-MOS Transistor Design

p-MOS Transistor Design

Series MOSFETs

Parallel MOSFETs

MOSFET Oxide Capacitances mode Cgs Cgb Cgd cutoff saturation linear linear (b) saturation cutoff

MOSFET Junction Capacitances

MOSFET Level 1 Model Drain current equations saturation linear

MOSFET Level 1 Model Capacitances

MOSFET BSIM1 Model Threshold Voltage

MOSFET BSIM1 Model Drain Current – Linear Region

MOSFET BSIM1 Model Drain Current – Saturation Region

MOSFET BSIM1 Model Drain Current – Subthreshold Region